HIGH CURRENT NPN SILICON TRANSISTOR Search Results

K83 Package

Abstract: MPQ1050 transistor k84 MHQ2221 MPQ2221 MPQ2222 MPQ105
Contextual Info: MPQ1050 SILICON QUAD DUAL-IN-LINE NPN SILICON QUAD DUAL-IN-LINE NPN SILICON HIGH-CURRENT SWITCHING TRANSISTOR HIGH-CURRENT SWITCHING TRANSISTOR . . . designed for high-current, high-speed switching applications. • Low Colflector-Emitter Saturation Voltage —

k03d3

Abstract: 2N3303 MPQ3303 SFT01 4PD4
Contextual Info: MPQ3303 silicon QUAD DUAL-IN-LINE NPN SILICON ANNULAR LOW-VOLTAGE HIGH-CURRENT TRANSISTORS QUAD DUAL-IN-LINE NPN SILICON LOW VOLTAGE HIGH CURRENT SWITCHING TRANSISTORS . , . designed fo r high-current, high-speed switching, and MOS trans­ lator applications.

BCP68T1

Abstract: BCP68T3 BCP69T1 SMD310
Contextual Info: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the

bcp68t1

Abstract: BCP68T3 BCP69T1 SMD310
Contextual Info: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the

Contextual Info: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the

transistor 892

Abstract: 2N5038 OC-90
Contextual Info: 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching

BUV22G

Abstract: BUV22
Contextual Info: BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • High DC Current Gain:

BUV21

Abstract: BUV21G
Contextual Info: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:

BUX12

Abstract: TRANSISTOR 023 3010 P003N transistor bux12
Contextual Info: BUX12 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS MOTOR CONTROL ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 1 2 DESCRIPTION The BUX12 is a silicon multiepitaxial planar NPN

CYT5551HCD

Abstract: sot 228 marking
Contextual Info: CYT5551HCD Central TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED NPN HIGH CURRENT SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551HCD type consists of two 2 isolated NPN high current silicon transistors packaged in an epoxy molded

Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A

BUV21

Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A

BUV22 equivalent

Abstract: BUV22
Contextual Info: ON Semiconductort BUV22 SWITCHMODEt Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: • • HFE min. = 20 at IC = 10 A

buv22

Contextual Info: ON Semiconductort BUV22 SWITCHMODEt Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: • • HFE min. = 20 at IC = 10 A

mje3055

Abstract: mje3055 data MJE3055K 2 N MJE3055 transistor MJE3055 MJE3055 TO-126 CASE 90-05 MJE2955K "case 90-05" 1511 BA
Contextual Info: MJE3055 SILICON MJE3055K 10 AMPERE POWER TRANSISTORS HIGH POWER NPN SILICON TRANSISTORS . . . designed for use m general-purpose amplifier and switching applitions. NPN SILICON 6 0 VOLTS 90 WATTS • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product —

Contextual Info: SGS-THOMSON Mœ ËILËOTfô®KI 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching

Silicon NPN Epitaxial Planar Type

Abstract: CMPT5551HC npn 120v 10a transistor
Contextual Info: Central CMPT5551HC SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

CZT5551HC

Contextual Info: Central CZT5551HC TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

MARKING npn TRANSISTOR 1k sot223

Abstract: 417 TRANSISTOR transistor 417 C 38 marking code transistor CZT853 CZT953
Contextual Info: Central CZT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

baw 92

Abstract: MPS2369 PP116
Contextual Info: MPS2369 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR . . . designed for use ¡n high-speed, low-current switching applications. • Low O utp ut Capacity • Fast Switching Time @ lc = 10 mAdc t on =! 12 #is (Max) • High Current*Gain—Bandwidth Product

Silicon NPN Epitaxial Planar Type

Abstract: sot-89 marking code CXT5551HC 120v 10a transistor high voltage npn transistor SOT-89 npn 120v 10a transistor
Contextual Info: CXT5551HC SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

NPN Transistor 1A metal switching

Abstract: 2N5886
Contextual Info: 2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN

BUV60

Abstract: BUV20
Contextual Info: ON Semiconductort BUV20 BUV60 SWITCHMODEt Series NPN Silicon Power Transistor . . . designed for high speed, high current, high power applications. 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS • High DC current gain: • • hFE min = 20 at IC = 25 A

PNP TRANSISTOR "SOT89" marking pr

Abstract: CXT853 sot-89 marking code CXT953 sot-89 marking 22 sot-89 marking code pr TRANSISTOR marking ar code
Contextual Info: RY A IN IM EL PR Central CXT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT853 type is a high current, high voltage silicon NPN transistor. Packaged in the SOT-89 surface mount case, the