HIGH 929 Search Results

929 phototube

Abstract: GL-929 HIGH 929 K-8639625 ETI-191
Contextual Info: PHOTOTUBE DESCRIPTIO N The GL-929 is a high-vacuum, two-electrode phototube which has extraordinarily high sensitivity to light sources predominating in blue radia- tion. Because of its excellent stability, and high sensitivity, the GL-929 is particularly suited

VA708

Abstract: LP 8029 EZ 929 8029 hl
Contextual Info: V 1~ C INC 93SÔ 929 V T C _ D1 ci 3 a a ciBcl OOQliSSQ 3 IN C 99D 01250 T -1 9 - 23 VA708 HIGH-SPEED, FAST-SETTLING, HIGH OUTPUT CURRENT OPERATIONAL AMPLIFIER, A CL2> 3 LSP FAMILY DATA SHEETS a cm FEATURES • Fast Settling Time; ±0.1% in 150ns • High Slew Rate: 90V4is

23marking

Abstract: sot-23 Marking s31
Contextual Info: Te m ic S 929 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure High transition frequency Dimensions in mm technical drawings according to DIN specifications

2SK1929

Contextual Info: TOSHIBA 2SK1929 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SII.5 2 S K 1 929 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in m m T0-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 10.3MAX.

transistor s parameters noise

Abstract: NPN planar RF transistor 929 marking 23marking
Contextual Info: S 929 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Case 23 A 3 DIN 41869 SOT 23 Marking: P1 Absolute Maximum Ratings

FLL57MK

Abstract: fll57 fujitsu gaas fet L-band fujitsu gaas fet
Contextual Info: FLL57MK _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 36.0dBm Typ. High Gain: = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION

HSB83

Contextual Info: HSB83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0187-0200Z Previous: ADE-208-489A Rev.2.00 Mar.22.2004 Features • High reverse voltage. (VR = 250 V) • CMPAK package is suitable for high density surface mounting and high speed assembly.

HSM83

Contextual Info: HSM83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0172-0500Z Previous: ADE-208-091D Rev.5.00 Jan.13.2004 Features • High reverse voltage. (VR = 250V) • MPAK package is suitable for high density surface mounting and high speed assembly.

HSK122

Abstract: HSK83
Contextual Info: HSK83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0191-0400Z Previous: ADE-208-169C Rev.4.00 Mar.22.2004 Features • High reverse voltage. (VR = 250 V) • LLD package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0189-0200Z Previous: ADE-208-307A Rev.2.00 Mar.22.2004 Features • High reverse voltage. (VR = 250 V) • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.

Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to

fll57

Abstract: FLL57MK
Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to

0.1 j100

Abstract: FLL57MK fll57
Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to

FLL57MK

Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to

FLL57MK

Abstract: fll57 01 j100
Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to

MIC911

Abstract: 12F-10 MIC910 MIC912 MIC913 MIC914
Contextual Info: HIGH SPEED OP AMPS 100MHz – 350MHz Low Power Op Amps Micrel’s MIC91x op amps set a new standard for low power consumption at high speed. And unlike most other high speed op amps, the MIC91x family can drive high capacitance loads—in fact, they can drive any capacitance!

44P0K

Abstract: R1RW0416D R1RW0416DGE-2LR R1RW0416DGE-2PR R1RW0416DSB-2LR R1RW0416DSB-2PR
Contextual Info: R1RW0416D Series 4M High Speed SRAM 256-kword x 16-bit REJ03C0107-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

R1RW0408D

Abstract: R1RW0408DGE-2LR R1RW0408DGE-2PR
Contextual Info: R1RW0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0111-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

DAM11W1P

Abstract: DAM11W1S DM53742-1 DCM21WA4P DM53740-15 DDM24W7P DM53741-5001 dm53742-5001 DM51157-8 DM53740-5000
Contextual Info: D-Subminiature High Reliability Metal Shell .109" 2.77mm Density Coaxial/High Voltage High Power/Solder Cup Combination Layout_ Features Mechanical Characteristics • Available in a variety of contact styles and sizes Individual Contact Insertion and

32P0K

Abstract: R1RW0404D R1RW0404DGE-2LR R1RW0404DGE-2PR REJ03C0115-0100Z r1rw0404dge
Contextual Info: R1RW0404D Series 4M High Speed SRAM 1-Mword x 4-bit REJ03C0115-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

R1RP0408DGE-2PR

Abstract: R1RP0408D R1RP0408DGE-2LR
Contextual Info: R1RP0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0112-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

32P0K

Abstract: R1RP0404D R1RP0404DGE-2LR R1RP0404DGE-2PR
Contextual Info: R1RP0404D Series 4M High Speed SRAM 1-Mword x 4-bit REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

R1RP0416DSB-2LR

Abstract: R1RP0416DGE-2LR 44P0K R1RP0416D R1RP0416DGE-2PR R1RP0416DSB-2PR
Contextual Info: R1RP0416D Series 4M High Speed SRAM 256-kword x 16-bit REJ03C0108-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

Contextual Info: Agilent Technologies U7248A High Speed Inter-Chip HSIC Compliance Test Software Infiniium Oscilloscopes Data Sheet Agilent Technologies U7248A High Speed Inter-Chip (HSIC) Compliance Test Software Infiniium Oscilloscopes USB 2.0 High Speed Inter-Chip Compliance Test Software