HFA3101 Search Results

kf 8715

Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
Contextual Info: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI

HFA3101

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
Contextual Info: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

HFA3101

Contextual Info: jr / U S Semiconductor I 900MHz Down Converter Consumes Little Power HFA3101 A p p lic a t io n N o te Most 900M H z down converter designs are proprietary and, thus, are unavailable to the industry. The designs that are available are usually discrete or require high voltage, which

3101-B

Abstract: h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12
Contextual Info: CSF! H A R R I S W HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array November 1996 Features • Description High Gain Bandwidth Product fT .10GHz • High Power Gain Bandwidth P ro d u c t. 5GHz •

Contextual Info: HFA3101B Transistors Special-Purpose Transistor No. of Units Per Package1 V BR CEO (V)8.0 V(BR)CBO (V)12 I(C) Max. (A)30m Absolute Max. Power Diss. (W).4 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.70Â @I(C) (A) (Test Condition)10m

Harris HFA3101 5 GHz Gilbert cell array

Abstract: Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B HFA3101 reactance modulator HFA3101B96
Contextual Info: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array August 1996 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI

HFA3101

Contextual Info: HFA3101 Semiconductor S e p te m b e r 1998 F ile N u m b e r 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI process, this array achieves very high fy 10GHz while

HFA3101

Abstract: gilbert cell sum variable frequency down converter gilbert cell intersil
Contextual Info: 900MHz Down Converter Consumes Little Power HFA3101 Application Note LCH 390nH 5 6 7 RB2 51 3V RC 2K IF OUTPUT CC 2pF TO 12pF 75MHz Q1 Q2 Q5 0.01µF 0.01µF R2 330 R3 220 Q3 Q4 HFA3101 RF INPUT (900MHz) Q6 4 R1 110 3 0.01µF 2 R1, R2, and R3 form a voltage bias network to bias the

HFA3101

Contextual Info: 900MHz Down Converter Consumes Little Power HFA3101 Application Note All the components should be leadless, with self-resonant frequencies exceeding 1GHz. The output matching circuit comprising LC, CC, and RC maximizes the gain. The selection of these components maximizes gain while allowing a

815 transistor

Abstract: HFA3101 3101-B noise cancellation IC 3101b
Contextual Info: 80 HARRIS HFA3101 SEMICONDUCTOR Gilbert Cell UHF Transistor Array November 1996 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded water UHF-1 SOI

kf 8715

Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96
Contextual Info: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

Contextual Info: HFA3101 Semiconductor September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features T he HFA3101 is an all NPN tra n sisto r array con fig u re d as a • High G ain B andw idth P rod uct f j .10G Hz M u ltiplier Cell. Based on H arris bo nded w a fe r UHF-1 SO I

HFA3101

Contextual Info: 900MHz Down Converter Consumes Little Power HFA3101 Application Note November 1996 AN9528.1 With the component values and frequencies in Figure 1, the circuit down converts 900MHz to 75MHz by using an 825MHz local oscillator signal, and it does so with 50Ω

mancini

Abstract: gilbert cell sum HFA3101 "Differential Amplifier" variable frequency down converter gilbert gilbert cell differential pair down converter AN9528
Contextual Info: Harris Semiconductor No. AN9528.1 Harris Linear November 1996 900MHz Down Converter Consumes Little Power HFA3101 Authors: Ronald Mancini and Raphael Matarazzo 5 6 7 RB2 51 3V RC 2K IF OUTPUT CC 2pF TO 12pF 75MHz Q1 Q2 Q5 0.01µF R2 330 Q3 Q4 HFA3101 RF

H3101B

Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration
Contextual Info: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

transistor npn c 9012

Abstract: HFA3101BZ 5GHz band pass filter
Contextual Info: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

transistor ITT 2907

Abstract: transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a
Contextual Info: Ü Î H U S E M I C O N D U C T O R U A R R HFA3101 I S Gilbert Cell UHF Transistor Array Ju ly 1995 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all N PN transistor array configured as a • High Pow er Gain Bandwidth P r o d u c t .5GHz

Contextual Info: HFA3101Y Transistors Special-Purpose Transistor No. of Units Per Package1 V BR CEO (V)8.0 V(BR)CBO (V)12 I(C) Max. (A)30m Absolute Max. Power Diss. (W).4 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.70Â @I(C) (A) (Test Condition)10m

HI5702

Abstract: HI5703 HI5746 HI5746EVAL1 HI5746KCA HI5746KCB HI5767
Contextual Info: HI5746 TM Data Sheet February 1999 File Number 4129.4 10-Bit, 40 MSPS A/D Converter Features The HI5746 is a monolithic, 10-bit, analog-to-digital converter fabricated in a CMOS process. It is designed for high speed applications where wide bandwidth and low

HA5020

Abstract: HI5710A HI5710AJCQ Tuner ts pinout
Contextual Info: HI5710A August 2000 Features CT UCT OD U E P R OD t R P ra TE UT OLE UBSTIT rt Cente tsc S B O uppo .com/ LE S SSIB hnical S .intersil O P w A ec FOR act our T IL or ww S t n ER co 8-INT 1-88 10-Bit, 20 MSPS A/D Converter Description • Resolution ±0.5 LSB DNL . . . . . . . . . . . . . . . . . . 10-Bit

9744

Abstract: 974-4 AN9744 gilbert cell 5.1 transistor amplifier circuit diagram HFA3127 PNP Transistor Arrays Intersil gilbert cell differential pair HFA3046 HFA3102
Contextual Info: RF Up/Down Conversion Is Simplified By Linear Arrays TM Application Note July 1997 Linear Arrays Have Advantages Over Discrete Transistors Q5 C1 1nF 5V - L1 1µH VO Q2 C3 1nF RL 50Ω RE 5.1Ω - + VS + FIGURE 2. MULTISTAGE TRANSISTOR AMPLIFIER The advantages of linear arrays over discrete transistors are

Contextual Info: HI5710A HARRIS S E M I C O N D U C T O R 10-Bit, 20 MSPS A/D Converter August 1997 Features Description • R e so lu tio n ±0.5 LSB D N L . 1 0-B it The HI5710A is a low power, 10-bit, CMOS analog-to-digital converter. The use of a 2-step architecture realizes low

Contextual Info: f i H A R R HI5702 IS SEMICONDUCTOR 10-Bit, 40 M SPS A /D C onverter October 1994 Features Description • 40 MSPS Sampling Rate The HI5702 is a monolithic, 10-bit, analog-to-digital converter fabricated in Harris’s HBC10 BiCMOS process. It is designed for high speed applications where wide

transistor D 5703

Contextual Info: ¡-115702 HARRIS Ê S E M I C O N D U C T O R MM Ê 10-Bit, 40 MSPS A/D Converter August 1997 Features Description • Sampling R a te . 40 MSPS The HI5702 is a monolithic, 10-bit, analog-to-digital converter fabricated in a BiCMOS process. It is designed for