1340NM Search Results

SLT4100-XN

Abstract: slt4100-xs SLT4101-DS HUW9623173-01I slt4100-qn
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT4100 Series HUW9623173-01I May 9, 2008 Technical Specification of 1.3µm MQW-FP Laser Diode Module SLT4100 Series RoHS Compliant Page 1 of 9 Sumitomo Electric Industries, Ltd. Part No.:

EN50081-1

Contextual Info: MADE FOR THE TRADE! FIBER OPTIC professional XL fiberTOOLS™ Series instruments XL fiberTOOLS™ Series Instruments Designed for Fiber Optic Cable Testing. The XL fiberTOOLS™ are designed for the professional to perform installation and maintenance measurements

smd transistor 304

Abstract: cdfp4-f16
Contextual Info: HS-6254RH Semiconductor Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,

ME7022

Abstract: ME7032 ME7522
Contextual Info: M ITSU B ISH I InG aA sP LIG H T EM ITTIN G DIODES M E7X X2 MITSUBISHI D I S C R E T E 3 iE D SC n SERIES 0014223 s b m i t s F O R O P T I C A L C O M M U N IC A T IO N I TY P E NAME DESCRIPTION FEA T U R E S M itsubishi M E7XX2 se ries are InG aA sP/lnP double heterostruoture light emitting d iod es esp e cia lly d esig ned as light

Contextual Info: HFA3101 Semiconductor September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features T he HFA3101 is an all NPN tra n sisto r array con fig u re d as a • High G ain B andw idth P rod uct f j .10G Hz M u ltiplier Cell. Based on H arris bo nded w a fe r UHF-1 SO I

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT2710-x Series HUW0124068-01B February 25, 2002 Technical Specification of 1.31µm MQW-FP Laser Diode Module: Receptacle Module SLT2710-x Series Page 1 of 7 Sumitomo Electric Industries, Ltd.

Contextual Info: > • b 2 4 ci f l 2 cî O ü l M b ^ | 1 IT S Abb HIGH r a d ia n c e l ig h t e m it t in g d io d e s ME7XX2 SERIES MITSUBISHI (DISCRETE SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES ME7XX2 are In G a A sP /ln P double heterostructure • High c u t - o f f frequency, typically 150MHz

Contextual Info: 944/954 Series Amphenol 944 FC and 954 SC Terminators Intermateability The Amphenol FC and SC terminators are mechanically intermateable with NTT type FC and SC products and conform to JIS C 5970 and JIS 5973 respectively. Features Specifications Back Reflection: -45 dB maximum

Fiberxon

Abstract: k15e 1350nm 850C GR-1089-CORE GR-468 1343nm
Contextual Info: Aug 27, 2007 1.25Gbps Single Fiber Bi-directional SFF 2*10 Transceiver For 15km point-to-point transmission Members of FlexonTM Family ‹ Compatible with SFF MSA ‹ Refer to IEEE 802.3ah -2004 ‹ Compatible with Bellcore GR-468 ‹ Compatible with FDA 21 CFR 1040.10 and

irf 1340

Abstract: e7032
Contextual Info: HIGH RADIANCE LIGHT EMITTING DIODES ME7XX2 SERIES FOR OPTICAL COMMUNICATION TYPE NAME FEATURES DESCRIPTION ME7XX2 are In G a A s P /ln P double heterostructure • High c u t - o f f frequency, typically 150MHz Ig h t • High coupling power, typically - 17dBm

cdfp4-f16

Abstract: smd transistor 304
Contextual Info: HS-6254RH HARRIS S E M I C O N D U C T O R Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,

HFA3102

Contextual Info: HFA3102 ÎH HARRIS S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Description Features H igh G a in -B a n d w id th P ro d u c t fT . . . . . 1 0G H z • H igh P o w er G a in -B a n d w id th P ro d u ct . . . 5GHz • H igh C u rre n t G a in (h FE) .

HFA3046

Abstract: HAF3096 HFA3128 UHF power TRANSISTOR PNP
Contextual Info: ¡ ü H a Ü tr s e mi c ondu c t or HFA3046, HFA3096 HFA3127, HFA3128 r r i s Aprii 1993 Ultra High Frequency Transistor Array Features Description • NPN Transistor fT . 8GHz T he HFA3046, HFA3096, H FA3127 and the H FA3128 are

Contextual Info: M ITSUBISHI InGaAsP LIGHT EM ITTIN G DIODES M E7XX2 MI T S U B I S H I D I S C R E T E SC H 31E D SERIES ^24^02=1 0 G 1 4 2 2 3 S B M I T S F O R O P T I C A L C O M M U N IC A T IO N TYPE NAME DESCRIPTION FEATUR ES Mitsubishi M E7XX2 series are InGaAsP/lnP double heterostructure light emitting diodes e specially designed as light

4733 PNP

Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 Semiconductor Datasheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1

LA 7376

Abstract: 729E HFA3046 16 PIN ic 810 PNP monolithic Transistor Arrays complementary npn-pnp power transistors hfa3128 TRANSISTOR 7812 1320j ba 9319
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 S em iconductor October 1998 Data Sheet File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1