HF50 Search Results

Contextual Info: Ferrite Bead Assortment Kit M Features: • 3 Storage Systems • Excellent For Labs • Design In & Prototype • Replaceable When Empty • Optional Drawer Set ifem 12 Values Impedance Current Eqivalent To @ 100 MHz Rating im 600mA HF50ACB201209-T Size 0805

HF50A060

Contextual Info: Preliminary Data Sheet PD-20599A rev. C 2/5/04 HF50A060ACE Hexfred Die in Wafer Form 600 V Size 50 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

hf50c120

Contextual Info: International IO R Rectifier PD'2-496 H F 50C 120A C B TARGET HF50C120ACB Hexfred Die in Wafer Form 1200 V Size 50 4" Wafer Electrical Characteristics Wafer Form D e s c rip tio n P a ra m e te r G u a ra n te e d (M in /M a x ) T e s t C o n d itio n s

ACC635050

Abstract: ACC201209 ACC321611 ACC322513 ACC453215 ACC575018 ACC575032 HF50 HF70
Contextual Info: Sheet1 Product Identification HF70 ACC 201209 - T 1 (2) (3) (4) (1) Material name Material Name µi Temperature coefficient αµi (x 10-6/ºC) Bms (mT) at H [A/m] Tc (ºC) min. δ (Ω-m) HF70 1500 HF50 250 HF30 45 1 to 3 280 [1600] 100 105 9 to 15 290 [1600]

HF50D060ACE

Contextual Info: PD - 94380 HF50D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance

Contextual Info: HF50-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI HF50-12S is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely

ASI10596

Abstract: HF50-12F
Contextual Info: HF50-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF50-12F is Designed for FEATURES: B .112 x 45° A E • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 30 W PEP • Omnigold Metalization System C Ø.125 NOM.

HF50D060ACE

Contextual Info: PD - 94380 HF50D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance

HF50-12F

Abstract: ASI10596
Contextual Info: HF50-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF50-12F is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely

GA75TS60U

Abstract: HF50A060ACB
Contextual Info: PD - 2.599 Preliminary HF50A060ACB HF50A060ACB Hexfred Die in Wafer Form 600 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max)

HF50D120ACE

Abstract: IRGC50B120KB
Contextual Info: PD - 93877 HF50D120ACE Hexfred Die in Wafer Form Features 1200V IF nom =50A VF(typ)= 1.78V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • •

HF50D120ACE

Abstract: IRGC50B120KB
Contextual Info: PD - 93877 HF50D120ACE Hexfred Die in Wafer Form Features 1200V IF nom =50A VF(typ)= 1.78V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • •

IC MAX 797

Abstract: 2SD608 2SB628 S3V77 251C
Contextual Info: 2SD608/2SB628 2SD 608/2SB 628 N PN /PN P x >J n V h ÿ V ' / X ? / N P N / P N P SILICON EPIT A X IA L TRANSISTOR y ^ " ffl/A u d io Frequency Power / i & i Ê M Z 'i "j 8 S/FEA TU RES • *Hf50/PACKAGE DIMENSIONS Unit:mm 100~150 Wffl-’'" V —T V 7‘CO K iM 'v lg i: L T S ig o

B1198

Contextual Info: Preliminary D a ta sh e e t PD-20598 rev. B 11/98 International IQR Rectifier HF50C120ACE Hexfred Die in W afer Form 1200 V Size 50 5" W afer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) Test Conditions Forw ard Voltage

Contextual Info: Preliminary Data Sheet PD-20598 rev. B 11/98 HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

HF50A060

Abstract: GA75TS60U HF50A060ACE
Contextual Info: PD - 2.599-1 Preliminary HF50A060ACE HF50A060ACE Hexfred Die in Wafer Form 600 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max)

acb322513

Abstract: 100R10
Contextual Info: 9415_HF_ACB 1/2 EMC Components HF70ACB, HF50ACB, HF30ACB Series Ferrite Beads SMD FEATURES • This extensive series completely covers impedance values ranging from 7 to 125Ω[100MHz] and can be applied to a wide range of circuits. • The 2012, 3216, 3225 and 4532 types all use HF70, 50 and 30

Contextual Info: 1/3 Chip Beads(SMD) For Signal Line Conformity to RoHS Directive HF70ACB, HF50ACB, HF30ACB Series FEATURES • This extensive series completely covers impedance values ranging from 7 to 125Ω[100MHz] and can be applied to a wide range of circuits. • The 2012, 3216, 3225 and 4532 types all use HF70, 50 and 30

Contextual Info: Ferrite Chip EMI Suppressors ACB Series ACB321611TYPE SHAPES AND DIMENSIONS/RECOMMENDED PC BOARD PATTERNS 3 2 ±o 2 REFLOW AND FLOW SOLDERINGS 1.1 1.1 2.2 Dimensions in mm HF50ACB321611 ELECTRICAL CHARACTERISTICS Rated current mA max. Part No.* Impedance

Contextual Info: Preliminary D a ta sh e e t PD-20599 rev. B 11/98 International IQR Rectifier HF50A060ACE Hexfred Die in W afer Form 600 V Size 50 5" W afer Electrical Characteristics Wafer Form Parameter Description V fm Forw ard Voltage BVr I RM Guaranteed (Min/Max)

Contextual Info: 1/3 Chip Beads(SMD) For Signal Line Conformity to RoHS Directive HF70ACB, HF50ACB, HF30ACB Series FEATURES • This extensive series completely covers impedance values ranging from 7 to 125Ω[100MHz] and can be applied to a wide range of circuits. • The 2012, 3216, 3225 and 4532 types all use HF70, 50 and 30

Contextual Info: 1/4 Chip Beads(SMD) For Power Line Conformity to RoHS Directive HF70ACC, HF50ACC, HF30ACC Series FEATURES • With 4 types rated at 1.5A and 3 types rated at 3A, and with a range of frequency characteristics available for each type, the ACC series facilitates selection of the most appropriate part for

HFA32PB120

Abstract: HF50C120ACB
Contextual Info: Previous Datasheet Index Next Data Sheet PD-2.496 TARGET HF50C120ACB HF50C120ACB Hexfred Die in Wafer Form 1200 V Size 50 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current

YHP4191A

Abstract: HF70 HF70ACB HF30ACB453215
Contextual Info: 1/3 Chip Beads(SMD) For Signal Line Conformity to RoHS Directive HF70ACB, HF50ACB, HF30ACB Series FEATURES • This extensive series completely covers impedance values ranging from 7 to 125Ω[100MHz] and can be applied to a wide range of circuits. • The 2012, 3216, 3225 and 4532 types all use HF70, 50 and 30