HF TRANSISTORS TABLE Search Results

SOT123 Package

Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

smd npn 2n2222

Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

741 datasheet motorola

Abstract: MOTOROLA 934 motorola MOSFET 935 905 motorola MRF182 MRF182S
Contextual Info: MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz

TH430

Abstract: SD1728 M177
Contextual Info: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and

Fair-Rite ATC

Abstract: B074 dale rs-2b dale rs-2b 3w 2B43B SURFACE MOUNT RESISTOR 200B M177 SD2923 f-30MHz
Contextual Info: SD2923 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION Pout = 300W MIN. WITH 16 dB GAIN @ 30 MHz . THERMALLY ENHANCED PACKAGING DESCRIPTION The SD2923 is a gold metallized N-Channel MOS

A1727

Contextual Info: MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz

MRF182

Abstract: MRF182S Rite-274301944 MRF1825
Contextual Info: MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz

Product Selector Guide

Abstract: NI-400S-2S
Contextual Info: RF Military Power LDMOS Transistors Freescale’s LDMOS technology is ideally suited for military applications such as battlefield communications, primary radar covering HF, VHF, UHF, L-Band, S-Band, and avionics such as IFF transponders , and electronic warfare jamming. The high

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device • Broadband performance from HF to 1 GHz. • Bottom side source eliminates DC isolators, reducing common

TH430

Abstract: M177 JESD97 SD1728 TH430 marking
Contextual Info: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and

STAC4932

Abstract: STAC4932F st marking code STAC244F 1715
Contextual Info: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%

Contextual Info: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description

MEC 1300

Abstract: 2x100mA STAC244F
Contextual Info: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%

SD2941-10

Abstract: SD2931-10 VK200 Power Transformer EE-19
Contextual Info: SD2941-10 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features • GOLD METALLIZATION ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 175W MIN. WITH 15dB GAIN @ 175MHz ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR

zt12-9

Abstract: zt129
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N-Channel Enhancement-Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common

SD2942

Abstract: RG316-25 SD2942 equivalent 200B 700B RG316 SD2932 ST40 SD2932 reference Fair-Rite bead
Contextual Info: SD2942 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features • GOLD METALLIZATION ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION, PUSH PULL ■ POUT = 350W MIN. WITH 15dB GAIN @ 175MHz ■ LOW R DS on M244 Epoxy sealed Pin Connection

McMaster-Carr

Abstract: SD3933 12AWG 700B M177 MCMASTER 92196A146 ATC200B103MW50X 92196A1 92196A108
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive

RG316-25

Contextual Info: STAC3932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description

SD2941-10

Abstract: EE-19 transformer SD2931-10 VK200
Contextual Info: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower

STAC3932F

Abstract: RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v
Contextual Info: STAC3932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European

100C

Abstract: 700B SD3932
Contextual Info: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description

L13T

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device • Broadband performance from HF to 1 GHz. • Bottom side source eliminates DC isolators, reducing com mon