HF AMPLIFIER 100W Search Results

HF Amplifier 300w

Abstract: hf amplifier 100w mosfet HF amplifier hf class AB power amplifier mosfet 300-0130M MRF151G mrf151g date MRF151G hf amplifier mrf151g 300 GR00166
Contextual Info: HF 300-0130M 300 W HF Amplifier Designed for HF band, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 1 ÷ 30 MHz 50 Volts Input / Output 50 Ohm Pout : 300 W min Gain : 22 dB typ.

rca 40410

Abstract: rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C to 30 A . . •c pm k - 12 A lc = 10A Py =7 5 •100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU106 2N5840 [N-P-N] 2N 52 40 [N-P-N] BU106 2N5838 Va o sus =l40V VCER(sus) =275 V hFE = 20min. hFE.:8 ;" 0) /

TIS43 Unijunction Transistor

Abstract: acrian RF POWER TRANSISTOR motorola s200 hFE-200 to-92 npn 12v 50w class t amplifier acrian 2SC4127 TIS43 2sc3374 unijunction transistor TIS43
Contextual Info: ADDITIONAL TRANSISTORS Item Number RF 5 10 Part Number r Amplifi rs, fT POW S01080-2 S01115-2 S01127 S01143-1 S01219-5 S01222-6 S01229-1 S01278 S01405 S01416 20 S01438-2 S01446 S01477 S01487 S200-50 S25-50 S80-12 VAM120 VAM40 Polarity > 300 ThmsnCSFEFC ThmsnCSFEFC

Contextual Info: Product Review RPFow& erWR S m 15 8 o-.fr2 et5 rM H V/-hH FU z/FH2F00W MFJ offer the best RF Power & SWR meter for 1.8-525Mhz - HF / VHF / UHF 200W. This awesome product currently in stocks, you can get this Electronics now for only $133.44. New More Information»

Contextual Info: 2SA1943 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 2 0 .5 M A X • • 3.3 ±0 .2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC

RCA 40313

Abstract: RCA413 40328 RCA411 2N5415 40318 RCA 2N3439 2N3440 2N5840 2N6079
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

dtmf principle

Abstract: murata pkm34ew TEA1093 balanced microphone schematic Piezo Ceramic Microphones MRC D17 TEA1112 5 volt piezo microphone switches Piezo Contact Microphone AN95050
Contextual Info: APPLICATION NOTE Application of the TEA1112 and TEA1112A transmission circuits AN95050 Philips Semiconductors Application of the TEA1112 and TEA1112A transmission circuits Application Note AN95050 Abstract The TEA1112 and TEA1112A are bipolar transmission circuits for use in electronic telephone sets. They are

D1212UK

Contextual Info: TetraFET Illl iFFs Illl SEME D1212UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W -12.5V -500M H z PUSH-PULL B 4 pis FEATURES J i • SIMPLIFIED AMPLIFIER DESIGN A A H • SUITABLE FOR BROAD BAND APPLICATIONS

D1212UK

Abstract: hf amplifier 100w
Contextual Info: TetraFET D1212UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 12.5V – 500MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND APPLICATIONS

hf amplifier 100w

Abstract: D1012UK
Contextual Info: TetraFET D1012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND APPLICATIONS

hf amplifier 100w

Abstract: D1022UK
Contextual Info: TetraFET D1022UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: mi TetraFET § ^ § INI D1012UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W -28V -500M H z PUSH-PULL B 4 p is c G (ty p ) A 2 _ ▲ A 1 n . D 3 n - . ! • * " • ▼ . _ j

Contextual Info: TetraFET Illl ÉFFÉ Illl D1018UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W -28V -500M H z PUSH-PULL _ B 2 pis . A- 12 3 4 A i. i * 6 7 6 5 j Typ. FEATURES u • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: UH TetraFET SEME D1022UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V -500MHz PUSH-PULL A g Ç F pî ir j ► FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J * ' I * M N • SUITABLE FOR BROAD BAND APPLICATIONS

hf amplifier 100w

Abstract: d1036uk
Contextual Info: TetraFET D1036UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1036UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS

D1025UK

Contextual Info: TetraFET D1025UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: bOE SEMELAB D • Ö1331Ö7 DODOTMD Ob4 ■ S Ï Ï L B PLC SEMELAB D1018UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W -28 V -500M H z PUSH-PULL MECHANICAL DATA Dimemsions FEATURES • SIMPLIFIED AMPLIFIER DESIGN PINI

Contextual Info: TetraFET D1036UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1025UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS

064R

Abstract: D2084UK power amplifier s band 3 ghz 100w
Contextual Info: D2084UK.01 MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 1GHz PUSH–PULL E (4 pls) F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N O M J K • SUITABLE FOR BROAD BAND APPLICATIONS

D5012

Abstract: hf amplifier 100w
Contextual Info: TetraFET D5012UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND

hf amplifier 100w

Abstract: rf amplifier 100w D1025UK
Contextual Info: TetraFET D1025UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1036UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS