HEXFRED Search Results

thermistor ntc

Abstract: E78996 bridge UPS circuit diagram pcb 50mt060whta 50MT060WHTAPB
Contextual Info: 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC)

Contextual Info: CPV364M4FPbF Vishay High Power Products IGBT SIP Module Fast IGBT FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses RoHS • HEXFRED soft ultrafast diodes COMPLIANT • Optimized for medium speed 1 to 10 kHz

transistor SMD MARKING CODE HF

Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor
Contextual Info: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A

HFA45HI120C

Contextual Info: International I R Rectifier HEXFRED P D -2 .3 7 5 Provisional Data Sheet HFA45HI120C u l t r a fa s t, s o f t r e c o v e r y d io d e Features: Major Ratings and Characteristics Units Characteristics V br per leg lF(AV) 1200V, 28A 1200 V 28 A trr (per leg)

HFA45HC60C

Abstract: transistor k31
Contextual Info: PD-2.368 International US Rectifier_ HEXFRED Provisional Data Sheet HFA45HC60C 600V, 45A ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics Units Vbr per leg 600 V lF(AV) 45* A trr (Per leg) 75 ns Qrr (per leg) 375 nC

dm 465

Abstract: HFA135NH40 IRFP250 NC4000
Contextual Info: PD -2.465 rev. B 03/99 HFA135NH40 HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters a d BASE CATHODE V R = 400V VF typ. ƒ = 1V IF(AV) = 135A

HFA08PB120

Abstract: IRFP250
Contextual Info: Bulletin PD -2.365 rev. B 11/00 HFA08PB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V BASE CATHODE Features VF typ. * = 2.4V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4

HFA140NJ60D

Abstract: IRFP250
Contextual Info: PD -2.514 rev. A 02/99 HFA140NJ60D HEXFRED Ultrafast, Soft Recovery Diode TM Anode 1 Features Cathode 2 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Base AC VR = 600V VF typ. ƒ = 1.2V IF(AV) = 140A Qrr (typ.) = 340nC

HFA06TB120

Abstract: IRFP250 transistor D207
Contextual Info: Bulletin PD -2.382 rev. D 12/00 HFA06TB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 IF AV = 6.0A Qrr (typ.)= 116nC

irm 1838

Abstract: HFA30PB120 IR 1838 OZ 9936 transistor D207 IRFP250
Contextual Info: Preliminary Data Sheet PD-2.604 rev. A 12/00 HFA30PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.4V

400uH

Abstract: GB35XF120K
Contextual Info: Bulletin PD - 94570 rev.B 08/03 GB35XF120K IGBT SIXPACK MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

Contextual Info: VS-HFA140FA60 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 140 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly

Contextual Info: VS-HFA180NH40PbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 180 A FEATURES • Very low Qrr and trr Lug terminal anode • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see

AAAA series SMD transistor

Contextual Info: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2

Contextual Info: VS-VSKDU162/12PbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Diodes, 100 A New INT-A-PAK Power Modules FEATURES • Electrically isolated: DBC base plate • Standard JEDEC® package • Simplified mechanical designs, rapid assembly • High surge capability

Contextual Info: PD - 95682A HFA16PA60CPbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V 2 VF = 1.7V Qrr * = 65nC 1 di rec M/dt * = 240A/µs

GB05XP120KTPBF

Contextual Info: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses

Contextual Info: Bulletin PD-21116 04/06 HFA210NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications

PD245

Contextual Info: PD -2.453 rev. B 02/99 HFA240NJ40C HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE V R = 400V VF typ. ƒ = 1V

motor IG 2200 19 X 000 15 R

Contextual Info: PD -5040 CPV364M4F PRELIMINARY IGBT SIP MODULE Fast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating 1 to 10 kHz

Contextual Info: HFA30TA60CS Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

Contextual Info: Bulletin I27143 Rev.B 07/03 25MT060WF "FULL-BRIDGE" IGBT MTP Warp Speed IGBT Features • Gen. 4 Warp Speed IGBT Technology • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor

Contextual Info: PD -5038 CPV363M4F PRELIMINARY IGBT SIP MODULE Fast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating 1 to 10 kHz

Contextual Info: PD -5.046 CPV362M4F IGBT SIP MODULE Fast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating 1 to 10 kHz See Fig. 1 for Current vs. Frequency curve