HEP 3 Search Results

DMILL

Abstract: RAD HARD TRENCH TRANSISTOR BPSG HEP transistors hep silicon diode 1E14 temic jfet jfet n channel ultra low noise nuclear Neutron Radiation Detector
Contextual Info: 10MRAD Si DMILL Mixed Analog/Digital Radiation Hard BiCMOS An emerging need in HEP MPW The decision to develop new equipment for High Energy Physics (HEP) research has led the need for ultra rad hard technology. The radiation tolerance for detector electronics adjacent to proton collision

DMILL

Abstract: nuclear radiation detector Higgs 3 microprocessor radiation hard Neutron Radiation Detector Bipolar Junction Transistor npn LHC HEP transistors 10MRAD
Contextual Info: 2 rad s/cm M 10 utron 14 ne 10 DMILL mixed analog/digital Radiation Hard BiCMOS An emerging need in HEP The decision to develop new equipment for High Energy Physics HEP research has lead to the need for ultra hard technology. The detector electronics adjacent to proton collision areas can accumulate radiation doses

dk96

Abstract: 1R91 philips oszillator Scans-0017813 philips BC 047 tube DK 92 33kfk
Contextual Info: P H IL IP S [DK96 HEPÎODE for use as frequency changer in battery sets HEPTODE pour utilisation en changeuBe de fréquence dans des appareils batterie HSPÎODE zur Verwendung als Mischröhre in Batterie­ geräten Heating :direct by D.C.; parallel or series supply

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

hep silicon diode

Abstract: 36CP D5160
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HEP 2Q(Q F)L2CZ47A Unit in mm SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. 03-2 ± 0 .2 -y~~- • Repetitive Peak Reverse Voltage : V^g^=200, 300V • Average Output Rectified Current : Io=20A

ECH21

Abstract: 8A kq g4 5c triode philips oszillator gt250
Contextual Info: PHILIPS ECH21 TBIODE-HEPTODE for use as frequency converter, H.F.* 1.F. and L.F. amplifier and phase inverter TRIODE-HEPÎODE pour utilisation comme changeuse de fréquence, amplificatrice R.F., M.F. et B.F. et comme tube Inverseur de phase TRIODE-HEPTODE zur Verwendung als Mischröhre, H.F.-,

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

S11V

Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Contextual Info: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s

Contextual Info: HEP series 125℃ Super Low ESR・High Reliability • Specifications Items Rated voltage （Ｖ） Surge voltage （Ｖ） Category temperature range （℃） Capacitance tolerance

Contextual Info: a Bed HSU R S M 07-004 N° du FARR. MANUF. Nr B HEP ST. Nr 2. Pour i ’acceasot-re seutr v o ir page 33. 1. Pour 1e* brochages et lot po*itionnement* do * i«olants v o ir pages 10 a 12 NOTA. 2. For the p e rt alone, see page 23 . 1. For contact arrangements and alternate in se rt positions see pages 10 to 12,

Contextual Info: HEP series 125℃ Super Low ESR・High Reliability • Specifications Items Rated voltage （Ｖ） Surge voltage （Ｖ） Category temperature range （℃） Capacitance tolerance

Contextual Info: O LkJ I—o Q IC Insulator Viewed from wiring side Hep X / o«< Ou= = uc <au— ^ ö 10 sockets x 0.9 mm 2 2 3 2 4 5 /. 6 2 7 2 8 /. 9 0 10 0 - . - . . . v B it : Keying 2 9 9 2 2 9 9 2 Y 2 9 1. 2 2 2 9 2 9 2 /. 2 2 9 . - . . . 1. 1 1 Dimensions mm PCB drilling

Contextual Info: Preliminary STP1100BG A S un M ic r o e l e c t r o n ic s J u ly 1997 microSPARC -llep DATA SHEET SPARC v8 32-Bit Microprocessor With PCI/DRAM Interfaces D e s c r ip t io n The microSPARC-IIep 32-bit m icroprocessor is a highly integrated, high-perform ance microprocessor. Im ple­

MIC2025-2YMM

Abstract: MIC2025-1BM MIC2025-1BMM MIC2025-2BM MIC2075 MIC2025-1YMM
Contextual Info: MIC2025/2075 Micrel, Inc. MIC2025/2075 Single-Channel Power Distribution Switch MM8 General Description Features ThePMIC2025Pa dPMIC2075Pa ePhigh- idePMOSFETP i che P i i edP f P ge e a eP e P di ib i P e i i gP ci c i P ec i .P P P P P P TheP MIC2025/75P a eP i e a P c e P i i edP a dP ha eP

hep 50

Abstract: HEP801 HEP 801 hep-802 HEP802 HEP transistors HEP 802 HEP300 hep-801 HEP 3
Contextual Info: CURRENT 8.0 Amperes VOLTAGE 50 to 600 Volts HEP801 THRU HEP806 Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Low forward voltage drop · High current capability · High reliability · Low power loss, high effciency

he10

Contextual Info: Contents RockStar Kits RockStar® kits RockStar® Kits Overview E.2 Kits with HA inserts E.4 Kits with HE inserts E.8 Kits with HSB inserts E.28 E E.1 RockStar® kits Overview RockStar® Kits + + E HDC Kits are standardized sets of components for constructing

hep 50

Contextual Info: CURRENT 16.0 Amperes VOLTAGE 50 to 600 Volts HEP1601 THRU HEP1606 Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Low forward voltage drop · High current capability · High reliability · Low power loss, high effciency

mc 741

Abstract: BBO-320-1000P-9113-C
Contextual Info: O í l T M H e C K M e 6 e c K O H T a K T H b ie Ü O M e H K B b iic n io H a T e jik i J i a i y p a H a n p ^ D K e H iie m n a p a M e T p b i n u T a m is i nocTosiHHoro TOKa I o m o p| C x e M b l n O flK / lK D H e H M fl C H G T b ip b M Ç l Bbl 3 0 ,0 ,3 M M

Contextual Info: In many applications, it is necessary to use muitipofe connectors which have shortened dimensions but require high contact density. LEMO short series connectors, which are shorter than 30 mm, perfectly meet these needs. The 2C series, featuring a hermaphroditic insert, is available in muitipofe type up to 14 contacts.

J1772

Abstract: ITT Cannon J1772 SAE J1772 veam SAE-J1772 ITT 25 contact ITT Interconnect DSASW00214064 d-sub backshell HEP transistors
Contextual Info: Interconnect Solutions Cannon, VEAM, BIW Delivering the Industry’s first, UL Rated, J1772 Level 2 “75 AMP” Less than Four Hour Charging Solution UL Recognized – Level 2 75Amp Charging With the recent release of the SAE Electric Vehicle J1772 charging specification in 2010,

smartmedia

Abstract: CN015P-3004-01
Contextual Info: S m a rtM e d ia CN015P-3004-01 V J Type 30 connector fo r PCMCIA Case • For use with Duel Systems Ultrasonic W eld ed PCM CIA case • Accepts either 3.3V or 5V card CL Lry □ z u Series Name 30 Applications □ £ 1 Specifications C N D Í5P -3D 04-G 1

DIN en 61984

Abstract: HDC-KIT-HE 06100 HE 301
Contextual Info: Product catalogue | Heavy Duty Connectors | Kits | HE 6-pole | PG General ordering data Order No. Part designation Version EAN Qty. 1712700000 HDC-KIT-HE 06.200 HDC kit, HE, BG: 3, Poles: 6, Screw connection, 500 V, 16 A, diecast aluminium, Plug housing /

Contextual Info: — 3.00 [.118]- -— REV. DATE D E 5 C R P T I0 N NC Û4/Û3/Û5 INITIAL RELEASE 3.20 [.126] 8.30 [.327] — «mm* RECO MMENDED CABLE STRIPPING D IM 'S CM CM *QD O O <D LO ro o o CN o - 10.80 [. 426 ] - tmcwisc GPsanm d n d g d n s arc IN MLUMETERS, HW W N9 M [ 1 ARE IN

2SB807

Abstract: 100vie JT MARKING 2SD1009 i marking 2SD100 marking j
Contextual Info: Panasonic 2SD 1009 '> ij = i> N P N X itŒ fiJIttK ItfH H M l 2S B 807 t 3 V ? i ¿ • V 2 Unit : mm 4.5±0.1 ß • 3 Pc ñ f tí moT^9-08, ft-4 45^ 3 1 ' ^ ' i ; - / i'ILŒ VcEo A'SS'-'o • 1.5+0.1 £±CL U tf±è • ; ^gÿ/xv—^'° y Jr —'>"<7^fzsóWí^í-<^¡'hM'íta<£y-”,