HEMT TRANSISTOR Search Results

B W4 Transistor

Abstract: transistor hemt TRANSISTOR W2 Stanford Microdevices 4 ghz
Contextual Info: Product Description SMW Series Stanford Microdevices’ SMW Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in thermally-efficient ceramic packages. These HEMT MMICs are fabricated using molecular beam epitaxial growth

MGF4919G

Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically

GD-32

Abstract: mgf4941al fet K 727
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz

MGF4961

Abstract: MGF4961B GS 1,2 12 MGF4961B data sheet InGaAs HEMT mitsubishi 4652 fet MGF496
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Feb./2007 MGF4961B SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4961B super-low noise HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. (unit: mm) 4.0±0.2 1.9±0.1 (1.05)

Contextual Info: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth

low noise hemt transistor

Abstract: InGaAs HEMT mitsubishi MGF4951A MGF4952A
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.

mgf4953a

Abstract: MGF4954A
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MG F4953A/MG F4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.

FHX35

Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
Contextual Info: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.

GD-30

Abstract: InGaAs HEMT mitsubishi
Contextual Info: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

top 261

Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz

gD 679 transistor

Abstract: MGF4316G MGF4319G InGaAs HEMT mitsubishi mgf431 MGF4319
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF431xG Super Low Noise InGaAs HEMT DESCRIPTION The MGF431xG series super-low-noise HEMT High Electron Mobility Transistor is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures

MGF4317D

Abstract: MGF-4317D MGF4310 MGF4316D MGF4318D 4310D
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic

MGF4918D

Abstract: MGF4910D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d
Contextual Info: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to l< band amplifiers. The hermetically sealed metal-ceramic

MGF4919

Abstract: MGF4919G
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The

HEMT 36 ghz transistor

Contextual Info: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

MAGX-000035

Contextual Info: MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Production V1 10 Feb 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation

K 1358 fet transistor

Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.

CGH40045F

Abstract: CGH40045 10UF cree L2
Contextual Info: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

transistor 1345

Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

GaN hemt

Abstract: Gan hemt transistor
Contextual Info: MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Features •       GaN depletion mode HEMT microwave transistor Common source configuration

Contextual Info: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V2 26 Oct 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

GaAs FET HEMT Chips

Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

TRANSISTOR C 4460

Abstract: InGaAs HEMT mitsubishi MGF4953B MGF495
Contextual Info: Nｏｖ./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4953B SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.

Contextual Info: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high