HEM 152 Search Results

Contextual Info: FLU17XM L - B an d M edium & High Power GaAs FETs ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta=25°C Hem Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 7.5 w °c °c Total Power Dissipation Tc = 25°C PT Storage Temperature

SN76477

Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Contextual Info: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p

FLC301XP

Abstract: 32 mag wire
Contextual Info: FLC30JXP GaAs F E T and H E M I Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Symbol Hem Saturated Drain Current IDSS Test Conditions 1200 1800 mA - 600 - mS -1.0 -2.0 -3.5 V -5 - - V 33.5 34.8 - dBm 8.5 9.5 - dB VDS = 5V, Iq s = 800mA Pinch-off Voltage

7428F

Contextual Info: F LM 3 742-8F Internally Matched Power ìaAs i h ! s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Symbol Hem Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Condition Rating Unit vds 15 V vgs -5 V 42.8 w °c °c Tc = 25°C Pt Storage Temperature

1213-I2F

Abstract: FUJITSU F 1213
Contextual Info: F L M 1213-12 F Internally M atch ed Power ìa A s I- l ì ! s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Hem Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 57.6 w °c °c Total Power Dissipation Tc = 25°C

HEM 152

Abstract: HEM158 HEM151 HER151 HER158
Contextual Info: HIGH EFFICIENCY SURFACE MOUNT RECTIFIERS HEM151 THRU HEM158 1.5 AMPS. High Efficient Surface Mount Rectifiers Features For surface mounted application Low forward voltage drop Low profile package Built-in stain relief, ideal for automatic placement Fast switching for high efficiency

Contextual Info: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2 l097,1S2x16(word mode) The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is

16205d

Contextual Info: Preliminary CMOS MASK ROM KM23C16205DSG 16M-Bit 1Mx16 /512KX32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16{word mode) The K M 2 3 C 1 6 2 0 5 D S G is a fully static m ask programmable 5 2 4 ,2 8 8 x 32{double word mode)

Contextual Info: \ Nippon / AMORPHOUS CHOKE COIL | CHEMhCONI Reference sa mple ^ D : M aximum outer diameter w : M aximum width Total lead length ( L ) * : 30mm l+amm, -3mm) Soldering boundary ( a ) ': Omm (+4mm, -Omni) • The bottom of Ihe core or coil (v )is defined as

nsm 4000

Abstract: GE 0386
Contextual Info: IR 3/16 Enc o d e/Dec o d e IC Tec hnic a l Da t a H SDL-7001-2500 p c ,t a p e a nd r eel H SDL-7001# 100-100p c , 50/t u b e Fea t u r es Desc r ip t io n ¥ Co m p lia nt w it h Ir DA 1.0 Phy sic a l La y er Sp ec s ¥ Int er fa c es w it h Ir DA 1.0 Co m p

Contextual Info: KM68V2000, KM68U2000 Family CMOS SRAM 2S6Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Process Technology : 0,4nm CMOS • Organization: 256Kx8 • Power Supply Voltage KM68V20Q0 Family : 3.0V - 3.6V KM68U2O0O Family : 2.7V ~ 3.3V

Contextual Info: Diodes international IS2R Rectifier Fax on Case Demand O utline Key Number •fsm Part Number V RRM V 1FAV@Tc (A) (C) Yf* @ 'fM (V) (A) 50 Hz (A) &0Hz (A) R6»C(DC) (°C/W) Notes Standard Recovery DQ-205AC (D0-30) S D 150N 20P C 2000 (50 125 1.5 470 3000

Contextual Info: FHX35X GaAs FET & HEMT Chips ELECTRICAL C H A R A C T E R ISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions Min. Limit Typ. Max. Unit VDS =2V, V q s = OV 15 40 85 mA Transconductance 9m VDS = 2V, Id s = 10mA 40

Contextual Info: FLK052XV G a As F ET and HEMT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current >d s s Test Conditions 200 300 mA - 100 - mS -1.0 -2.0 -3.5 V - V Vqs = 5V, Ids = 125mA Pinch-off Voltage vp Vos = 5V, ids =

et 1103

Abstract: FLK012XP
Contextual Info: FLK012XP Ga A s F ET and HEMT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions - 60 90 mA - 30 - mS -1.0 -2.0 -3.5 V -5 - - V 19.5 20.5 - dBm 7.0 8.0 - dB - 26 - % - 2.5 - dB 7 - dB 11

Contextual Info: A COMPANY OF MODEL SOGC Thick Film Resistor N etw orks D u al-ln-Lin e, S m all O u tlin e M olded Dip 0 1 , 0 3 , 0 5 S c h e m a tic s - 16 or 2 0 Pins FEATURES • Reduces total assembly costs • .110" [2.79mm] maximum seated height • Rugged, molded case construction

Contextual Info: 3 : Te le sco p ic Ra ils 3 .1 Te le scopic Ra ils 6 0 k g D Despit e t heir rugged const ruct ion, t hese are am ong t he slim m est t elescopic rails avaiable on t he m arket . All types can be locked in the extended position and are itted with a quick release latch. The load carrying capacity of

CT 1061 C 40

Abstract: a4td1 1110 mmic
Contextual Info: M aann A M P ic o m p a n y Silicon Bipolar MMIC Cascadable Amplifier MA4TD1110 V2.00 Features • • • • • • • Gold-Ceram ic Microstrip Package Outline1: High Dynamic Range Cascadable 50£2/75£2 Gain Block 3dB Bandwidth: 50 MHz to 1.3 GHz 17.0 dBm Typical PldB @ 1.0 GHz

Contextual Info: n ic h ic o n ALUMINUM ELECTROLYTIC CAPACITORS GK HH PC B o a rd M o u n tin g T y p e series Anil •Solver I Feature {Through 100V only • Higher C/V products. • Plentiful line-up from 0 3 5 X 6 3 to 04OX1OOmm. • A uxiliary te rm in a ls provided to assure anti-vibration perform am ance.

AL4A

Abstract: IM1618 fC-90B
Contextual Info: re -9 5 re-90 5 r e H e p a T o p H b iii C BepxBbicoKO M acTO TH biii rEHEPATOPHblM CBEPXBblCOKOHACTOTHbm TPMOfl MICROWAVE TRIODE T p n o fl TC-9 B (rC-905) npeflHa3HaneH fl/ia reHepupoBaHun BbicoKOMacTOTHbix KoneôaHMM b reHepaTopax c B H e u u Heii oôpaTHOM CBA3bio b HenpepbiBHOM pe>KMMe pa6oTbi b fleL(HMeTp0B0M flMana30He bojih.

PM50302F

Abstract: diode H5 1.5-25 5v.1 45F125
Contextual Info: HITACHI PM50302F SILICON N -C H A N N E L POWER MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • Equipped with Power MOS FET • Low OrvResistance • High Speed Switching • Low Drive Current • Wide Area of Safe Operation • Inherent Parallel Diod between Source and Drain

Contextual Info: H D 7 4 A L V C H 1 6 3 7 3 — Preliminary — 16-bit Transparent D-type Latches with 3-state Outputs Description The HD74ALVCH16373 is particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers. It can be used as two 8-bit latches or one 16-bit latch. When the latch

Contextual Info: S urface H I 0 II N1 SINGLE ROW TERMINATION SRT PIN #1 IDENTIFICATION MARK £ 2.03 ±12 .080 ±.005 I PART NO. CTS DATE 7 T SEATING PLANE "A " - In-Line Surface M ount Resistor N etw orks • F gli dens i t y p a c k a y r u ■ L o w p r o f Ic: • 0.1

1N5665A Zener Diode

Abstract: in5647a 1N5647 1N5657 tvs unipolar DO-13 diode 1n5658 IN5665A 1N5638 1N5644 1N5645
Contextual Info: T ra n s ie n t V oltag e S u p p re s s io n TV S D io d e s n :31.8min. : | | _ J 1 b 33 7.5 9.0 :25.4;min. T iim s ib te P rotection MAXIMUM RATINGS When no problems exist, Oyctom TVS • Peak pulse power (P pk): 1500 watts Diodes are totally invisible to the circuits