MJ15150
Abstract: HAT2142H SC-10
Contextual Info: HAT2142H Silicon N Channel Power MOS FET Power Switching REJ03G1194-0700 Previous: ADE-208-1583E Rev.7.00 Sep 07, 2005 Features • • • • Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 35 mΩ typ. (at VGS = 10 V)
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HAT2142H-EL-E
Abstract: HAT2142H
Contextual Info: Preliminary HAT2142H Silicon N Channel Power MOS FET Power Switching REJ03G1194-0800 Rev.8.00 Jul 29, 2009 Features • • • • Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS on = 35 mΩ typ. (at VGS = 10 V)
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HAT2142H
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2sc5998c51392sc52472sc5907+162sd15042sj3612sk4392sk4942sk3349bcr5km-12l1002ds6020v4transistor bj 131-62sc 8550transistor 2sc1417hitachi 08122btransistor h9456030v42sc 805025aaj
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HAT2142H
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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rej01g0001-0400rjh3047rjh3077rjp3047+7rjh3047dpkrjp3049rjp6065rjp3053rjp3042smd code fx mosfetrjp6055
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3sk3093sk3173sk318bb101c+16bb102cbb301cbb302cbb304cbb305cbb501c2sc 85506020v46030v4hitachi 08122b2sc 8050hitachi 08123btransistor h945h945transistor c 6030v42sk3545
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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LFPAK package
Abstract: HAT2064R HAT2099H HA16163 converter DC-DC SOP-8 synchronous rectification H5N2508DS HA17L431ALP HAT2058R HAT2077R
Contextual Info: For Communication Equipment High-Efficiency DC/DC Converter Power Supplies Features and Merits Features Merits Low on-resistance Improved power supply efficiency Low Qg, low Qgd Low drive loss energy saving in standby mode High-speed switching Low switching loss
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h7n1002ls/lmhat2064rhat2118rhat2116h+12hat2096hhat2099hfy12aaj-03ffy14aaj-03flfpak packageha16163converter dc-dc sop-8synchronous rectificationh5n2508dsha17l431alphat2058rhat2077r
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1002ds
Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5
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24empbrc124etpbrc143etpbrc144ecm+16cr3km-12fs10km-6fs10vs-6fs16km-6fs16vs-6hat3017r1002ds4008zb2sc 9012mp 1009 es2sc 805020aaj-8h6020v42sc14172sc 8550cr3as
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HAT1125H
Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
Contextual Info: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient
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upa27xxut1ar07pf0002ed0100hat1125hff 0401+8hat2270hlfpak footprint renesasrjk305upa2749ut1arjk03c1dpbrjk305dpbupa2802t1lupa2807t1l
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H7N1009MD
Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility
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cr3km-12cr6km-12cr8km-12o-220fn+16ot-89cr03am-16cr04am-12sc-59cr03am-12cr05am-12h7n1009mdhat2153rjtransistor fs10kmhat2180rpdiode h5nh7p1006mdimmobilizer antennacr3as-12hat1081rcr3as
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