HARRIS TOP MARKING Search Results

pin diagram AMD FX 9590

Abstract: Transistor AF 138 laser sharp measurement d6406 pby 283 diode data book SN74298
Contextual Info: V o lu m e 5 $5.00 Harris Semiconductor Sector Capabilities Harris Semiconductor, one of the top ten U.S. merchant semiconductor suppliers, is a sector of Harris Corporation — a producer of advanced information processing, communication and microelectronic

21s07

Abstract: flip flap 450-001 9651
Contextual Info: DALLAS SEMICONDUCTOR APPROVED DOCUMENT 45–20000–001 ORIGINATOR DESCRIPTION REV. C PAGE 1 OF 12 ECN NUMBER DATE REV. Jim Walling Original Issue 14035 05/09/97 A Marzella Harris Add figure B2, delete label on top of box, Custome label, Insert bar code contents, and

HS-65C262

Contextual Info: HARRIS SEMICONDUCTOR HS-65C262RH/RRH HS-65T262RRH Radiation Hardened 16Kx 1 CMOS RAM December 1992 Features Pinouts 20 PIN CERAMIC DIP CASE OUTLINE D8, CONFIGURATION 3 TOP VIEW • Radiation Hardened EPI-CMOS • Total Dose 2 x 10s RAD SI - Transient Upset > 5 x 108 RAD(Sl)/s

Contextual Info: HS-6664RH HARRIS S E M I C O N D U C T O R Radiation Hardened 8K x 8 CMOS PROM August 1994 Features Pinouts 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW • 1.2 Micron Radiation Hardened Bulk CMOS • Total Dose 3 x 10s RAD Si

HS-3530RH

Contextual Info: fü HARRIS HS-3530RH S E M I C O N D U C T O R Low Power, Radiation Hardened Programmable Operational Amplifier April 1995 Pinout Features HS2-3530RH 8 PIN METAL CAN TOP VIEW • Radiation Environment - Neutron Fluence 0> 5 x 1012 n/cm2 (E > 10KeV) - Gamma Rate Ci) 1 x 109 RAD (Si)/s

J5004

Contextual Info: HS-65643RH HARRIS S E M I C O N D U C T O R Radiation Hardened 64K x 1 SOS CMOS Static RAM December 1992 Pinouts Features HS1-65643RH 24 PIN CERAMIC DIP CASE OUTLINE D3, CONFIGURATION 3 TOP VIEW • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 10s RAD Si

Contextual Info: HS-65758RH HS~65759RH HARRIS S E M I C O N D U C T O R PRELIMINARY Radiation Hardened 32K x 8 SOI CMOS Static RAM December 1992 Pinouts Features HS1-65758RH 28 PIN SIDEBRAZE DIP TOP VIEW • 0. 8 Micron Radiation Hardened SOI CMOS - Total Dose 3 x 1 0 s RAD Si

IFU120

Abstract: fu120 IFU-121 fr120 irfu121 Harris IRFR120 IRFU N-Channel Power MOSFETs a 4556
Contextual Info: m HARRIS IR FR 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Packages Features T 0 -2 S 1 A A TOP VIEW • 8.4A, 80V and 100V • rDS on = 0 .2 7 0 3 SOURCE • Single Pulse Avalanche Energy Rated DRAIN

burn-in

Contextual Info: æ HS-6551RH HARRIS S E M I C O N D U C T O R Radiation Hardened 256 x 4 CMOS RAM December 1992 Features Pinouts • Functional Total Dose 2 x 104 RAD SI HS1-6551RH 22 PIN CERAMIC DIP CASE OUTLINE D7, CONFIGURATION 3 TOP VIEW • Latch-Up Free To > 5.0 x 1011 RAD(SI)/s

sem 3040

Abstract: sem 3040 ic
Contextual Info: f|ì HARRIS HS-82C08RH S E M I C O N D U C T O R Radiation Hardened 8-Bit Bus Transceiver December 1992 Pinouts Features 20 PIN CERAMIC DIP CASE OUTUNE D8, CONFIGURATION 3 • Radiation Hardened - Total Dose 1 x 10s RAD Si TOP VIEW - Latch-Up Im m une EPI-CM OS > 1 x 1012 RAD(Siys

Contextual Info: HS-6551RH Îü HARRIS S E M I C O N D U C T O R Radiation Hardened 256 x 4 CMOS RAM D ecem ber 1992 Features Pinouts • Functional Total Dose 2 x 104 RAD SI HS1-6551RH 22 PIN CERAMIC DIP CASE OUTLINE D7, CONFIGURATION 3 TOP VIEW • Latch-Up Free To > 5.0 x 1011 RAD(Sl)/s

Contextual Info: a HARRIS S E M I C O N D U C T O R H S - 6 • Total Dose 1 x 10s RAD SI • Latch-Up Free >1 x 1012 RAD (Siys 1 7 R H Radiation Hardened 2K X 8 CMOS PROM January 1994 Features 6 Pinouts 24 PIN BRAZE SEAL DIP CASE OUTLINE D3, CONFIGURATION 3 TOP VIEW • Field Programmable

ifu320

Abstract: fu320 IFR321 fr320
Contextual Info: IRFR320/321/322 IRFU320/321/322 HARRIS N-Channel Power MOSFETs Avalanche-Energy-Rated A u g u st 1991 Packages Features IR F U 3 2 0 /3 2 1 /3 2 2 T O -2 5 1 A A TOP VIEW • 2.6A and 3.1A, 350V and 400V • rDS on = 1 .8 0 fl and 2.5CI > SOURCE • Single Pulse Avalanche Energy Rated

F18N10CS

Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
Contextual Info: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl

Contextual Info: 2 « tt HS-65758RH HS-65759RH HARRIS S E M IC ON DU CTOR Radiation Hardened 32K x 8 SOI CMOS Static RAM PRELIMINARY July 1992 Features Pinouts • 0.8 Micron Radiation Hardened SOI CMOS - Total Dose 1 x 10s RAD Si - Transient Upset 1 x 1011 RAD (Siys

sidd

Abstract: SA2995 Harris top marking
Contextual Info: 33 fcKHffiSR HS-54C138RH Radiation Hardened 3-Line to 8-Line Decoder/Demultiplexer December 1992 Pinouts Features 16 PIN DIP CASE OUTLINE D2, CONFIGURATION 3 TOP VIEW • Radiation Hardened EPI-CMOS - Total Dose 1 x 10s RAD Si - Latch-Up Immune > 1 x 1012 RAD(Si)/s

Contextual Info: 33 HS-54C138RH December 1992 Features • Radiation Hardened EPI-CMOS - Total Dose 1 x 10s RAD Si - Latch-Up Immune > 1 x 1012 RAD(Si)/s • Multiple Input Enable for Easy Expansion • Single Power Supply +5V • Outputs Active Low • Low Standby Power (0.5mW Max at +5V)

Contextual Info: HS-26C31RH HARRIS S E M I C O N D U C T O R æ Radiation Hardened Quad Differential Line Driver March1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS -Total Dose Up to 300K RAD Si -Dose Rate Upset > 1x10* RAD/Sec (20nS Pulse) • Latchup Free

Contextual Info: ¡ f i H U S E M I C O N D U C T O R U A R R HS-6508RH IS Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Functional Total Dose 2 x 104 RAD Si HS1-6508RH 16 PIN CERAMIC DIP CASE OUTLINE D2, CONFIGURATION 3 TOP VIEW • Latch-Up Free To > 5.0 x 1011 RAD(Si)/s

HS508

Abstract: S8Y1
Contextual Info: HARRIS SEMICOND SECTOR m U ^ bSE T> Bi M302271 0 0 ^ 1 7 3 12T H H A S HS-548RH HS~549RH HARRIS l S E M I C O N D U C T O R 19 9 3 Single 8 /D ifferential 4 Channel CMOS Analog M ultiplexers with Active Overvoltage Protection Pinouts Features • This Circuit is Processed in Accordance to MIL-STD-883

Contextual Info: U HS-26C31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1 . 2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si) - Dose Rate Upset > 1x109 RAD/Sec (20ns Pulse) • Latchup Free

HS-26C31

Abstract: HS-26C31RH HS9-26C31RH-8 HS1-26C31RH-Q HS1-26C31RH-8 HS9-26C31RH-Q 26C31 CDFP4-F16 26C31 leakage CERAMIC FLATPACK 16
Contextual Info: HS-26C31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si - Dose Rate Upset > 1x109 RAD/Sec (20ns Pulse) • Latchup Free • EIA RS-422 Compatible Outputs (Except for IOS)

26C31

Abstract: Harris top marking
Contextual Info: HS-26C31RH Semiconductor Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS 16 Lead Ceramic Dual-in-Line Metal Seal Package SBDIP Mil-Std-1835 CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD(Si)

sta 1015

Contextual Info: HS-65C162RRH December 1992 Radiation Hardened 2048 x 8-Bit Asynchronous CMOS Static RAM Features • Radiation Hardened EPI-CMOS Pinouts 24 PIN SIDEBRAZED DIP CASE OUTUNE D3, CONFIGURATION 3 • Total Dose 2 x 105 RAD Si TOP VIEW • Transient Upset > 1 x 10 RAD(Si)/s