HARRIS TOP MARKING Search Results

21s07

Abstract: flip flap 450-001 9651
Contextual Info: DALLAS SEMICONDUCTOR APPROVED DOCUMENT 45–20000–001 ORIGINATOR DESCRIPTION REV. C PAGE 1 OF 12 ECN NUMBER DATE REV. Jim Walling Original Issue 14035 05/09/97 A Marzella Harris Add figure B2, delete label on top of box, Custome label, Insert bar code contents, and

Contextual Info: HS-6664RH HARRIS S E M I C O N D U C T O R Radiation Hardened 8K x 8 CMOS PROM August 1994 Features Pinouts 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW • 1.2 Micron Radiation Hardened Bulk CMOS • Total Dose 3 x 10s RAD Si

HS-3530RH

Contextual Info: fü HARRIS HS-3530RH S E M I C O N D U C T O R Low Power, Radiation Hardened Programmable Operational Amplifier April 1995 Pinout Features HS2-3530RH 8 PIN METAL CAN TOP VIEW • Radiation Environment - Neutron Fluence 0> 5 x 1012 n/cm2 (E > 10KeV) - Gamma Rate Ci) 1 x 109 RAD (Si)/s

Contextual Info: HS-6551RH Îü HARRIS S E M I C O N D U C T O R Radiation Hardened 256 x 4 CMOS RAM D ecem ber 1992 Features Pinouts • Functional Total Dose 2 x 104 RAD SI HS1-6551RH 22 PIN CERAMIC DIP CASE OUTLINE D7, CONFIGURATION 3 TOP VIEW • Latch-Up Free To > 5.0 x 1011 RAD(Sl)/s

Contextual Info: a HARRIS S E M I C O N D U C T O R H S - 6 • Total Dose 1 x 10s RAD SI • Latch-Up Free >1 x 1012 RAD (Siys 1 7 R H Radiation Hardened 2K X 8 CMOS PROM January 1994 Features 6 Pinouts 24 PIN BRAZE SEAL DIP CASE OUTLINE D3, CONFIGURATION 3 TOP VIEW • Field Programmable

F18N10CS

Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
Contextual Info: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl

sidd

Abstract: SA2995 Harris top marking
Contextual Info: 33 fcKHffiSR HS-54C138RH Radiation Hardened 3-Line to 8-Line Decoder/Demultiplexer December 1992 Pinouts Features 16 PIN DIP CASE OUTLINE D2, CONFIGURATION 3 TOP VIEW • Radiation Hardened EPI-CMOS - Total Dose 1 x 10s RAD Si - Latch-Up Immune > 1 x 1012 RAD(Si)/s

Contextual Info: HS-26C31RH HARRIS S E M I C O N D U C T O R æ Radiation Hardened Quad Differential Line Driver March1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS -Total Dose Up to 300K RAD Si -Dose Rate Upset > 1x10* RAD/Sec (20nS Pulse) • Latchup Free

HS508

Abstract: S8Y1
Contextual Info: HARRIS SEMICOND SECTOR m U ^ bSE T> Bi M302271 0 0 ^ 1 7 3 12T H H A S HS-548RH HS~549RH HARRIS l S E M I C O N D U C T O R 19 9 3 Single 8 /D ifferential 4 Channel CMOS Analog M ultiplexers with Active Overvoltage Protection Pinouts Features • This Circuit is Processed in Accordance to MIL-STD-883

Contextual Info: U HS-26C31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1 . 2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si) - Dose Rate Upset > 1x109 RAD/Sec (20ns Pulse) • Latchup Free

Contextual Info: HS-26CT31RH S MAfSSf? Radiation Hardened Quad Differential Line Driver March1995 Features Pinouts HS1-26CT31RH 16 LEAD CERAMIC SIDEBRAZE DIP CASE OUTUNE D2, CONFIGURATION C TOP VIEW • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si • Latchup Free

Contextual Info: æ HS-26C32RH HARRIS S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Receiver March 1995 Features • Pinouts 1.2 Micron Radiation Hardened CMOS HS1-26C32RH 16 LEAD CERAMIC SIDEBRAZE DIP CASE OUTLINE D2, CONFIGURATION 3 -Total Dose Up to 300K RAD Si

Contextual Info: HS-26CT31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver March 1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si • Latch up Free • EIA RS-422 Compatible Outputs (Except tor IOS) • TTL Compatible Inputs

26CT32RH

Contextual Info: HS-26CT32RH S Radiation Hardened Quad Differential Line Receiver March 1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS -Total Dose Up to 300K RAD Si HS1-26CT32RH 16 LEAD CERAMIC SIDEBRAZE DIP CASE OUTLINE D2, CONFIGURATION C TOP VIEW • Latchup Free

BED02

Abstract: C151C
Contextual Info: HS-82C12RH HARRIS SEMICONDUCTOR Radiation Hardened 8-Bit Input/Output Port December 1992 Features Pinouts • Radiation Hardened CMOS Process - Total Dose 1 x 10s RAD Si - Transient Upset > 1 x 10® RAD(Siys - Latch-Up Immune EPI-CMOS > 1 x 1012 RAD(Siys

26C31

Contextual Info: f f l H A R R HS-26C31RH I S S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features • Pinouts 1.2 Micron Radiation Hardened CMOS 16 Lead Ceramic Dual-in-Line Metal Seal Package SBDIP Mil-Std-1835 CDIP2-T16 TOP VIEW

Contextual Info: a HS-6664RH HARRIS SEMICONDUCTOR PRELIMINARY Radiation Hardened 8K x 8 CMOS PROM January 1994 Features Pinouts 1.2 Micron Radiation Hardened Bulk CMOS Total Dose 3 x 10s RAD Si Transient Output Upset >1 x 10 RAD (Siys Single Event Upset < 1 x 10*1° Errors/Bit-Day

IN4002

Contextual Info: HARRIS SEMICOND SECTOR 5flE » • M3DES71 DD4373M 421 « H A S , HS-302RH/883S, HS-303RH/883S HS-306RH/883S HS-307RH/883S HS-384RH/883S, HS-390RH/883S iB HARRIS SEMICONDUCTOR Features Description • This Circuit Is Processed in Accordance to Mll-Std- The HS-3XXRH/883S family of analog switches are mûriolithic

Contextual Info: fS Ì HS-6664RH H A F R F R IS S E M I C O N D U C T O R Radiation Hardened 8K X 8 CMOS PROM September 1995 Features Pinouts 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW • 1.2 Micron Radiation Hardened Bulk CMOS • Total Dose 3 x 105 RAD Si

TTL IC 7405 open collector

Abstract: HS-245RH
Contextual Info: HS-245RH fc J jQ k ¡ ¡ D E D IA S RADIATION HARDENED TRIPLE LINE TRANSMITTER HS-246RH, HS-249RH RADIATION HARDENED TRIPLE LINE RECEIVERS HS-248RH December 1992 RADIATION HARDENED TRIPLE PARTY-LINE RECEIVER Features Pinouts • Radiation Hardened Dl Processing

Contextual Info: HS-6617RH Radiation Hardened 2K X 8 CMOS PROM December 1994 Features • Total Dose 1 x 10s RAD SI • Latch-Up Free >1 x 1012 RAD (Siys Pinouts 24 PIN BRAZE SEAL DIP CASE OUTLINE D3, CONFIGURATION 3 TOP VIEW • Field Programmable 24] VDD A7 [ 7 • Functionally Equivalent to HM-6617

20v300

Abstract: harris varistor 14V275 20V275 14v320 harris varistors E75961
Contextual Info: [ /Title UltraMOV Series /Subject (High Surge Current Radial Lead Metal Oxide Varistors) /Autho r () /Keywords (Harris Corporation, Suppression Products, TVS, Transient Suppression, Protection, ESD, IEC, Radial Lead Varistors UltraMOV™ Series Data Sheet

Metal-Oxide Varistor Marking

Abstract: 47R16 430R16 harris varistors 275 1FT7 HARRIS Metal-Oxide Varistor Marking
Contextual Info: M3ÜSE71 ÜG3Ö2D7 Ö MbE D HARRIS SENICON] SECTOR I HAS RA Series HARRIS S E M I C O N D U C T O R t= w -z s Low-Profile Radial-Lead Metal-Oxide Varistors February 1992 Features • Recognized as ‘Transient Voltage Surge Suppressors", UL File # E75961 to Sfd. 1449

Contextual Info: 3 HS-65647RH Radiation Hardened December1992 8K x 8 SOS CMOS Static RAM Functional Diagram Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 10s RAD SI - Transient Upset >1 x 1011 RAD (Siys - Single Event Upset < 1 x 10'12 Errors/Bit-Day