SIDD Search Results

AN217

Abstract: 103E2 74F786 03624E-2 63e2
Contextual Info: Philips Semiconductors Application note Metastability tests for the 74F786 – 4-input asynchronous bus arbiter AN217 Authors: Charles Dike and Naseer Siddique in this study should be considered a measurement at the edge of the typical range for 74F786 parts.

Contextual Info: SiC “Super” Junction Transistors with Ultra-Fast < 15 ns Switching Capability Ranbir Singh, and Siddarth Sundaresan, GeneSiC Semiconductor, USA. ranbir@ieee.org Abstract 1200 V-Class Super-High Current Gain Transistors or SJTs developed by GeneSiC are

SiC BJT

Abstract: transistor 304
Contextual Info: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.

IXZ421DF12N100

Contextual Info: designfeature Siddarth Sundaresan, Director-Device Design & Fabrication, Michael Digangi, Chief Business Development Officer, and Ranbir Singh, President, GeneSiC Semiconductor, Inc. SiC “Super” Junction Transistors Offer Breakthrough High Temp Performance

MOS Controlled Thyristor

Abstract: thyristor lifetime
Contextual Info: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT

Contextual Info: 12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes Siddarth Sundaresana, Charles Sturdevant, Madhuri Marripelly, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author

Contextual Info: 6 D RA WI NG THIS MADE IN D RA WI NG THIRD IS A NGL E ONRUBLI S H E D , COPYRIGHT 5 PROJECTION RELEASED 19 BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. D D STAMPED, 5-2 IN KNEAR S I D E N24308D4-12F INK STANDDD, DAD D: SIDD SDD

103e2

Abstract: AN217 03624E-2 74F786
Contextual Info: INTEGRATED CIRCUITS AN217 Metastability tests for the 74F786 – a 4-input asynchronous bus arbiter 1988 Jul 18 Philips Semiconductors Philips Semiconductors Application note Metastability tests for the 74F786 – 4-input asynchronous bus arbiter AN217 Authors: Charles Dike and Naseer Siddique

Contextual Info: Mater. Res. Soc. Symp. Proc. Vol. 1433 2012 Materials Research Society DOI: 10.1557/opl.2012.1032 Stability of Electrical Characteristics of SiC “Super” Junction Transistors under LongTerm DC and Pulsed Operation at various Temperatures Siddarth G. Sundaresan, Aye-Mya Soe, and Ranbir Singh

adaptive FILTER implementation in c language

Abstract: array antenna SW7432 block diagram of of TMS320C54X TMS320C541 china phone BLOCK diagram phillips Antenna SPRA532 adaptive antenna
Contextual Info: Application Report SPRA532 Implementation of an Adaptive Antenna Array Using the TMS320C541 Kim Phillips, Zhong Hu, Keith Blankenship, Zeeshan Siddiqi, Neiyer Correal Virginia Polytechnic Institute Abstract Adaptive antenna arrays are expected to play a key role in meeting the demands of the wireless

anode gate thyristor

Contextual Info: Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Siddarth G. Sundaresana*, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author

Contextual Info: SILICON CARBIDE “SUPER” JUNCTION TRANSISTORS OPERATING AT 500 °C Siddarth Sundaresan1, Ranbir Singh1, R. Wayne Johnson2 1 GeneSiC Semiconductor Inc. Dulles, VA 20166 2 Auburn University, Auburn, AL 36849 email:siddarth.sundaresan@genesicsemi.com, phone: 703 996-8200

Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 10, OCTOBER 2012 2795 Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs Siddarth G. Sundaresan, Aye-Mya Soe, Stoyan Jeliazkov, and Ranbir Singh, Member, IEEE Abstract—The stability of the electrical characteristics of SiC

Contextual Info: 15 kV SiC PiN diodes achieve 95% of avalanche limit and stable long-term operation Siddarth Sundaresan, Madhuri Marripelly, Svetlana Arshavsky, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20166, USA email: siddarth.sundaresan@genesicsemi.com Abstract— This paper reports on ultra-high voltage, >15 kV SiC

SPRUEV0

Abstract: IH264 DM36 IH264VENC DM365 TMS320DM365 SPRAB83
Contextual Info: Application Report SPRAB83 – December 2009 Smart Codec Features in TMS320DM365 Naveen Srinivasamurthy, Mahant Siddaramanna and Ritesh Rajore . MMCodecs ABSTRACT You will significantly enhance video encoder quality by incorporating external input/feedback from the

Contextual Info: Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's June 15-19, 2014 Waikoloa, Hawaii Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers Siddarth Sundaresan, Stoyan Jeliazkov, Hany Issa, Brian Grummel, Ranbir Singh

Contextual Info: Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation Siddarth Sundaresan, Brian Grummel and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Place, Suite 155, Dulles VA 20166, U.S.A. ABSTRACT Electrical performance and reliability of SiC Junction Transistors SJTs and Schottky

Contextual Info: 1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications Ranbir Singh, Siddarth Sundaresan, Eric Lieser and Michael Digangi GeneSiC Semiconductor, Inc. Dulles, VA 20166, USA. ranbir@ieee.org

Contextual Info: 1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with low junction capacitance Ranbir Singh* and Siddarth Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place; Suite 155 Dulles, VA. USA *Ranbir@ieee.org Abstract— Electrical Characteristics of Industry’s first

Contextual Info: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA sid@genesicsemi.com Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.

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29152 WT

Abstract: MIC29502 ADJ
Contextual Info: Micrel, Inc. MIC29150/29300/29500/29750 MIC29150/29300/29500/29750 High-Current Low-Dropout Regulators General Description Features The MIC29150/29300/29500/29750 are high current, high accuracy, low-dropout voltage regulators. Using Micrel's proprietary Super βeta PNP process with a PNP pass element, these regulators feature 300mV to 370mV full load

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data KE02 Sub-Family Data Sheet Document Number MKE02P64M20SF0 Rev 3, 07/2013 MKE02P64M20SF0 Supports the following: MKE02Z16VLC2 R , MKE02Z32VLC2(R), MKE02Z64VLC2(R), MKE02Z16VLD2(R), MKE02Z32VLD2(R), MKE02Z64VLD2(R),

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data KE02 Sub-Family Document Number MKE02P64M20SF0 Rev 3, 07/2013 MKE02P64M20SF0 Supports the following: MKE02Z16VLC2 R , MKE02Z32VLC2(R), MKE02Z64VLC2(R), MKE02Z16VLD2(R), MKE02Z32VLD2(R), MKE02Z64VLD2(R), MKE02Z32VLH2(R),