HARDNESS Search Results

ASTM D374

Abstract: ASTM D2240, D412 ASTM D412 ASTM d412 ASTM D2240 D2240 ASTM d792 ASTM-D-257 ASTM-D-374
Contextual Info: TG2030 Ultra Soft Thermal Conductive Pad Features Superior thermal conductivity Highly compressible Naturally tacky Low Shore OO hardness Low oil bleed Electrically insulating Applications Electronic components: IC - CPU - MOS LED - M/B - P/S - Heat Sink LCD-TV - Notebook PC - PC Telecom Device - Wireless Hub.etc.

4031

Abstract: OP27RP
Contextual Info: Preliminary SEi - Radiation Hardened OP27RP Low Noise, Precision Operational Amplifier Features: • RAD-PAK technology hardened against natural space radiation • Total dose hardness typ 100 krad Si ; dependent upon orbit • Package: -8 pin RAD-PAK flat pack

JAN-38510

Abstract: U105B
Contextual Info: Tem ic DG186/187/188 Se mi c o n d u c t o r s High-Speed Drivers with SPDT JFET Switches Features Benefits Applications • Constant On-Resistance Over Entire Analog Range • Low Leakage • Low Crosstalk • Rad Hardness • • • • • • • •

M83528

Abstract: WR340 flange dimensions OSD-6411A wr 2300 flange waveguide Waveguide Gaskets 20-03-3731-1212 CMR-137 WR137 gasket dimensions RG-106 wr 2300 waveguide flange
Contextual Info: CONDUCTIVE ELASTOMERS Waveguide Gaskets Waveguide Gaskets CHO-SEAL CHO-SEAL 1212 1239 SPECIFICATIONS Type Ref: MIL-G-83528 Volume Resistivity (ohm-cm, max) as supplied (without pressure-sensitive adhesive) K G 0.005 0.007 Hardness (Shore A ±5) 80 80 Specific Gravity (±0.25)

n38510

Contextual Info: DG186/187/188 High-Speed Drivers with SPDT JFET Switches Features Benefits Applications • Constant On-Resistance Over Entire Analog Range • Low Leakage • Low Crosstalk • Rad Hardness • • • • • • • • • • Low Distortion Eliminates Large Signal Errors

capacitive touch screens

Abstract: capacitive touch controller IC Touch Screens optical touch controller IC MGG700BI07 MGG1010AU12 touch sensor i2c MGG1010AI06
Contextual Info: w Ne Projective Capacitive Touch Screens Product Features • G/G Glass Glass Technology • Complete Sensor Module Solution Glass Sensor with Controller • 2 Point Gesturing • Front Surface Glass Hardness 7H 5 Mosh • Position Accuracy ± 2.5mm Per Windows 7 Spec

Contextual Info: OP490 Quad Low Voltage Micropower Operational Amplifier Logic Diagram One Amplifier DESCRIPTION: • RAD-PAK technology-hardened against natural space • radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Package: - 16 pin Rad-Pak® flat package

HX6408

Contextual Info: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)

Contextual Info: 4551072 b3E D Honeywell ODQIQIM bS^ • H 0 N 3 HONEYldELL/S S E C Advance Information 256K X 16 RADIATION-TOLERANT SRAM HC81640 FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Detects and Corrects All Single and Double Bit Errors Automatically

Contextual Info: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power

Contextual Info: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly

Contextual Info: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process

Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

79LV0832

Contextual Info: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects

UC1843x

Abstract: transistor 2N2222 SMD configuration 25A45 PWM5031 PWM5031-7 5v to 20v pwm amplifier 40khz folded cascode current mirror op amp
Contextual Info: Standard Products PWM5031 RadHard High Speed PWM Controller www.aeroflex.com/Power August 2, 2005 y r a n i il m e r P FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Hardness: - Total Dose 1MRad Si - Single Event Upset (SEU) 100MeV-cm2 /mg

OP400RP

Contextual Info: Preliminary SEi - Radiation-Hardened OP400RP Quad Low-Offset, Low-Power Operational Amplifier Features: •RAD-PAK technology-hardened against natural space radiation •Total dose hardness typical >100 krad Si ; dependent upon orbit •Package: - 14 pin RAD-PAK® flat package

Microcircuit, Linear, Quad Comparator

Abstract: 139RP
Contextual Info: SEi - Radiation Hardened 139RP Quad Comparators, Low Offset Voltage S c h e m a tic D ia g ra m Features: • High precision comparators • RAD-PAK technology-hardened against natural space radiation • Total dose hardness typical 100 krad Si ; dependent upon orbit

be 500y-in

Abstract: 308C
Contextual Info: d a t a V. s h e e t Typo: UFFY 1,5 mm2. Highly flexible stranded hookup wire Conductor plain copper, stranded Copper construction: 392x0*07 mm Core isolation: soft PVC-mlxture Diameter of core: approx. 3,50 +/- 0,15 mrrt Shore hardness: 00 H- 3 Insulating resistance:

low igss

Contextual Info: PRELIMINARY MOSFET A ICO SEM 330 SCF Radiation Hardness Assurance • 400 Volt  3.0 Amp  1.0 Ω SCF 330 N-Channel Power MOSFET DESCRIPTION Semicoa’s Radiation Hardened MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications.

J24118BS-2

Abstract: J241
Contextual Info: 1 2 3 4 5 6 7 8 SPECIFICATIONS Voltage Rating: Current Rating: Material: Plating: Insulation: Insulation Resistance: Thickness: Hardness: Applicable Wire: Withstanding: Temperature Range: A B 9 AC, DC, 250V AC, DC, 3A Brass Tin 40u” min. 1.7 Max. 1000MΩ min.

Contextual Info: Honeywell Military & Space Products HX6656 32K x 8 ROM—SOI FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Silicon on Insulator SOI 0.75 nm Process (Leff = 0.6 |iim) • Read Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106ra d(S i02)

Contextual Info: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)

HR2340

Abstract: sram pull down honeywell memory sram
Contextual Info: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec