Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HAMAMATSU PIN TO5 Search Results

    HAMAMATSU PIN TO5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-002.5
    		Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-002.5 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft PDF
    CS-DSDMDB09MM-025
    		Amphenol Cables on Demand Amphenol CS-DSDMDB09MM-025 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft PDF
    CS-DSDMDB15MM-005
    		Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-005 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 5ft PDF
    CS-DSDMDB25MF-50
    		Amphenol Cables on Demand Amphenol CS-DSDMDB25MF-50 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Female 50ft PDF
    CS-DSDMDB37MF-015
    		Amphenol Cables on Demand Amphenol CS-DSDMDB37MF-015 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Female 15ft PDF

    HAMAMATSU PIN TO5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E04 PDF

    photodiode InGaAs NEP

    Abstract: G8370 G8370-01 G8370-02 G8370-03 G8370-05
    Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E03 photodiode InGaAs NEP G8370-01 G8370-02 G8370-03 G8370-05 PDF

    G8370-01

    Abstract: G8370 G8370-02 G8370-03 G8370-05
    Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E04 2006DN G8370-01 G8370-02 G8370-03 G8370-05 PDF

    G8370-01

    Abstract: G8370 G8370-02 G8370-03 G8370-05
    Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E01 G8370-01 G8370-02 G8370-03 G8370-05 PDF

    Contextual Info: InGaAs PIN photodiodes G12180 series Photosensitive area from ϕ0.3 mm to ϕ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm to ϕ5 mm.


    Original     		G12180 B1201, KIRD1121E02 PDF

    G8370-01

    Abstract: G8370 G8370-02 G8370-03 G8370-05
    Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E03 G8370-01 G8370-02 G8370-03 G8370-05 PDF

    Contextual Info: InGaAs PIN photodiodes G12180 series Photosensitive area from φ0.3 mm to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from φ0.3 mm to φ5 mm.


    Original     		G12180 KIRD1121E01 PDF

    G8370-81

    Abstract: G8370-82 G8370-83 G8370-85
    Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E04 G8370-81 G8370-82 G8370-83 G8370-85 PDF

    Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 SE-171 KIRD1064E04 PDF

    Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 SE-171 KIRD1064E03 PDF

    Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E02 PDF

    Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E03 PDF

    Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL Polarization Dependence Loss at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E01 PDF

    S1190 hamamatsu

    Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
    Contextual Info: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K


    OCR Scan     		42STbGT S1188-02 S1188-06 S2216-01 S2216-02 S1190 S1190-01 S1190-03 S1190-04 S1223 S1190 hamamatsu S2856 S2216 02 S2164-01 PDF

    S1722-01

    Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
    Contextual Info: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR


    OCR Scan     		S1721 S1722 S1722-01 S1722-02 S1863 S1863-01 S1723-04 S1723-08 S1723-06 S1723-05 S-1721 G1117 si7202 S2164-01 PDF

    Contextual Info: HAMAMATSU LOW PULSE NOISE PIN SILICON PHOTODIODE S3279 TENTATIVE DATA Feb.1990 FOR HIGH PRECISION PHOTOMETRIC SYSTEMS VERY LOW PULSE NOISE, FAST TIME RESPONSE, WIDE SPECTRAL RESPONSE FEATURES • Very low pulse noise: less th an 1 p u lse /h • Fast time response: tr=1.5ns VR=15V


    OCR Scan     		S3279 PF2620B2F PDF

    S3932-01

    Abstract: s3979 S3931-01 S1869
    Contextual Info: HAMAMATSU One-dimensional PSDS Position Sensitive Detectors S3979/S3931, S3932 Series For precision displacement measurement Active areas : 1 X 3 mm, 1 X 6 mm, and 1 X 1 2 mm FEATURES • Superior position detection ability • High reliability • Easy to use 4-pin small ceramic package


    OCR Scan     		S3979/S3931, S3932 S3931, S3932) 18l-367-3560, 44J181 KPSD1002E02 S3932-01 s3979 S3931-01 S1869 PDF

    S3279

    Abstract: CR-300 HPF262082F
    Contextual Info: HAMAMATSU TENTATIVE DATA Feb.1990 LOW PULSE NOISE PIN SILICON PHOTODIODE S3279 FOR HIGH PRECISION PHOTOMETRIC SYSTEMS VERY LOW PULSE NOISE, FAST TIME RESPONSE, WIDE SPECTRAL RESPONSE FEATURES • Very low pulse noise: less th an 1 p u lse /h • F ast time response: tr=1.5ns VR=15V


    OCR Scan     		S3279 F-91550 HPF262082F S-194 CR-300 S3279 PDF

    Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has


    Original     		S11499 S11499-01) SE-171 KPIN1082E01 PDF

    Photodiodes

    Abstract: yag Electrical circuit S11499 TO-8 Package
    Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has


    Original     		S11499 S11499-01) SE-171 KPIN1082E01 Photodiodes yag Electrical circuit TO-8 Package PDF

    Contextual Info: I R-enhanced Si PI N photodiodes S11499 series Large area, enhanced near I R sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has


    Original     		S11499 SE-171 KPIN1082E01 PDF

    R7600U-300

    Abstract: MOST150 S11518
    Contextual Info: NEWS 02 2010 SYSTEM PRODUCTS PAGE 29 2.8M Scientific CMOS board-level camera SOLID STATE PRODUCTS PAGE 15 New InGaAs PIN photodiodes ELECTRON TUBE PRODUCTS New MCP assemblies PAGE 27 SYSTEMS PRODUCTS Quantaurus-QY PAGE 30 Highlights SOLID STATE PRODUCTS PAGE 07


    Original     		G11608 G11608-256DA G11608-512DA DE128228814 R7600U-300 MOST150 S11518 PDF

    Contextual Info: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 m to 1.7 m. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 m to 1.7 m, the G10899 series has sensitivity extending


    Original     		G10899 G10899-003K G10899-005K G1089: SE-171 KIRD1109E02 PDF

    InGaAs PIN photodiode Wavelength .6 to 1.7

    Contextual Info: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending


    Original     		G10899 SE-171 KIRD1109E01 InGaAs PIN photodiode Wavelength .6 to 1.7 PDF