G12180 Search Results
G12180 Price and Stock
NOSHOK Inc PT30-300PSIG-1-2-1-80High Performance Fixed Range Pre |
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PT30-300PSIG-1-2-1-80 | Bulk | 8 | 1 |
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NOSHOK Inc PT30-500PSIG-1-2-1-80High Performance Fixed Range Pre |
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PT30-500PSIG-1-2-1-80 | Bulk | 8 | 1 |
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NOSHOK Inc PT30-1000PSIG-1-2-1-80High Performance Fixed Range Pre |
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PT30-1000PSIG-1-2-1-80 | Ammo Pack | 8 | 1 |
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NOSHOK Inc PT30-2000PSIG-1-2-1-80High Performance Fixed Range Pre |
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NOSHOK Inc PT30-300PSIG-1-2-1-80-CCHigh Performance Fixed Range Pre |
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G12180 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1/SAA 1014Contextual Info: InGaAs PINフォトダイオード G12180シリーズ ϕ0.3 mmからϕ5 mmまでさまざまな受光面サイズを用意 InGaAs PINフォトダイオードは並列抵抗が大きくノイズが小さいという特長をもっています。ϕ0.3 mmからϕ5 mmま |
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G12180ã G12180-210A G12180-220A /-230A/-250A KIRDA0247JA KIRD1121J06 1/SAA 1014 | |
Contextual Info: InGaAs PIN photodiodes G12180 series Photosensitive area from ϕ0.3 mm to ϕ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm to ϕ5 mm. |
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G12180 B1201, KIRD1121E02 | |
Contextual Info: InGaAs PIN photodiodes G12180 series Photosensitive area from φ0.3 mm to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from φ0.3 mm to φ5 mm. |
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G12180 KIRD1121E01 | |
Contextual Info: Photosensor amplifier C8366 series Current-to-voltage conversion amplifier C8366: for high-speed Si PIN photodiode C8366-01: for high-speed InGaAs PIN photodiode Features Applications Wide band DC to 100 MHz Typ. (-3 dB; varies depending on the photodiode used) |
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C8366 C8366: C8366-01: C8366 B1201, KACC1067E06 | |
Contextual Info: セレクションガイド 2014.12 赤外線検出素子 赤 外 域 の さま ざ ま な 感 度 波 長 範 囲 に 対 応 INFRARED DETECTOR 赤外線検出素子 赤外線検出素子は計測・分析・工業・通信・農業・医 学・理 化 学・天 文 学・宇 宙 などの 分 野に幅 広く利 用 |
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Contextual Info: プリアンプ付赤外検出モジュール 電子冷却型 取り扱いが容易なアンプ一体型モジュール 直流電源を接続するだけで赤外線を検出できるアンプ一体型のモジュールです。InGaAs・PbS・PbSe・InSbの各素子について |
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A4372-03: P4638, P4639, P4631-03 A4372-07: C12485-210, KIRD1036J20 | |
Infrared detectors
Abstract: dark detector application ,uses and working
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Contextual Info: フォトセンサアンプ C8366シリーズ 電流-電圧変換アンプ C8366: 高速Si PINフォトダイオード用 C8366-01: 高速InGaAs PINフォトダイオード用 特長 用途 広帯域 DC~100 MHz typ. (-3 dB, フォトダイオ-ドの性能に |
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C8366ã C8366: C8366-01: O-8/TO-5/TO-18ç AWG24) KACCC0755JA E2573 KACCA0334JA | |
Selection guideContextual Info: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high |
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KIRD0005E02 Selection guide | |
Contextual Info: セレクションガイド 2015.6 InGaAs フォトダイオード 低 ノイ ズ で 優 れ た 周 波 数 特 性 の 近 赤 外 線 検 出 素 子 InGaAs PHOTODIODE 当社独自の化合物半導体プロセス技術を生かしたInGaAsフォトダイオードは |
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Selection guide
Abstract: Infrared detectors P13243-011MA
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KIRD0001E08 Selection guide Infrared detectors P13243-011MA |