HALL EFFECT 5VDC Search Results
HALL EFFECT 5VDC Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GC331AD7LQ103KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC331CD7LP683KX19L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC332QD7LP104KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC355DD7LP684KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GR331AD7LP333KW01D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose |
HALL EFFECT 5VDC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Technologies GmbH & Co. KG CYTY108A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY108A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage |
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CYTY108A CYTY108A 40DERING 10sec 300g/30sec 200pF, D-85464 | |
Contextual Info: Technologies GmbH & Co. KG CYTY302B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY302B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage |
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CYTY302B CYTY302B 40LDERING 10sec 300g/30sec 200pF, D-85464 | |
Contextual Info: Technologies GmbH & Co. KG CYTY300B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY300B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage |
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CYTY300B CYTY300B D-85464 | |
Contextual Info: Technologies GmbH & Co. KG CYTY322B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY322B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage |
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CYTY322B CYTY322B 40LDERING 10sec 300g/30sec 200pF, D-85464 | |
CYSH12AFContextual Info: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It |
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CYSH12AF CYSH12AF CYTY101A. 10sec 300g/30sec 200pF, D-85464 | |
CTG-102EES
Abstract: CTG-252FSX5 CTG-152EESX5 CTG-252 PS-4753 CTG4 ctg-152Hs
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10Vdc CTG-102EES CTG-252FSX5 CTG-152EESX5 CTG-252 PS-4753 CTG4 ctg-152Hs | |
AIR FLOW DETECTOR LM339
Abstract: 2505 hall ic 249-4700 lm339 sensor 1N4004 2N2222A 2N2905 2N4444 LM124 LM339
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304-267
Abstract: 2N4444 equivalent hall effect 5vdc rs 304-267 RS 2n4444 transistor 2N4444 DC MOTOR DRIVE WITH LM339 307-446 2N2222A LM124
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AIR FLOW DETECTOR LM339
Abstract: 304-267 hall effect 5vdc p2k7 vane air flow sensor vane air flow sensor automotive 2N444 Hall sensor LM339 thyristor mtg 100A
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hall effect 5vdc
Abstract: 249-4700 RS Components 304-267 "hall effect" 18 612 2505 hall ic 2N4444 equivalent 1N4004 2N2222A 2N2905 LM124
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CYSJ362AContextual Info: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology. |
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CYSJ362A THS119, KSY14 KSY44 D-85464 | |
J1939Contextual Info: MS series Mid-size Hall effect joysticks The MS Series joystick is a contactless, Hall effect controller developed for demanding operator control applications requiring a rugged, yet compact hand-operated positioning device. Available with several ergonomic multi-axes |
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J1939 30VDC 5-30VDC | |
gaussmeter probe
Abstract: PSRI STB1X-0201 gaussmeter hall effect 5vdc
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w/5170) STB1X-0201 MOS51-3204 YA-111 110VAC 220VAC gaussmeter probe PSRI gaussmeter hall effect 5vdc | |
CYTHS124Contextual Info: ChenYang Technologies GmbH & Co. KG CYTHS124 GaAs HALL-EFFECT ELEMENTS CYTHS124 Hall-effect element is a ion-implanted magnetic field sensor made of mono-crystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology. It can |
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CYTHS124 D-85464 | |
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joystick hall
Abstract: J1939 cable DEUTSCH DT04
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J1939 30VDC 5-30VDC joystick hall J1939 cable DEUTSCH DT04 | |
Contextual Info: HF series Hall effect joysticks an APEM Group Company The HF joystick is a contactless, multi-axes controller providing long life finger positioning control. Featuring non-contact Hall effect technology while utilizing minimal mounting depth, the HF joystick is designed for |
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30VDC 5-30VDC | |
DEUTSCH DT04
Abstract: DT04-6P DT04-3P 4 pin hall throttle sensor AMP 120 pin connector Metri-Pack 150.2 deutsch 6 pin connector model AMP Superseal 1.5 4 pin dt06-3s 282087-1
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DT04-6P DT04-3P DT06-6S DT06-3S DEUTSCH DT04 4 pin hall throttle sensor AMP 120 pin connector Metri-Pack 150.2 deutsch 6 pin connector model AMP Superseal 1.5 4 pin 282087-1 | |
APEM HFX Series
Abstract: HFX Joystick an 132 hall sensor
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30VDC 5-30VDC APEM HFX Series HFX Joystick an 132 hall sensor | |
DEUTSCH DT04
Abstract: Metri-Pack 150.2 tyco 282105-1 4 pin hall throttle sensor 12162182 DT04-6P AMP Superseal 1.5 3 pin AMP Superseal 1.5 AMP Superseal 1.5 4 pin AMP Superseal 1.5 2 pin
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DT04-6P DT04-3P DT06-6S DT06-3S DEUTSCH DT04 Metri-Pack 150.2 tyco 282105-1 4 pin hall throttle sensor 12162182 AMP Superseal 1.5 3 pin AMP Superseal 1.5 AMP Superseal 1.5 4 pin AMP Superseal 1.5 2 pin | |
Thumbwheel switch linear single
Abstract: hall effect 5vdc J1455 14Hz J1113-22 life electronics sae J1113-22 IP68S MIL-810F switch THUMBWHEEL
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CY-P15A
Abstract: hall sensor P15A hall sensor sot143
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CY-P15A CY-P15A 000V/AT) OT-143 D-85464 hall sensor P15A hall sensor sot143 | |
Contextual Info: AC/DC Hall Effect Current Transducer DIN RAIL / PANEL MOUNT, TRACING OUTPUT The CR5400 Series, AC/DC Hall Effect Current Transducers, are designed to provide a bipolar output that proportionally reflects traces the waveform of the input current. These devices are specifically targeted to be used in applications |
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CR5400 CR5410 CR5411 CRPS24VDC | |
304-267
Abstract: hall effect 5vdc hall effect vane sensor E18613 DC MOTOR DRIVE WITH LM339 lm339 motor control magnetic position sensor RS Components 304-267 magnetic sensor 21 L 307-446
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E18613 24Vdc 304-267 hall effect 5vdc hall effect vane sensor E18613 DC MOTOR DRIVE WITH LM339 lm339 motor control magnetic position sensor RS Components 304-267 magnetic sensor 21 L 307-446 | |
CYSJ106CContextual Info: ChenYang Technologies GmbH & Co. KG CYSJ106C GaAs HALL-EFFECT ELEMENTS CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output. |
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CYSJ106C D-85464 |