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CYTHS124 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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CYTHS124Contextual Info: ChenYang Technologies GmbH & Co. KG CYTHS124 GaAs HALL-EFFECT ELEMENTS CYTHS124 Hall-effect element is a ion-implanted magnetic field sensor made of mono-crystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology. It can |
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CYTHS124 D-85464 | |
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Contextual Info: ChenYang Technologies GmbH & Co. KG CYTHS124 GaAs HALL-EFFECT ELEMENTS CYTHS124 Hall-effect element is a ion-implanted magnetic field sensor made of mono-crystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology. It can |
Original |
CYTHS124 D-85464 |