CYTY108A Search Results
CYTY108A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Technologies GmbH & Co. KG CYTY108A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY108A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage |
Original |
cyty108a10sec300g/30sec200pf+1 | |
|
Contextual Info: Technologies GmbH & Co. KG CYTY108A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY108A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage |
Original |
cyty108a40dering10sec300g/30sec+2 | |
|
Contextual Info: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into |
Original |
cyty108acyty320cyty300b-cscyty211+1 | |
|
Contextual Info: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into |
Original |
rancyty108acyty320cyty108acyty300b-cs+2 |