KSY44 Search Results

Hall Siemens

Abstract: Inductive current sensor of measurement KSY44 Siemens Hall 175 hall sensor Hall sensors Siemens AF03 4 pin hall sensor CIRCUIT BREAKER siemens hall 4 pins
Contextual Info: SIEMENS KSY44 Hall Sensor Preliminary Data Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component Package thickness 0.7 mm

Contextual Info: SIEMENS KSY44 Hall Sensor Preliminary Data Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component Package thickness 0.7 mm

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: SIEMENS KSY 44 GaAs-Hall Effect Sensor Preliminary Data Features High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component Package thickness 0.7 mm

Contextual Info: Alphanumeric Type Index SIEMENS Type Ordering Code BH 201 Page Q68000-A8759- F261 143 BH 701 Q68000-A8760- F261 156 BH 704 Q68000-A8761-F261 159 BH 705 Q68000-A8762-F261 162 BH-900 Series on request 164 FH 301-20 Q68000-A8764- F261 146 FH 301-40 Q68000-A8765-F261

78o5

Abstract: KSY44 KTY 20-5 25L90 KPY 4 KTY 23-5 KTY 11-6 KSY63 BH-705 KTY13-51
Contextual Info: Halbleiter-Sensoren Semiconductor Sensors Silizium-Temperatur-Sensoren Silicon Temperature Sensors T yp B a s ic R é s is ta n c e 2 5 °C ^rnax ( 2 5 “O T h e rm a l tim e c o n s ta n t 0 - 6 3 % T yp e il mA in still a ir KTY 102> KTY 10-5 KTY 10-6

Q62902-B146

Abstract: gh 312 SBV 604 Q65312-L100-U KSY13 SBV613 Q65310-L100-U75 BH7014
Contextual Info: Halbleiter-Sensoren Semiconductor Sensors Feldplatten-Potentiometer ohne Verstärker Typ Type FP 312 L 100 MR Potentiometer Without Amplifier Hot Jt Vout %H n Grad/deg Ft % Ta °C Ordering Code Bild Fig. 8 850 40 75 2.5 - 2 5 . +70 Q65312-L100-U 9 Feldplatten-Potentiometer mit Verstärker

kty 10-9

Abstract: KTY 10-8 KSY10 FP 310 L 100-75 KSY44 KSY13 FP 210-D-250-22 254 kpy 1 KPY 4 KSY14
Contextual Info: Semiconductor Sensors Halbleiter-Sensoren Outline Drawings ¡n mm Maßbilder (in mm) FP 412 L 100 FP 412 D 250 Figure 2 FP 210 D 250-22 FP 210 L 100-22 Figure 1 Section A - A ^ P u n c h in g —points (0 .4 3 ) (» 0 . 8 ) 1 1 0. 0 4 0.1 1 3 .5 * J E S M c ]

lg 6154

Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
Contextual Info: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp

CYSJ362A

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ302A GaAs HALL-EFFECT ELEMENTS CYSJ302A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ302C GaAs HALL-EFFECT ELEMENTS CYSJ302C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

SFH 255 FA

Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
Contextual Info: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite

GPX06851

Abstract: monocrystalline u value 4 pin hall sensor Hall sensors Siemens Hall Siemens R20 marking hall 4 pins hall marking code 6 siemens magnetic sensors ksy44 Q62705-K265
Contextual Info: SIEMENS Hall Sensor KSY 44 Preliminary Data Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component

Contextual Info: ,m— • Infineon te c h n o lo g ie s Hall Sensor KSY 44 Version 2.0 Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component

Contextual Info: SIEMENS Hall Sensor KSY 44 Preliminary Data Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component