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3 phase ac sinewave phase inverter single ic

Abstract: U5J diode
Contextual Info: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One

MG50H2YS1

Contextual Info: MG50H2YS1 GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance : tf= 1 . 0/is Max. . High Speed trr = 0 . 5 y s ( M a x .) . Enhancement-Mode . Includes a Complete Half Bridge in one

74LS299 APPLICATIONS

Abstract: 74ls74 timing setup hold pin diagram and block diagram of 74ls74 ANSI32
Contextual Info: TMS320SA32 32 KBIT/S ADPCM TRANSCODER NOVEMBER 1986 N PACKAGE ANSI 32 kbit/s ADPCM Compatible TOP VIEW CCITT G.721 32 kbit/s ADPCM Compatible Half-Duplex Transcoder Operation Transmit/Receive Selection Option /t-Law/A-Law PCM Selection Option NC£ 1^ 4 0 □

mg75n2ys

Abstract: LTA 703 S MG75N2YS1 MG75N2 MG75N2Y
Contextual Info: MG75N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in iran MOTOR CONTROL APPLICATIONS. High Input Impedance tf=l.O u s Max. High Speed trr=0-5|Js(Max. ) . Enahncement-Mode . Includes a Complete Half Bride in One Package.

Contextual Info: TOSHIBA MG90V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG90V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete Half Bridge in One

Contextual Info: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode

ksy 11

Contextual Info: y UC1875/6/7/8 UC2875/6/7/8 UC3875/6/7/8 UNITRODE Phase Shift Resonant Controller FEATURES DESCRIPTION • Zero to 100% Duty Cycle Control • Programmable Output Turn-On Delay The UC1875 family of integrated circuits implements control of a bridge power stage by phase-shifting the switching of one half-bridge with respect

microstep drive STEPPER MOTOR

Abstract: 1045V "Stepper Drive" UC3770
Contextual Info: Motor Controls Stopper Motors UC3717A Stepper Motor Drive Circuit • Improved version of industry standard • Full step, half-step and micro-step capability • Output currents up to 1.2A • Supply voltage 10-45V • Built-in fast recovery Schottky commutating diodes

DACC

Contextual Info: TLV5621E LOW-POWER QUADRUPLE 8-BIT DIGITAL-TO-ANALOG CONVERTER _ • • • • • S L A S 1 3 8 -APRIL 1996 2.7-V to 5.5-V Single-Supply Operation • Low Power Consumption Three 8-Bit Voltage Output DACs • Half-Buffered Output • Power-Down Mode

Contextual Info: SN74ACT7881 1024 x 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY SCAS227C - FEBRUARY 1993 - REVISED FEBRUARY 1996 • Member of the Texas Instruments Wldebus Family • Independent Asynchronous Inputs and Outputs • Input-Ready, Output-Ready, and Half-Full Flags

Contextual Info: TOSHIBA MG90V2YS40 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG90V2YS40 HIGH P O W ER SW ITCHING APPLICATIONS U n it in mm M O TO R CONTROL APPLICATIONS 4-FAST-ON-TAB #110 The Electrodes; are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

ic 393

Contextual Info: TOSHIBA MG150J1JS50 MG1 50J1JS50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT HIGH P O W ER SWITCHING APPLICATIONS. U nit in mm M O TO R CONTROL APPLICATIONS. 2 - ¿5 .« ± 0 .3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

TPD7200F

Contextual Info: TO SHIBA TPD7200F TENTATIVE TOSHIBA INTELLIGENT POWER DEVICE TPD7200F SILICON MONOLITHIC POWER INTEGRATED CIRCUIT MOS GATE DRIVER FOR HALF BRIDGE CIRCUITS TPD7200F is a MOS gate driver for half bridge circuit, used the level shift system, manufactured by the high

50J2Y

Abstract: 50J2YS50
Contextual Info: T O SH IB A MG150J2YS50 MG1 50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - f S S A ± 0 .3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

MG150H2YS1

Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG150H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0us Max. trr=0.5us (Max.) Low Saturation Voltage : VcE(Sat)=5.0V(Max,ï Enhancement-Mode Includes a Complete Half Bridge in One

LC-2-G

Contextual Info: TECHNICAL DATA MG120V2YS40 High Power Switching Applications. Motor Control Applications. # # # # # The Electrodes are Isolated from Case. High Input Im pedance Includes a Com plete Half Bridge in O ne Package. Enhancem ent-M ode High Speed: t, = 1.5 is (M ax. (I, = 120 A)

Contextual Info: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z

transistor equivalent book FOR D 1047

Abstract: MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor

bc879

Abstract: transistor BC879 BC879 darlington transistor bc875 NPN POWER DARLINGTON TRANSISTORS bc879 transistor 24825
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC875; BC879 NPN Darlington transistors Product specification Supersedes data of 1999 May 28 2004 Nov 05 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 FEATURES

Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC

Contextual Info: application INFO available UC1879 UC2879 UC3879 Phase Shift Resonant Controller FEATURES DESCRIPTION • Programmable Output Turn On Delay; Zero Delay Available The UC3879 controls a bridge power stage by phase shifting the switching of one half-bridge with respect to the other. This allows constant frequency

Contextual Info: MOTOROLA Order this document by MCR12/D SEMICONDUCTOR TECHNICAL DATA MCR12 SERIES* Advance Information 'Motorola preferred devices Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 12 AMPERES RMS 600 thru 800 VOLTS Designed primarily for half-wave ac control applications, such as motor

MPS-082508-85

Abstract: 082508-85
Contextual Info: [MkzÏÏ MPS-082508-85/-86 800 to 2500 M H z High Linearity Amplifier F eature • +38 dBm Typical IP3 • +27 dBm Typical P1dB • 1 3 dB Typical Gain • 12 Volt Bias • Available in Surface M ount or Half Flange Package Description The MPS-082508-85 is broadband, self-biased GaAs FET amplifier. It is ideal for digital communications applica­

Ignition Driver IC

Abstract: programmable ignition control PT5615 ptc fluorescent ballast HALF-BRIDGE DRIVER PT5615-S high frequency ignition
Contextual Info: PT5615 Ballast Control IC DESCRIPTION The PT5615 is a ballast control IC, with the 650V half-bridge driver and full protections, designed to drive all types of fluorescent lamps. The features such as programmable preheat time and frequency, programmable and precise run frequency, self-adapting