HA 11561 Search Results

Am2BF512

Contextual Info: HNA: AMD£I A m 28F512 512 Kilobit 64 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase

Contextual Info: PRELIMINARY Am27LV020 Advanced Micro Devices 262,144 x 8-Bit CMOS Low Voltage, One Time Programmable Memory DISTINCTIVE CHARACTERISTICS • 3.3 V ± 0.3 V Vcc read operation Program voltage 12.75 ± .25 V ■ High performance at 3.3 Vcc - 200 ns maximum access time

Contextual Info: •ìAPt t' i ' PRELIMINARY Am27LV512 Advanced Micro Devices 65,536 x 8-Bit CMOS Low Voltage, One Time Programmable Memory DISTINCTIVE CHARACTERISTICS • ■ 3.3 V ± 0.3 V Vcc read operation Program voltage 12.75 ± 0.25 V High performance at 3.3 V Vcc Latch-up protected to 100 mA

Contextual Info: a Preliminary Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ Low power consumption - 30 mA maximum active current - 1 0 0 nA maximum standby current ■

Contextual Info: n Preliminary Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ Low power consumption ■ Flasherase Electrical Bulk Chlp-Erase - One second typical chip-erase

AMD am3 socket pinout

Abstract: amd am3 pin out AM28F512
Contextual Info: ADV MI CR O MEM OR Y 4fiE D 02S7SEÖ Preliminary DG30bäS 5 « A M D 4 T—46—13—27 Advanced Micro Devices A m 2 8 F 5 1 2 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time • Low power consumption

AAYP37

Abstract: dioda
Contextual Info: DIODA IMPULSOWA AAYP37 7-74/1 SWW 1156-131 Dioda germanowa z ostrzem ziotym jest przeznaczona do stosowania w ukladach przel^czaj^cych áredniej szybkosci. Param etry dynamiczne; Czas przel^czania w przód przy I f = 100 mA; Up = 1,2 V Czas przelqczania przy ÍF = 5 MA;

BYP401-50

Abstract: BYP401-100 BYP401-400 BYP401-1000 BYP401-600 BYP401-200 BYB401-50 BYP401-800 BYP401 dioda n 04
Contextual Info: — DIODA PROSTOWNICZA BYP401 -i m 4o o ? 22- 74/2 SWW 1156-112 D iada krzem ow a dyfuzyjna je st przeznaczona do stosow ania w ukíadach prostow niczych m alej i áredniej moey. K ierunek napisu oznaczenia n a obudow ie diody w skazuje k ierunek przew odzenia.

28FS12

Contextual Info: a Am28F512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 pA maximum standby current

Contextual Info: P R E L IM IN A R Y Am 2 7L V 010 Advanced Micro Devices 131,072 x 8-Bit CMOS Low Voltage, One Time Programmable Memory DISTINCTIVE CHARACTERISTICS • 3.3 V ± 0.3 V Vcc read operation Program voltage 12.75 ± .25 V ■ High perform ance at 3.3 Vcc - 200 ns m aximum access time

Contextual Info: a Am28F512 Advanced Micro Devices 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ ■ — No data retention power consumption

BYP660-100R

Abstract: BYP660-700R BYP660-300R BYP660 BYP660-50R BYP660-500 BYP660 dioda BYP660-300 BYP660-500R BYP660-700
Contextual Info: DIODA PROSTOWNICZA BYP660 R 23'74/2 SWW 1156-112 D ioda krzem ow a dyfu zyjn a je st przeznaczona g!6w n ie do stosow ania w ukladach prostow niczych m alej i Sredniej m ocy. A noda diody jest pol^czona galw aniczn ie z obudow g, co zakodow ane jest lite r s ,R” na koncu oznaczenia typu diody np.: BYP660— 7O0R.

11561-011A

Contextual Info: Preliminary a Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Flasherase Electrical Bulk Chip-Erase - One second typical chip-erase - 90 ns maximum access time ■ Low power consumption

data programmers DIP PLCC

Abstract: AMD 478 socket pinout
Contextual Info: ADV MICRO MEMORY BÖE •.G2S?SSfl QGETÖBQ S ■ A M » 4 a Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memoty DISTINCTIVE CHARACTERISTICS ■ High performance - 9 0 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc+1 V

Contextual Info: Customer Information Sheet D RAWING N o . : M80-926XXXX SHEET 2 OF 2 I IF SPEC I F I C A T O N S : MATERIAL: P O L Y A M I D E 46 U L 9 4 V - 0 , B L A C K MOULDING PHOSPHOR BRONZE CONTACTS FINISH: CONTACTS: 22 - 0 . 7 5 ju G O L D ON C O N T A C T A R E A

AMD a 462 socket pinout

Contextual Info: ADV MICRO MEMORY 38E Q 02s7saa 7 hamdm ggetöoq ¿Ü^PreOmlnarypllfc" r= 4 (,- ß - 2 l Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time Low power consum ption

Contextual Info: a PRELIMINARY A m 2 7 L V 1 Advanced Micro Devices 131,072 x 8-Bit CMOS Low Voltage, One Time Programmable Memory D IS T IN C T IV E C H A R A C T E R IS T IC S • 3.3 V ± 0.3 V Vcc read operation Program voltage 12.75 ± 0.25 V ■ High performance at 3.3 Vcc

AM28F256

Contextual Info: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current

apm 4550

Abstract: ALL TYPE tv IC DATA AND manual substitution BOOK transistor book Hex schmitt trigger ecl i386SX PROGRAMMER REFERENCE CPU BOARD OF AOC 20S 53c94 NCR 17058a ALL TYPE IC DATA AND manual substitution BOOK intel 386sx overdrive
Contextual Info: 3-Volt System Logic for Personal Computers Data Book I Advanced Micro Devices 3-Volt System Logic for Personal Computers Data Book d v a n c e d m i c r o d e v i c e s n 1992 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products

xn 1049 dp

Abstract: atmel u122 o2c ADQ44 a6252 ic a6252 atmel 938 32c ADQ36 22B35 ad 11800 t8 ATMEL 812 24C
Contextual Info: This Document can not be used without Samsung's authorization. 7. Circuit Diagram 4 SE DONA Signature : 3 3 APPROVAL 2005/10/05 SEDONA MAIN BA41-#####A PR 0.81 CPU :Intel Y onah667 Chip Set :Intel Calistoga & ICH7-M Remarks : Mobility Platform : : : : : :

Contextual Info: ZI F IN A L A m 2 8 F 5 1 2 Advanced Micro novices 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ ■ C o m pa tib le w ith JE D E C -standard byte -w id e

Contextual Info: »MR l i las« P R E L IM IN A R Y il Am27LV020 Advanced Micro Devices 262,144 x 8-Bit CMOS Low Voltage, One Time Programmable Memory DISTINCTIVE CHARACTERISTICS • 3.3 V ± 0.3 V Vcc read o peration Program voltage 12.75 ± .25 V ■ High p erfo rm an ce at 3.3 Vcc

am28f020-95

Abstract: M28F020
Contextual Info: a A dvance In fo rm a tio n Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ ■ Flasherase or Embedded Erase™ Electrical Bulk Chip-Erase - Two second typical chip-erase

28F256

Contextual Info: a F IN A L Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High performance - ■ Low power consumption - I 30 mA maximum active current 100 \>A maximum standby current No data retention power Compatible with JEDEC-standard byte-wide