H65 PACKAGE Search Results

28-pin

Abstract: carrier H84 Package 68-pin circuit diagram diagram free transistor equivalent book H67 Package led data book free download h846
Contextual Info: Package Diagram Ceramic Windowed J-Leaded Chip Carriers 32-Pin Windowed Leaded Chip Carrier H32 1 Package Diagram 28-Pin Windowed Leaded Chip Carrier H64 2 Package Diagram 32-Pin Windowed Leaded Chip Carrier H65 3 Package Diagram 44-Pin Windowed Leaded Chip Carrier H67

Contextual Info: Package Diagrams Ceramic Windowed J-Leaded Chip Carriers 32-Pin Windowed Leaded Chip Carrier H32 1 Package Diagrams 28-Pin Windowed Leaded Chip Carrier H64 51-80077 2 Package Diagrams 32-Pin Windowed Leaded Chip Carrier H65 51-80078 3 Package Diagrams 44-Pin Windowed Leaded Chip Carrier H67

80081

Abstract: H65 Package
Contextual Info: Package Diagram Ceramic Windowed J-Leaded Chip Carriers 32-Pin Windowed Leaded Chip Carrier H32 1 Package Diagram 28-Pin Windowed Leaded Chip Carrier H64 51-80077 2 Package Diagram 32-Pin Windowed Leaded Chip Carrier H65 51-80078 3 Package Diagram 44-Pin Windowed Leaded Chip Carrier H67

Contextual Info: THE ANGSTROHM FAMILY Of Metal Film Resistive Products ANGSTROHM Resistors - Hermetically Sealed MODELS H55, H57, H60, H65, H70 Metal Film Resistors Excellent High Frequency Performance and a Hermetic Glass E n c lo s u re which is Impervious to Harmful Environments

H5128

Abstract: CY27H512
Contextual Info: PRELIMINARY Functional Description Features D D D D D Ċ Ċ Ċ Ċ High speed tAA = 25 ns max. commercial tAA = 35 ns max. (military) Low power 275 mW max. Less than 85 mW when deselected ByteĆwide memory organization 100% reprogrammable in the windowed package

chn 630

Contextual Info: m m /m - kvw - ' » u - x Visible Light Emitting Diode Package Series Pl»563fe* * * - K J ü , G WS!, S ii Visible Light Emitting Diode (J-types, GW-types, S-types) an s /jv s s u • 4 5 æ e â î i u E o £ • 'M L îS M C O n - y ^ r - ' j • ifjillS v

CY27H512

Contextual Info: fax id: 3020 ,.V.Ï.Ï.V.^ y nr' Æ CYPRESS CY27H512 P R E L IM IN A R Y 64K x 8 High-Speed CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H512 is avail­

Contextual Info: fax id: 3020 ¿¡¡P: CYPRESS CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H512 is avail­

CY27H010-45PC

Abstract: 27H010-70 27H010-45 27H010 CY27H010
Contextual Info: ^ 0 CY27H010 CYPRESS Features 128K X8 High-Speed CMOS EPROM F unctional D escription • CMOS for optimum speed/power • High speed — t^A — 25 ns max. commercial — *aa — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected

CY27H512

Contextual Info: fax id: 3020 1CY 27H5 12 CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected

tce 1994

Abstract: CY27H010-45WC CY27H010 CY27H010-45PC
Contextual Info: CY27H010 128K x 8 HighĆSpeed CMOS EPROM The memory cells utilize proven EPROM Functional Description Features D D D D D The CY27H010 is a highĆperformance, 1Ćmegabit CMOS EPROM organized in 128 Kbytes. It is available in industryĆstanĆ dard 32Ćpin, 600Ćmil DIP, LCC, PLCC, and

Contextual Info: ¿/iiuiu. luööutiy, rwufucuy io, Revision: August 18,1994 ^ CYPRESS CY27H010 128K X 8 High-Speed CMOS EPROM Features Functional Description • CMOS for optimum speed/power • Highspeed — tAA = 25 ns max. commercial — *a a = 35 ns max. (military)

CY27H010-45PC

Abstract: CY27H010-55Wmb 27H010 CY27H010
Contextual Info: CY27H010 « r CYPRESS Features 128K X8 High-Speed CMOS EPROM F unctional D escription • CMOS for optimum speed/power • High speed — t^A — 25 ns max. commercial — *aa — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected

Contextual Info: CY27H512 PRELIMINARY ^ /C Y P R E S S 64K X Features • CMOS for optimum speed/power • High speed — t.4A = 25 ns max. commercial — t^A — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

Contextual Info: 5 - 1000 MHz Standard Hybrid Amplifier Parameters • 5-1 0 0 0 M H z b iD r l" +25 MHz 14.8 ± 0.8 dB Gam vs. tem perature , +0.5/-0.8 dB Max Gain flatness 1.0 1.2 dB Max p-p Reverse isolation 17 17 dB Min Input 1.8:1 2.0:1 Max Output 1.8:1 2.0:1 Max + 10

Contextual Info: CY7B201 PRELIMINARY SEMICONDUCTOR Reprogrammable 128K x 8 Power-Down PROM Features Functional Description • BiFAMOS for optimum speed/ power • Highspeed — U a = 25 ns max. commercial — 1aa = 30 ns max. (m ilitary) • Low-power stand-by mode — 1210 mW max.

M5447

Contextual Info: M ITSU B ISH I B IP O LA R DIGITAL ICs M54479P S * « * ' V "» * a* * 1 1 /6 4 HIGH S P E E D D IV ID ER DESCRIPTION "h e M54479P is a semiconductor integrated circuit consist­ ing of an extremely high-speed 1/64 divider using emittercoupled logic. PIN CONFIGURATION TOP VIEW

CIRCUIT diagram tv sharp 21 BG 12

Abstract: IR3P04 sharp tv power supply section circuit diagram sharp tv 15v vertical ic s26 sharp 357 SHARP
Contextual Info: TV Video, Chroma & Deflection System IR3P04B • IR3P04B TV Video, Chroma & Deflection System Pin Connections Description The IR3P04B is a signal processing IC for video chrom a and sy n c h r o n o u s d e fle c tio n of N TSC system. ■ 1. 2. 3. 4. 5. 6.

c06s

Contextual Info: [ X J b — z K— 6 m m h U TOCOS x 7— ] m m m SINGLE TURN CERMET TRIMMERS R J C 6 Î / U — X FEATURES • rattfb, ft is 1114 # / J v lT ? * ‘J 4' i f <b0.5\N<nM ^m t> 'f £ S ffl o § «•«at»aic «t 5 &>i>njtg • H ig h perform ance and high reliability

279-87

Abstract: 9915 H 3 35 35 AWR0900 10GHz oscillator
Contextual Info: AWR0900 ,@ E 900 MHz Receiver MMIC ejto ig ics Preliminary Rev 3 Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES Monolithic Downconverter On Chip Oscillator/Image Filter 3 dB Noise Figure 15 dB Conversion Gain Single + 5 V Supply Power Down Capability

plessey sp

Contextual Info: PLESSEY 12E S EMI CONDUCTORS » 7520513 0010350 5 A PLESSEY W S e m ic o n d u c t o r s . SP8718AC 520MHz + 64/65 TWO MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B TheSP8718 -i-64/65 is a 50mW programmable divider with a maximum specified operating frequency of 520MHz over

Contextual Info: CY27H512 PRELIMINARY mmW U i r l i f c b o — 64K x 8 High-Speed CMOS EPROM 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. These devices offer high-density storage com­ bined with 40-M Hz performance. The CY27H512 is available in windowed and opaque packages. Windowed packages al­

LC 7258

Contextual Info: CYPRESS • CMOS for optimum speed/power • High speed — tAA = 25 ns max. com m ercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected Byte-wide mem ory organization 100% reprogram m able in the windowed package

C520

Abstract: ar1318 CY27H512 CY27H512-25JC CY27H512-25ZC CY27H512-30JC
Contextual Info: ,.V. Ï. Ï. V. ^ynr' Æ CYPRESS • CMOS fo r optimum speed/power • High speed — tAA = 25 ns max. comm ercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected Byte-wide memory organization 100% reprogramm able in the windowed package