H5DU5162EFR Search Results

Contextual Info: 512Mb DDR SDRAM H5DU5182EFR-xxI H5DU5162EFR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 / Feb. 2011

H5DU5162EFR

Abstract: DDR200 DDR266A DDR266B DDR333 DDR400 DDR500
Contextual Info: 512Mb DDR SDRAM H5DU5182EFR-xxI H5DU5162EFR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009

H5DU5182EFR-XXC

Abstract: H5DU5182EFR
Contextual Info: 512Mb DDR SDRAM H5DU5182EFR H5DU5162EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 / Feb. 2011

H5DU5182EFR

Abstract: DDR200 DDR266A DDR333 DDR400 DDR500 H5DU5162EFR H5DU5162
Contextual Info: 512Mb DDR SDRAM H5DU5182EFR H5DU5162EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009

Contextual Info: Data Sheet Rev.1.1 09.06.2010 256MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN03264C1CE1HY-50R 256MB PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 • Module densities 256MB with 4 dies and 1 rank

H5TQ2G63BFR-H9C

Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
Contextual Info: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9

H5DU5162

Contextual Info: Data Sheet Rev.1.1 09.06.2010 256MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN03264C1CE1HY-50R 256MB PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 • Module densities 256MB with 4 dies and 1 rank

H5DU5162

Abstract: H5DU5182 H5DU518 H5DU5182EFR-XXC H5DU
Contextual Info: 512Mb DDR SDRAM H5DU518 6 2EFR-xxC H5DU518(6)2EFR-xxI H5DU518(6)2EFR-xxL H5DU518(6)2EFR-xxJ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.