H442 Search Results

H442

Abstract: H440
Contextual Info: MICROSEMI CORP/ MICRO SbE » / • bllS^D? Q0Q1457 TTl ■flûL QUALITY SEMICONDUCTOR, INC. High Voltage Full Wave Bridge Rectifiers H439 H440 H441 H442 H443 2kV, 4kV, 6kV, 8kV, and 10kV VHrM Ratings .5 Amp to 1.5 Amp DC Forward Current 20 Amp Peak One Half Cycle Surge Current

H9435S

Abstract: h4422 H9435 H943
Contextual Info: HI-SINCERITY Spec. No. : MOS200907 Issued Date : 2009.03.09 Revised Date : Page No. : 1/5 MICROELECTRONICS CORP. H4422S • N-Channel Enhancement-Mode MOSFET 30V, 11A 8-Lead Plastic SO-8 Package Code: S H4422S Symbol & Pin Assignment Features • RDS(on)=13.5mΩ@VGS=10V, ID=11A

H442

Abstract: H439 H441 h4404
Contextual Info: MICRO OUALITV / S E M IC O N D U C T O R , IN C High Voltage Full Wave Bridge Rectifiers H439 H440 H441 H442 H443 2kV, 4kV, 6kV, 8kV, and 10kV VRRM Ratings .5 Amp to 1.5 Amp DC Forward Current 20 Amp Peak One Half Cycle Surge Current High Purity Epoxy Encapsulation

PTFB090901EA

Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB

2N3405

Abstract: transistors equivalent AP 3706 P mps3702 MPS3704 equivalent T0-92B transistors mps3704 2N3404 2n3402
Contextual Info: 2N3702 trough 2N 3706 MPS 3702 through MPS 3706 I PNP . NPN SILICON GENERAL PURPOSE AP TRANSISTORS THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AP MEDIUM POWER APPLICATIONS. THE 2N3702 SERIES ARE SUPPLIED IN CASE TO-92B. THE MPS3702 SERIES ARE SUPPLIED IN

Contextual Info: PTFC262157FH advance specification Confidential, Limited Internal Distribution Description advance specification Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Advance Specification Data Sheets describe products that are being considered by Infineon

R113183

Abstract: 9228-N-140 R125705 8156-a-0440
Contextual Info: Cross Reference AEP 1-104 1-109 1-110 1-113 1-118/063 1-119 1-122 1-125 1-142 1-301/188 1-301/196 1-302/188 1-302/196 1-303/188 1-303/196 1-305/188 1-305/196 1001-1541-010 1001-1571-002 1001-1571-003 1001-7541-010 1001-7571-002 1001-7571-003 1002-1541-010

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: Preliminary PTAB182002TC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805

IC HS 8108

Abstract: IC HS 8109 8216-B-0632 B1566 1032 9738a H772 8212-B-0440 bl57 h834
Contextual Info: Electronic Hardware £ EFJohnson ^ COMPONENTS Part Number Cross Reference H.S. Smith E.F.J. H.S. Smith E.F.J. H.S. Smith E.F.J. 100 101 108-0753-001 456-101 456-102 108-0301-001 1499-102 108-0740-102 108-0302-001 102 108-0750-001 108-0771-001 456-103 456-104

9738a

Abstract: TJ-102
Contextual Info: J lo h N S O N AEP Com petitor Cross Reference Components JC I 1-104. . 131-6701-401 1-109. . 131-6701-201 1-110. . 131-6701-301 1-113. . 131-6901-801 1-118/063 . . 131-6701-801

MPC8308

Abstract: MPC8308RM RCA 16673 MPC83xx etsec example ipic MDR 68 pinout mmc EXT_CSD nand flash tlc ECC cto cm1 1050 198
Contextual Info: MPC8308 PowerQUICC II Pro Processor Reference Manual MPC8308RM Rev. 0 4/2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

VARO VC80

Abstract: varo h441 varo h440 VC40X varo vf25-25x varo semiconductor vc-404 h441 VC80X varo vf25-10x
Contextual Info: G VARO SEMICONDUCTOR, INC. P.O. BOX 676, 1000 N. SHILOH, GARLAND, TEX. 75040 214 272-4551 TWX 910-860-5178 HIGH VOLTAGE DIFFUSED SILICON POWER RECTIFIERS Case Style A I B Pkg. Length I ' Dia. C D Min. Wire Nominal LM gth Wire Dia. .250 2.000 .300 .300 3.000

Contextual Info: When you choose Hammond - you choose. Experience: Building quality racks & cabinets for over 60 years! Sampling from our oldest surviving catalog G53 - printed in 1939 Support: In stock factory & distributor inventory! The best products in the world are no good

Contextual Info: HMC442LC3B v03.0514 LINEAR & POWER AMPLIFIERS - SMT GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz Typical Applications Features The HMC442LC3B is an ideal gain block or driver amplifier for: Gain: 13 dB • Point-to-Point Radios Supply Voltage: +5V

Contextual Info: PTAB182002TC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805