PTAB182002TC Search Results
PTAB182002TC Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PTAB182002TCV2R250XTMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC RF FET LDMOS 190W H-49248H-4 | Original | 175KB | |||
| PTAB182002TCV2R250XUMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS | Original | 170.18KB | |||
| PTAB182002TCV2XWSA1 | Infineon Technologies | IC RF FET LDMOS 190W H-49248H-4 | Original | 377.62KB | 3 |
PTAB182002TC Price and Stock
Infineon Technologies AG PTAB182002TCV2R250XUMA1- Tape and Reel (Alt: PTAB182002TCV2R250XUMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PTAB182002TCV2R250XUMA1 | Tape & Reel | 250 |
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PTAB182002TC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: PTAB182002TC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output |
Original |
ptab182002tc180-watth-49248h-4 | |
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Contextual Info: Preliminary PTAB182002TC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 |
Original |
ptab182002tc190-watt | |
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Contextual Info: PTAB182002TC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 |
Original |
ptab182002tc180-watth-44248h-4 | |
PTFB090901EAContextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB |
Original |
ptva093002tc960mhz758mhzpxac201602fc+6 |