H3E TRANSISTOR Search Results

Contextual Info: N AMER PHILIPS/DISCRETE bb.53331 □□33117 311 • APX BLV90/SL h3E D J V U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile.

Contextual Info: H3E I SEUITRON INDUSTRIES LTD TJ • 813768=1 0000105 4 « S L C B 'T - W - T 'b TM SERIES- PI-RANGE Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 68V - 350 Volts ■100A Peak Pulse Current APPLICATIONS ■ Transient voltage suppression for induced lightning, NEMP,

Contextual Info: SEMITRON INDUSTRIES LTD H3E D • fliaTflftR 000015R S B S L C B BZY9IIZ6 S E R I E S Hermetically Sealed Packaged ■Voltage Regulator Diode Released to BS9305-F081 ■Voltage Range 3V6 to 200 Volts 75 Watt Steady State ■ 5000 Watt Peak Power APPLICATIONS

Contextual Info: SEMITRON I N D U S T R I E S LTD H3E D 013760=1 0 D Ü G 2 Q G T Œ S L C B RECTIFIERS Silicon Rectifiers Operating/Storage Temperature Range -65°C to +175°C Maximum Peak Reverse Voltage Type 1.0 Maximum Forward Peak Surge Current @ 8.3ms Superimposed Maximum Reverse

Contextual Info: 013760=1 Q Q Q G C m H3E D SEÎ1ITR0N INDUSTRIES LTD 2 ŒSLCB r- SERIES Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 6V8 - 200 Volts ■600W Peak Pulse Power 1.5 Watt Steady State ■Provisional Release ■High Rel APPLICATIONS ■ Transient voltage suppression for induced lightning, NEMP,

PHILIPS MOSFET MARKING

Abstract: SOT103 n channel depletion MOSFET Bf988 transistor SOT103 philips bf988 transistor SOT103 mosfet transistor scans sheet dual gate fet Dual-Gate
Contextual Info: h3E D Philips Components Data sheet status Preliminary specification date of issue October 1990 • bhS3TS4 GOTMBOM BIS m S I C 3 BF988 NAPC/PHILIPS SEMICON] Silicon n-channel dual gate MOS-FET FOR D E T A IL E D IN F O R M A T IO N SEE T H E LA TEST ISSUE OF H A NDB O O K SC07 OR D A T A S H E E T

M54547P

Abstract: H3E transistor
Contextual Info: b 2 4 R fl2 7 h3E DG1 5 D 5 4 M IT S U B IS H I 235 D6 TL • M IT 3 M IT S U B IS H I B IPO LA R D IG IT A L , c s M54547P L O G IC B I-D IR E C T IO N A L MOTOR D R IVER W IT H OP A M P AND TR A N S IS TO R ARRAY DESCRIPTION The M54547P, BI-DIRECTIONAL MOTOR DRIVER, consists

transistor 224-1 base collector emitter

Contextual Info: b3E • fctPMTfiS? DGISDTE MITSUBISHI DGTL OM^ ■ MIT3 M ITSUBISHI BIPOLAR DIGITAL ICs M54568L LOGIC 4-U N IT 30mA PNP TRANSISTOR ARRAY DESCRIPTION The M54568L, general purpose transistor array, consists of 4 PNP transistors connected in a commom-emitter configura­

IC AVW

Abstract: 2SB1356 2sd2036
Contextual Info: 2SB1356 / T ransistors 2SB1356 I b P N P h Epitaxial Planar PNP Silicon Transistor fé ü >j£1t:£jiÍlíiffl/L o w Freq. Power Amp. • x tiiH /D im e n s io n s Unit : mm 1 ) V c E (sat) V c e (s a t)= — 0 .3 V (Typ.) (Ic /I b = - 4 A / —0.4A) ftTL'5„

EV76C570

Abstract: D1212 Transistor sensor cmos CLCC 24 layout JEDEC-JESD47 CLCC-48 package ev76 JESD47 p1599 "saturation value" Color Filter Array CFA
Contextual Info: EV76C570 2 Mpixels B&W and Color CMOS Image sensor FEATURES • 2 million 1600 x 1200 pixels, 4.5 µm square pixels with micro-lens • Optical format 1/1.8” • 50 fps@ full resolution Embedded functions: • Image Histograms and Context output • Sub-sampling / binning

EV76C560

Abstract: CLCC-48 package EV76C560ACT-EQV transistor D1292 EV76C560ABT-EQV 2xg2 ev76 Color Filter Array CFA Camera Sensor clcc
Contextual Info: EV76C560 1.3 Mpixels B&W and Color CMOS Image Sensor Datasheet Features • • • • • • • • • • 1.3 million 1280 x 1024 pixels, 5.3 µm square pixels with micro-lens Optical format 1/1.8" 60 fps@ full resolution Embedded functions: – Image Histograms and Context output

TPC6603

Abstract: H3E transistor
Contextual Info: TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications DC/DC Converter Applications Unit: mm Strobe Flash Applications • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.19 V (max)

Contextual Info: TPC6603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications DC/DC Converter Applications Unit: mm Strobe Flash Applications • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.19 V (max)

EV76C560

Abstract: CLCC-48 package EV76C560ACT-EQV transistor D1292 d1292 EV76C560ABT-EQV ev76 BG-38 sensor cmos CLCC 24 layout circuit diagram electronic cctv
Contextual Info: EV76C560 1.3 Mpixels B&W and Color CMOS Image Sensor Datasheet Features • • • • • • • • • • 1.3 million 1280 x 1024 pixels, 5.3 µm square pixels with micro-lens Optical format 1/1.8" 60 fps@ full resolution Embedded functions: – Image Histograms and Context output

Contextual Info: SANYO SEMICONDUCTOR CORP b3E D • 7 [n 7 G ? b D012D11 51T «TS A J a m ^ z l— - y S uita ble i Type No. °ackaqe RP • : MIX-OSC M o s t S uitable ,F Arr'° o "c o n v • • Detector Narrow tana stop&gr» • Local Buffer Voltage Range CV LA1130

IN 5821

Contextual Info: 013700^ O D O ü n O T O S L C B 43E D SEMITRON INDUSTRIES LTD - T - Q - 3 .- I 3 RECTIFIERS Schottky Barrier Rectifiers Operating/Storage Temperature Range -6 5 C - 150 C Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load

Contextual Info: SEMITRON I N D U S T R I E S LTD 43E D m 013700^ DOOOIRI 1 BSLCB ~ T - - o 3 > ~ 7 % 'n ÌJ ÌT Ò . Schottky Barrier Rectifiers Operating/Storage Temperature Range -65°C - 150"C Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave

ph 41 zener diode

Contextual Info: S E M T R O N INDUSTRIES LTD i 3E 1> • S137SS1 000016M 4 B S L C B T ~ O T > - n IN3379-IN3883 s e r i e s Fast Recovery Rectifier 6 Amp Silicon Diode FEATURES METAL D04 ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current ■ Normal and reverse polarity

5KV DIODE

Abstract: h8 diode zener 127 S0T23
Contextual Info: SEÏ1ITR0N INDUSTRIES LTD 43E D B 013703^ ODGGllb T HISL CB ' 7 7 n ^ n - z 3 SERIES AI-RANGE Transient Voltage Suppressor • Glass Passivated Junction Voltage Range 68 - 350 Volts ■ 100A Peak Puise Current APPLICATIONS MECHANICAL DATA ■ The Semitron series protection devices incorporate state of

GDT, semitron,

Contextual Info: S E M T R O N INDUSTRIES LTD 13E 1 • ai37iai 0000134 D « S L C B - P I 1- r> FIO DATA LINE PROTECTION Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 6.8V to 48 Volts Nominal 100A Peak Pulse Current APPLICATIONS NEW GENERATION ■ Transient voltage suppression for Induced Lightning, NEMP,

APT90GF100JN

Abstract: sgs Thomson Thyristor G0011
Contextual Info: ADVANCED POWER M TECHNOLOGY b3 E D • 0257^01 DOÜllflD 201 * A V P A dvanced P o w er Te c h n o lo g y APT90GF100JN 1000V 90A H SINGLE DIE ISOTOP® PACKAGE ISOTOP«' POWER MOS IV®IGBT Recognized" File No. E145592 S N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE

w41 transistor

Abstract: transistor mj 1504
Contextual Info: ADVANCED POWER TECHNOLOGY b3E D • 0257^1 A OGÜllflO 2D1 « A V P d v a n c e d P ow er T e c h n o lo g y 9 APT90GF100JN 1000V 90A SINGLE DIE ISOTOP PACKAGE ISOTOP POWER MOS IV®IGBT ^ \ " U L Recognized" File No. E145592 S N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE

BY 255 diode

Abstract: diode 77 radial lead IDL41 IN3501
Contextual Info: SEMITRON INDUSTRIES LTD 43E D H 013700«? 000017^ 0 B S L C B SERIES Temperature Compensated Diode 6V35 Volts Ultra Stable APPLICATIONS Semitron Certified Semiconductor Reference Diodes are intended for use as a robust and reliable standard voltage. They can replace

T10N.C

Abstract: melf footprint PA-080
Contextual Info: SEHITRON INDUSTRIES LTD 43E D Û137flâ*i 0000132 7 W S L C B "T- TIO-NUTIO-NC SERIES Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 68V - 350 Volts ■100A Peak Pulse Current NEW GENERATION APPLICATIONS ■ Transient voltage suppression for Induced Lightning, NEMP,