H362 Search Results

PG-DSO-20

Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test

BCP56

Abstract: LM7805 PTFA190451E PTFA190451F RO4350
Contextual Info: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,

AD6440

Abstract: AD20MSP930 AD6449 TR328 ADSL modem schematics adsl modem working AD6437 AD8016 AD812 ADTSP-2183
Contextual Info: AD20msp930 ADSL Chipset NEW ADSL CHIPSET IS FULLY INTEGRATED The AD20msp930 is a next-generation solution that can push the speed of data transmission over conventional telephone lines to 10 Mbps— 90 times faster than traditional ISDN and over 200 times faster than V.90

PTFB090901EA

Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB

42756 regulator

Abstract: 42756 C207 capacitor j146 1300 transistor
Contextual Info: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

LM7805

Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
Contextual Info: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in

ssy 1920

Abstract: LM 2931 AT 05 BCP56 LM7805 PTFA191001E PTFA191001F
Contextual Info: PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA,

ATC-600A

Abstract: BCP56 LM7805 PTFA212001E PTFA212001F RO4350
Contextual Info: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier

a2324

Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
Contextual Info: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,

TL235

Contextual Info: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency

LM7805ACH-ND

Abstract: TL174 tl173 PTVA035002EV V1
Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features

Contextual Info: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

C205

Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications

PTFB090901EA

Contextual Info: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced

PTVA101K02EV

Abstract: 1030-1090MHz
Contextual Info: Preliminary PTVA101K02EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band.

PTFB090901

Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier

2SA733AP

Abstract: 2N3055B 2sc945b 2SA733A S8550D sa15tp TPT5609 MP1010B s8050d S9012H
Contextual Info: MCC's EU RoHS and Green Halogen Antimony Free Parts List Package RoHS Compliant EU RoHS Exemption Code 1.5KE10-TP/AP/BP DO-201AE X 7a Matte Tin 1.5KE100-TP/AP/BP DO-201AE X 7a 1.5KE100A-TP/AP/BP DO-201AE X 1.5KE100C-TP/AP/BP DO-201AE 1.5KE100CA-TP/AP/BP

PTFA212001E

Abstract: ATC-600A PTFA212001F LM7805 05 marking us capacitor pf l1 BCP56 LM7805 RO4350 A212001E PTFA212001EV4
Contextual Info: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier

Contextual Info: B ourns_ GENERAL INFORMATION Panel Controls Bourns Panel Controls TAPER DESCRIPTIONS Graph Models Taper Code Description Linearity T.R. Tol. 1 81,82,85,86,91 -99,3852,3856,3862,50 A Linear — Cermet ±5% Ind. ±10% 1 81,82,85,86,91 -99,3851,50

C66065-A2326-C001-01-0027

Abstract: transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805 PTFA070601E PTFA070601F
Contextual Info: PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

H-38-2

Abstract: M6 nut H-38-3 H-37-2 H-37-5 H-383 H-W09-MM H362
Contextual Info: Hardware Selection Guide Panel control mounting hardware is determined by bushing style. The "X" in the bushing style column indicates what hardware is used with the bushing. Hardware indicated by a shaded area is normally supplied with unit. Other hardware may be ordered separately.

schneider LC1-D09 wiring diagram

Abstract: Schneider LC1D18 wiring diagram MPSF23 HOM1632L200TCFT WIRING DIAGRAM lc1d32 HOM612L100 Square D Relay Class 8502 QOC20U100 QOC30U NQOD454L600
Contextual Info: 2008 SQUARE D REF GUIDE Flip 0514.qxd SQUARE D INFORMATION RESOURCES Local Square D Sales Office: _ _ Square D Customer Information Center: 1-888-SQUARE D (1-888-778-2733) The 2008 Pocket Digest still contains Schneider Electric’s best selling catalog numbers from

PTFB090901EA

Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier