GW60 Search Results

Contextual Info: GW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 60 A • Tight parameters distribution

GW60H65DFB

Contextual Info: GW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V

STGW60

Abstract: gw60 STGWT60H65F 019012 AM-1185 stgw60h65
Contextual Info: GW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production data Features • High speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ 2 Lead free package

42-06A

Contextual Info: GW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode Datasheet - production data Applications • Photovoltaic inverters  Uninterruptible power supply  Welding  Power factor correction 2  High switching frequency converters

ST IGBT code marking

Abstract: STGW60H65F GW60H65F
Contextual Info: GW60H65F 60 A, 650 V field stop trench gate IGBT Preliminary data Features • Very high speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Lead free package 2 3 1 Applications

gw60h65drf

Abstract: STGW60H65DRF ST IGBT code marking schematic diagram welding device mj 340
Contextual Info: GW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode Preliminary data Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode

GW60V60DF

Contextual Info: GW60V60DF STGWT60V60DF 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Very high speed switching series • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 2 3 3 1 2 1 TO-247 • Low saturation voltage: VCE sat = 1.85 V (typ.)

Contextual Info: GW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V

gewiss gw60042

Abstract: GW60461 GW60030 GW61053 GW60015 GW60060 GW60420 GW60415 GW60404 GW60020
Contextual Info: GEWISS 0142 Authorisation Cert. No. 0503018 INDUSTRIAL PLUGS, SOCKETS & SOCKET OUTLETS IEC 309 low voltage 16A to 125A industrial plugs and sockets Socket / plug locking device GW68501 Padlock not included Key Operated plug/socket outlet attachment GW68505

gw60v60

Contextual Info: GW60V60F 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Very high speed switching series • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 2 • Low saturation voltage: VCE sat = 1.85 V (typ.)

GW60H65DFB

Abstract: GWT60H65DFB STGW60H65DFB fieldstop igbt GW60 AM01507v1
Contextual Info: GW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Contextual Info: GW60H65FB STGWT60H65FB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V

Contextual Info: GW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current • VCE sat = 1.6 V (typ.) @ IC = 60 A

Contextual Info: GW60H65F 60 A, 650 V field stop trench gate IGBT Features • Very high speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Lead free package 2 3 1 Applications TO-247

GW60H65DF

Abstract: STGW60H65DF stgw60h rthjc
Contextual Info: GW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet − preliminary data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time

Contextual Info: GW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V

Contextual Info: GW60H60DLFB STGWT60H60DLFB 600 V, 60 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Low saturation voltage: VCE sat = 1.65 V (typ.)

IGBT 60A

Contextual Info: GW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet − production data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time

Contextual Info: GW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet − production data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time

GW60H65F

Abstract: STPSC1206D STGW60H65F
Contextual Info: GW60H65F 60 A, 650 V field stop trench gate IGBT Features • High speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Lead free package 2 3 1 Applications TO-247 ■

GW60V60DF

Abstract: gwt60v60df gw60v60
Contextual Info: GW60V60DF, STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 60 A • Tight parameters distribution

GW60V60DF

Abstract: gwt60v60df
Contextual Info: GW60V60DF STGWT60V60DF 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Very high speed switching series  Maximum junction temperature: TJ = 175 °C  Tail-less switching off 2 3 3 2 1 1 TO-247  Low saturation voltage: VCE sat = 1.85 V (typ.)

Contextual Info: GW60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V