STGWT60H65DFB Search Results

STGWT60H65DFB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
STGWT60H65DFB		STMicroelectronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 375W TO3P-3L	Original	PDF		17

STGWT60H65DFB Price and Stock

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STMicroelectronics STGWT60H65DFB IGBT TRENCH FS 650V 80A TO-3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STGWT60H65DFB	Tube	139		1	1 $4.77 10 $4.77 100 $2.66 1000 $1.85 10000 $1.72	Buy Now
Avnet Americas	STGWT60H65DFB	Tube		15 Weeks	600	1 - 10 - 100 - 1000 $1.96 10000 $1.72	Buy Now
Mouser Electronics	STGWT60H65DFB		383			1 $4.77 10 $2.66 100 $2.19 1000 $1.84 10000 $1.71	Buy Now
Verical	STGWT60H65DFB		540		4	1 - 10 $3.01 100 $2.02 1000 $1.94 10000 $1.94	Buy Now
STMicroelectronics	STGWT60H65DFB		383		1	1 $4.68 10 $2.61 100 $2.15 1000 $2.15 10000 $2.15	Buy Now

Future Electronics	STGWT60H65DFB	Tube		15 Weeks	300	1 - 10 - 100 $1.78 1000 $1.73 10000 $1.68	Buy Now
TME	STGWT60H65DFB		48		1	1 $4.52 10 $3.66 100 $3.64 1000 $3.64 10000 $3.64	Buy Now
ComSIT USA	STGWT60H65DFB		15			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STGWT60H65DFB			16 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STGWT60H65DFB			16 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STGWT60H65DFB (650V HB) Igbt, Single, 650V, 80A, To-3P; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:375W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes \|Stmicroelectronics STGWT60H65DFB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	STGWT60H65DFB (650V HB)	Bulk	114		1	1 $4.27 10 $3.34 100 $2.91 1000 $2.70 10000 $2.70	Buy Now

STGWT60H65DFB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GW60H65DFB Contextual Info: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V	Original	STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB	PDF
Contextual Info: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V	Original	STGW60H65DFB STGWT60H65DFB O-247 DocID024365	PDF
GW60H65DFB Abstract: GWT60H65DFB STGW60H65DFB fieldstop igbt GW60 AM01507v1 Contextual Info: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V	Original	STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB GWT60H65DFB fieldstop igbt GW60 AM01507v1	PDF
Contextual Info: STGW60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V	Original	STGW60H65DFB STGWT60H65DFB O-247 DocID024365	PDF