GT100 Search Results
GT100 Datasheets (50)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| GT-100 | GlobTek | 100 Watts, Switchmode Power Supply, Single Output, Enclosed, Universal Input | Original | 217.47KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT100 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 156.12KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-10000A-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 10000psi Range: Absolute Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-10000G-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 10000psi Range: Sealed Gage Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-1000A-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 1000psi Range: Absolute Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-1000G-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 1000psi Range: Sealed Gage Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-100A-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 100psi Range: Absolute Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-10G-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 10psi Range: Sealed Gage Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-15000A-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 15000psi Range: Absolute Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-15000G-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 15000psi Range: Sealed Gage Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-1500A-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 1500psi Range: Absolute Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-15G-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 15psi Range: Sealed Gage Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-1A-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 1psi Range: Absolute Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-1G-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 1psi Range: Sealed Gage Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| GT1000-20000A-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 20000psi Range: Absolute Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-20000G-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 20000psi Range: Sealed Gage Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-2000G-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 2000psi Range: Sealed Gage Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-200A-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 200psi Range: Absolute Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-200G-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 200psi Range: Sealed Gage Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT1000-20A-000 | Stellar Technology | Pressure Sensor: Transducer: 0 to 20psi Range: Absolute Type | Original | 28.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT100 Price and Stock
Goford Semiconductor GT100N12D5N120V,RD(MAX)<10M@10V,VTH2.5V~3. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT100N12D5 | Reel | 5,000 | 5,000 |
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Buy Now | |||||
ROHM Semiconductor 2SAR553PHZGT100TRANS PNP 50V 2A SOT-89 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SAR553PHZGT100 | Digi-Reel | 2,412 | 1 |
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2SAR553PHZGT100 | Cut Tape | 878 | 1 |
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2SAR553PHZGT100 | Reel | 1,000 |
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ROHM Semiconductor 2SCR553PHZGT100TRANS NPN 50V 2A SOT-89 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SCR553PHZGT100 | Digi-Reel | 2,230 | 1 |
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2SCR553PHZGT100 | 16 Weeks | 1,000 |
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2SCR553PHZGT100 | 1,000 |
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Goford Semiconductor GT100P06KMOSFET P-CH 60V 60A 104W 8M(MAX |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT100P06K | Digi-Reel | 1,852 | 1 |
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Buy Now | |||||
Goford Semiconductor GT100N12MN120V,RD(MAX)<10M@10V,VTH2.5V~3. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT100N12M | Cut Tape | 708 | 1 |
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GT100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MS33649-4
Abstract: ms33649 ms3106 MS3106-14S-2S 17-4-PH GT1000
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GT1000 GT1000 B920029 MS33649-4 ms33649 ms3106 MS3106-14S-2S 17-4-PH | |
gt100
Abstract: GT100NA120UX
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GT100NA120UX OT-227 E78996 2002/95/EC OT-227 11-Mar-11 gt100 GT100NA120UX | |
GT100DA120UContextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse |
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GT100DA120U OT-227 E78996 2002/95/EC 18-Jul-08 GT100DA120U | |
GT100DA60UContextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse |
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GT100DA60U OT-227 2002/95/EC 18-Jul-08 GT100DA60U | |
igbt transistorContextual Info: GT100NA120U Vishay High Power Products "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 µs short circuit capability SOT-227 • Fully isolated package |
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GT100NA120U OT-227 2002/95/EC OT-227 18-Jul-08 igbt transistor | |
GT100DA120UContextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse |
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GT100DA120U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA120U | |
VS-GT100TP120NContextual Info: VS-GT100TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A FEATURES • Low VCE sat trench IGBT technology • 10 s short circuit capability • VCE(sat) with positive temperature coefficient • Maximum junction temperature 175 °C |
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VS-GT100TP120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GT100TP120N | |
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Contextual Info: VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C |
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VS-GT100TP60N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
GT100NA120UXContextual Info: GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package SOT-227 |
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GT100NA120UX OT-227 E78996 2002/95/EC 11-Mar-11 GT100NA120UX | |
GT100LA120UXContextual Info: GT100LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability SOT-227 • Fully isolated package |
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GT100LA120UX OT-227 E78996 2002/95/EC OT-227 11-Mar-11 GT100LA120UX | |
GT100DA120U
Abstract: gt100da120 A5034 gt100 GT100DA
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GT100DA120U OT-227 2002/95/EC 18-Jul-08 GT100DA120U gt100da120 A5034 gt100 GT100DA | |
VS-GT100LA120UXContextual Info: VS-GT100LA120UX www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package |
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VS-GT100LA120UX OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A VS-GT100LA120UX | |
GT100NA120UX
Abstract: dc to dc chopper using igbt GT-100 gt100na120
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GT100NA120UX OT-227 2002/95/EC OT-227 18-Jul-08 GT100NA120UX dc to dc chopper using igbt GT-100 gt100na120 | |
GT100DA60UContextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse |
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GT100DA60U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA60U | |
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VS-GT100LA120UXContextual Info: VS-GT100LA120UX www.vishay.com Vishay Semiconductors “Low Side Chopper” IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package |
Original |
VS-GT100LA120UX OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A VS-GT100LA120UX | |
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Contextual Info: VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C |
Original |
VS-GT100TP60N 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
GT100DA60UContextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse |
Original |
GT100DA60U OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GT100DA60U | |
vs-gt100da120uContextual Info: VS-GT100DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse |
Original |
VS-GT100DA120U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 vs-gt100da120u | |
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Contextual Info: VS-GT100DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology with positive temperature coefficient • Speed 4 kHz to 30 kHz • Square RBSOA • 3 s short circuit capability |
Original |
VS-GT100DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
VS-GT100NA120UXContextual Info: VS-GT100NA120UX www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package |
Original |
VS-GT100NA120UX OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GT100NA120UX | |
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Contextual Info: VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C |
Original |
VS-GT100TP60N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
VS-GT100LA120UXContextual Info: VS-GT100LA120UX www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability SOT-227 • Fully isolated package |
Original |
VS-GT100LA120UX OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A VS-GT100LA120UX | |
GT100DA60UContextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse |
Original |
GT100DA60U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA60U | |
GT100NA120UXContextual Info: GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package SOT-227 |
Original |
GT100NA120UX OT-227 E78996 2002/95/EC OT-227 18-Jul-08 GT100NA120UX | |