GT100DA Search Results
GT100DA Price and Stock
Vishay Semiconductors VS-GT100DA120UFIGBT MOD 1200V 187A 890W SOT227 |
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VS-GT100DA120UF | Bulk | 51 | 1 |
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Vishay Semiconductors VS-GT100DA120UIGBT MOD 1200V 258A 893W SOT227 |
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VS-GT100DA120U | Bulk | 180 |
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Microchip Technology Inc APTGT100DA60T1GIGBT MODULE 600V 150A 340W SP1 |
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APTGT100DA60T1G | Bulk | 21 |
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APTGT100DA60T1G | Bulk | 26 Weeks | 21 |
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APTGT100DA60T1G | Bulk | 21 |
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APTGT100DA60T1G | 26 Weeks |
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APTGT100DA60T1G | Tube | 7 |
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APTGT100DA60T1G | 21 |
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Microchip Technology Inc APTGT100DA120T1GIGBT MODULE 1200V 140A 480W SP1 |
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APTGT100DA120T1G | Bulk | 17 |
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APTGT100DA120T1G | Bulk | 26 Weeks | 17 |
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APTGT100DA120T1G |
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APTGT100DA120T1G | Bulk | 17 |
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APTGT100DA120T1G | 26 Weeks |
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APTGT100DA120T1G | Tube | 5 |
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APTGT100DA120T1G |
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Vishay Intertechnologies VS-GT100DA120UFModules IGBT - SOT-227 IGBT - Tape and Reel (Alt: VS-GT100DA120UF) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VS-GT100DA120UF | Reel | 12 Weeks | 160 |
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VS-GT100DA120UF | 342 |
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VS-GT100DA120UF | Bulk | 88 | 1 |
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VS-GT100DA120UF | Tube | 160 |
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VS-GT100DA120UF | 5 | 1 |
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VS-GT100DA120UF | 150 | 13 Weeks | 10 |
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VS-GT100DA120UF | 120 | 1 |
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VS-GT100DA120UF | 175 |
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GT100DA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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GT100DA120UContextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse |
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GT100DA120U OT-227 E78996 2002/95/EC 18-Jul-08 GT100DA120U | |
GT100DA60UContextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse |
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GT100DA60U OT-227 2002/95/EC 18-Jul-08 GT100DA60U | |
GT100DA120UContextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse |
Original |
GT100DA120U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA120U | |
GT100DA120U
Abstract: gt100da120 A5034 gt100 GT100DA
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GT100DA120U OT-227 2002/95/EC 18-Jul-08 GT100DA120U gt100da120 A5034 gt100 GT100DA | |
GT100DA60UContextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse |
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GT100DA60U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA60U | |
GT100DA60UContextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse |
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GT100DA60U OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GT100DA60U | |
vs-gt100da120uContextual Info: VS-GT100DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse |
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VS-GT100DA120U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 vs-gt100da120u | |
Contextual Info: VS-GT100DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology with positive temperature coefficient • Speed 4 kHz to 30 kHz • Square RBSOA • 3 s short circuit capability |
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VS-GT100DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
GT100DA60UContextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse |
Original |
GT100DA60U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA60U | |
GT100DA120UContextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse |
Original |
GT100DA120U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA120U | |
GT100DA120UContextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse |
Original |
GT100DA120U OT-227 2002/95/EC 18-Jul-08 GT100DA120U | |
gt100da60u
Abstract: 184 324 DIODE V301000 gt100
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GT100DA60U OT-227 2002/95/EC 18-Jul-08 gt100da60u 184 324 DIODE V301000 gt100 | |
GT100DA60UContextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse |
Original |
GT100DA60U OT-227 E78996 2002/95/EC 18-Jul-08 GT100DA60U | |
GT100DA120UContextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse |
Original |
GT100DA120U OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GT100DA120U | |
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