GT10 Search Results

Contextual Info: TO SH IBA GT10J301 GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1 5 .9 M A X m The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max.

Contextual Info: TOSHIBA TENTATIVE G T 1 0 J3 1 1 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd G eneration E n h anceme nt- Mode : tf= 0.30/iS M ax. H igh Speed Low S atu ratio n V oltage : V q e (s a t )= 2.7V (M ax.)

Contextual Info: TOSHIBA GT10G101 T O SH IB A IN SU LA T E D GATE BIPO LA R T R A N SIST O R SILICO N N -C H A N N E L IGBT G T 1 0 G 1 01 Unit in mm STRO BE FLASH A P PL IC A T IO N S • • • • High Input Impedance Low Saturation Voltage : VcE sat = 8V (Max.) (Iq = 130A)

Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)

GT10G102

Abstract: gt106
Contextual Info: SILICON N CHANNEL MOS TYPE GT10G102 STROBE FLASH APPLICATIONS Unit in mm 10±0.3 . High Input Impedance 0 3.2 ±0.2 2.7 ±0.2 . Low Saturation Voltage : VcE sat = 8V(Max.)(IC“ 130A) . Enhancement-Mode . 12V Gate Drive MAXIMUM RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC

stm 64 laser diode

Abstract: 10 gb laser diode 32-PIN GT10-1005LD STM-64 laser driver, STM-64 GT10-100
Contextual Info: GT10-1005LD GT10-1005LD SPECIFICATIONS PERFORMANCE CHARACTERISTICS in transmitter modules for fiber optic transmission systems such as SONET OC-192 PARAMETER SYMBOL and SDH STM-64. The laser driver IC has optional clocking enable, duty cycle control, output

GT10J301

Abstract: h0320
Contextual Info: TOSHIBA GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N C HANN EL IGBT G T 1 0J301 HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The 3rd Generation. Enhancement-Mode. High Speed. : tf^O.SO/^s Max. Low Saturation Voltage. : V c e ( s a t ) “ ^ . 7 V (Max.)

KF1502-GT10A

Abstract: KF50-HDA thermal printhead
Contextual Info: KF1502-GT10A Printheads Compact low voltage thick film thermal printhead 6dots / mm KF1502-GT10A These compact, lightweight printheads have low power requirements and are intended for ECR and mobile applications. Drawing 7.2V, a maximum print speed of 2 inches per second is possible.

MS33649-4

Abstract: ms33649 ms3106 MS3106-14S-2S 17-4-PH GT1000
Contextual Info: SERIES GT1000 0-5 Vdc PRESSURE TRANSDUCER Bonded Foil Strain Gage DESCRIPTION The STI Series GT1000 is a 0-5 Vdc output, reliable rugged pressure transducer, with a high frequency response, for measuring dynamic and static pressures. Available in absolute or sealed gage zero pressure reference, the major design feature is a fully cleanable pressure cavity. Other features of

Contextual Info: T O SH IB A GT10J301 GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1 5 .9 M A X The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max. Low Saturation Voltage. : V qe (sat) = 2-7V (Max.)

Contextual Info: T O SH IB A GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V q e (sat) = 2-7V (Max.)

2-10R1C

Abstract: GT10J303 igbt 300V 10A
Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)

R K J 0822

Contextual Info: TOSHIBA GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT fiTinnn 'w • ■ ir v w êt ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed ; tf=0t30/¿s Max, Low Saturation Voltage : Vq e (sat)~^.7V (Max.)

Contextual Info: TOSHIBA GT10J303 GT10J303 T O S H IB A IN S U L A T E D G ATE BIPO LA R T R A N SISTO R SILICO N N C H A N N E L IGBT Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S • • • • • 10 ±0.3

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

GT100DA60U

Contextual Info: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse

igbt transistor

Contextual Info: GT100NA120U Vishay High Power Products "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 µs short circuit capability SOT-227 • Fully isolated package

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

VS-GT100TP120N

Contextual Info: VS-GT100TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A FEATURES • Low VCE sat trench IGBT technology • 10 s short circuit capability • VCE(sat) with positive temperature coefficient • Maximum junction temperature 175 °C

Contextual Info: VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C

GT100NA120UX

Contextual Info: GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package SOT-227

Contextual Info: GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)

K2662

Abstract: transistor TF 431 toshiba code igbt
Contextual Info: GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications • • • • • • • Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching FS : Operating frequency up to 50 kHz (reference)

10G131

Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode