GS864 Search Results

GS8644V18

Abstract: GS8644V18B GS8644V18B-250 GS8644V72
Contextual Info: Product Preview GS8644V18 B/E /GS8644V36(B/E)/GS8644V72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 1.8 V VDD 1.8 V I/O Data Output Register. Holding FT high places the RAM in

GS8640V18

Abstract: GS8640V18T-200 GS8640V18T-250 GS8640V18T-300 GS8640V32 GS8640V36
Contextual Info: Product Preview GS8640V18/32/36T-300/250/200/167 300 MHz–167 MHz 1.8 V VDD 1.8 V I/O 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation

GS8640Z36GT

Abstract: GS8640Z18T-250 GS8640Z18T-300 GS8640Z18T GS8640Z18T-167 GS8640Z18T-200
Contextual Info: Product Preview GS8640Z18/36T-300/250/200/167 100-Pin TQFP Commercial Temp Industrial Temp 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features Because it is a synchronous device, address, data inputs, and

GS8644Z

Abstract: GS8644ZV18 GS8644ZV18B GS8644ZV72
Contextual Info: Product Preview GS8644ZV18 B/E /GS8644ZV36(B/E)/GS8644ZV72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and

Contextual Info: Preliminary GS8641EV18/32/36F-300/250/200/167 300 MHz–167 MHz 1.8 V VDD 1.8 V I/O 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 165-Bump BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation

Contextual Info: Preliminary GS864418/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edge-triggered Data Output

Contextual Info: Product Preview GS864418 B/E /GS864436(B/E)/GS864472(C) 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp Features Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipeline operation

Contextual Info: Preliminary GS864018/32/36T-xxxV 250 MHz–167 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation

Contextual Info: Product Preview GS8641ZV18/32/36F-300/250/200/167 165-Bump BGA Commercial Temp Industrial Temp 300 MHz–167 MHz 1.8 V VDD 1.8 V I/O 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features Because it is a synchronous device, address, data inputs, and

Contextual Info: GS864418/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edge-triggered Data Output

Contextual Info: Product Preview GS864418 B/E /GS864436(B/E)/GS864472(C) 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp Features Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipeline operation

Contextual Info: GS8640FZ18/36T-5.5/6.5/7.5/8 5.5 ns–8 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 72Mb Flow Through Synchronous NBT SRAM 100-Pin TQFP Commercial Temp Industrial Temp Features available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write

GS864418

Abstract: GS864418B GS864418B-250 GS864472
Contextual Info: Product Preview GS864418 B/E /GS864436(B/E)/GS864472(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Flow Through/Pipeline Reads

GS8642V18

Contextual Info: Product Preview GS8642V18 B/E /GS8642V36(B/E)/GS8642V72(C) 4M x 18, 2M x 36, 1M x 72 36Mb S/DCD Sync Burst SRAMs 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp Features 300 MHz–167 MHz 1.8 V VDD 1.8 V I/O Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the

GS8644Z36GE-250

Abstract: GS8644Z18 GS8644Z18B GS8644Z36B GS8644Z72C
Contextual Info: Preliminary GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

GS8640Z18T

Abstract: GS8640Z18T-167 GS8640Z18T-200 GS8640Z18T-250 GS8640Z18T-300
Contextual Info: Preliminary GS8640Z18/36T-300/250/200/167 100-Pin TQFP Commercial Temp Industrial Temp 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features Because it is a synchronous device, address, data inputs, and

GS8640Z18T-167V

Abstract: GS8640Z18T-200V GS8640Z18T-250V
Contextual Info: Preliminary GS8640Z18/36T-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT No Bus Turn Around functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with

Contextual Info: GS8640E18/32/36T-300/250/200/167 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation

GS8640Z18T

Abstract: GS8640Z18T-167 GS8640Z18T-200 GS8640Z18T-250 GS8640Z18T-300 GS8640Z36GT-167
Contextual Info: Product Preview GS8640Z18/36T-300/250/200/167 100-Pin TQFP Commercial Temp Industrial Temp 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features Because it is a synchronous device, address, data inputs, and

GS864018T-167

Abstract: GS864018 GS864018T-200 GS864018T-250 GS864018T-300 GS864032 GS864036 GS864036GT-250
Contextual Info: Product Preview GS864018/32/36T-300/250/200/167 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline

Contextual Info: GS8644Z18E/GS8644Z36E 165-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

Contextual Info: GS8640Z18/36T-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT No Bus Turn Around functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

Contextual Info: GS8640FZ18/36T-5.5/6.5/7.5/8 5.5 ns–8 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 72Mb Flow Through Synchronous NBT SRAM 100-Pin TQFP Commercial Temp Industrial Temp Features available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write

GS864236B

Abstract: GS864272C-167V GS864218B-167V GS864218B-200V GS864218B-250V GS864
Contextual Info: GS864218/36/72 B/C -xxxV 119- & 209-Pin BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan