8644ZVXX Search Results

GS8644Z

Abstract: GS8644ZV18 GS8644ZV18B GS8644ZV72
Contextual Info: Product Preview GS8644ZV18 B/E /GS8644ZV36(B/E)/GS8644ZV72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and

mcm 250

Contextual Info: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

GS8644Z

Contextual Info: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

Contextual Info: Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

GS8644Z36B

Abstract: GS8644Z72C GS8644ZV18 GS8644ZV72
Contextual Info: Product Preview GS8644ZV18 B/E /GS8644ZV36(B/E)/GS8644ZV72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

GS8644ZV18

Abstract: GS8644ZV18B GS8644ZV72
Contextual Info: Preliminary GS8644ZV18 B/E /GS8644ZV36(B/E)/GS8644ZV72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

Contextual Info: Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

Contextual Info: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

26020

Abstract: ir 21015 GS8644Z18E-133 GS8644Z18E-150 GS8644Z18E-166 GS8644Z18E-200 GS8644Z18E-225 GS8644Z18E-250 GS8644Z36E-150 GS8644Z36E-166
Contextual Info: Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the