GS 669 Search Results

si8956

Contextual Info: T e m ic SÌ8956AZ/883 Siliconix Quad N-Channel Enhancement-Mode MOSFET Product Summary r DS on ( Q ) I d (A) 0.1 @ v GS = 10 V 5 0.2 @ V GS = 4.5 V 1 V d s CV) 20 LCC-20 Sj Si D2 D2 Gj D4 D4 G3 S3 S3 Top View Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Contextual Info: _ rz7 3GE D • 7 ci2cJ237 0030140 2 SCS-THOMSON ^7# M »ilLiraM O gS s G s-Thomson SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION:

GR451

Abstract: GP247 GP356 GP410 GP415 GP347 GP327 GP533 GP239 gm392
Contextual Info: Types GE, GH, GM, GP, GR, GS, GT Disc Ceramics Capacitors General Purpose Capacitors Type G general purpose disc ceramic capacitors are an ideal choice for low cost, small size and low to high DC voltage, general purpose, coupling, by-pass and filtering applications.

EIA-364-09

Abstract: EIA-364-21 EIA-364-28 EIA-364-31 EIA-364-32 EIA-364-10 EIA364-1000 EIA-364-65
Contextual Info: TYPE NUMBER PRODUCT SPECIFICATION TITLE GS-12-301 PAGE REVISION 1 of 4 EXPRESSCARD HOST SYSTEM PRODUCT SPECIFICATION AUTHORIZED BY A DATE KENNY TAI 07/08/'04 CLASSIFICATION CONFIDENTIAL 1. OBJECTIVE This specification defines the performance, test, quality and reliability requirements of ExpressCard host

ti082

Contextual Info: Æ T SCS TH O M SO N M ê^(&[i(gIF[MO(gS TL082 TL082A - TL082B GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIERS • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE (UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ OUTPUT SHORT-CIRCUIT PROTECTION

3AD3

Abstract: barrel shifter block diagram intel 68000 INSTRUCTION SET lb 8930 TS68930 TS68931 block diagram for barrel shifter aos Manufacturing date code "saturation flag" xacu
Contextual Info: f Z 7 SGS-THOMSON m 7# [RÆQ g[i? iUi Tr^©[ïaO(gS TS68930/31 DIGITAL SIGNAL PR O C ESSO R 160ns INSTRUCTION CYCLE TIME PARALLEL HARVARD ARCHITECTURE SEPARATED PROGRAM AND DATA BUSES THREE DATA BUSES STRUCTURE DUAL EXTERNAL BUSES ONE CYCLE 16-BIT R M OPERATION ON EX­

RS1026

Abstract: RS1064C SRS 4451 siemens datenbuch "WF Berlin" srs 360 RS1002A yl 1050 tetrode siemens rs 1007 RS1046 RS1072C
Contextual Info: S IE M E N S Datenbuch 1980/81 gsgekühlt • for t • wassergekü ühlt * verdamp ühlt • siedekor nsgekühlt *stra i r e r i ü h " • K i • ssergeku ühlt * verdamp ühlt * sied ikon nsgekühlt *stra gs skühlt • for t * wassergekü :ühlt • verde p

15K05

Abstract: C2390 Sharp Scan mute pin D41N4004 keyboard matrix 18*8
Contextual Info: SHARP E L E K / M E L E C .O IV 1SE D I 0 Q0 13 GS Pulse Dialer C M O S LSI LR40994 T-75-Û 7-Û 7 LR40994 • Pulse Dialer CMOS LSI Description ■ Pin Connections The LR40994 is a monolithic CMOS LSI which uses a CR oscillator and provides the features re ­

Mosfet FTR 03-E

Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
Contextual Info: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP

HAT2042T

Abstract: Hitachi DSA00240
Contextual Info: HAT2042T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-669F Z 7th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 8 D 1 D 4 G

Hitachi DSA002752

Contextual Info: HAT2042T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-669F Z 7th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 8 D 1 D 4 G

Hitachi DSA002731

Contextual Info: HAT2042T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-669F Z 7th. Edition Feb. 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 8 D 1 D 4 G 65 12

08CNE8N

Abstract: IPP08CNE8N JESD22 PG-TO220-3 D475A C3175
Contextual Info: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature

Contextual Info: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 8.2 m: ID 95 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature

IEC61249-2-21

Abstract: IPP08CNE8N JESD22 PG-TO220-3 diode R 107
Contextual Info: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature

08CNE8N

Abstract: IPP08CNE8N JESD22 PG-TO220-3
Contextual Info: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature

SBR80

Abstract: SBR8035 SBR8040 SBR8045 SBR8050
Contextual Info: Schottky Rectifier SBR80 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode “ÎÔ41 A B C D E F G H J K M N P - .669 .422

Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 R e p la ce s B U K 54 5-1 00 A /B PHILIPS N -channel en han cem en t m ode logic level field-effect power transistor in a plastic full-pack envelope. T h e device is intended for use in

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

transistor f630

Abstract: f630 F630 TO 252 UF630
Contextual Info: CEDF630/CEUF630 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 200V , 9 A , R d s o n =400 itiQ @Vgs=10V. • Super high dense cell design for extremely low Rds(onj. • High power and current handling capability. • TO-251 &TO-252 package.

PJ6694

Abstract: SOIC-08
Contextual Info: PJ6694 25V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@12A=12mΩ • RDS(ON), VGS@4.5V,IDS@10A=22mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters

Contextual Info: SIEMENS BUZ 93 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 93 Vds 600 V 3.6 A ffDS on 2.5 n Package Ordering Code TO-220 AB C67078-S1343-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OVSJ-3 HIGH-SPEED SWITCHING USE FS1 OVSJ-3 I • 4V DRIVE • VDSS . 150V i • ros O N ( m a x ) . 160mn

SD 347 transistor

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 347 • N channel • Enhancement mode • Avalanche-rated Type BUZ 347 50V A ^DS on) Package 1) O rdering Code 45A 0.03 Q TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, Tc = 28 "C