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Infineon Technologies AG


Infineon Technologies AG IPP08CNE8NG Power Field-Effect Transistor, 95A I(D), 85V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IPP08CNE8NG		925		1	1 - 10 - 100 $1.12 1000 $0.93 10000 $0.83	Buy Now
Vyrian	IPP08CNE8NG		9,697			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPB08CNE8NG Power Field-Effect Transistor, 95A I(D), 85V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPB08CNE8NG		4,325			1 - 10 - 100 - 1000 - 10000 -	Get Quote

08CNE8N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 8.2 m: ID 95 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ipb08cne8n ipi08cne8n ipp08cne8n pg-to263-3 +208cne8n pg-to262-3	PDF
08CNE8N Contextual Info: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ipb08cne8n ipi08cne8n ipp08cne8n pg-to263-3 +208cne8n pg-to262-3	PDF
08CNE8N Abstract: IPP08CNE8N JESD22 PG-TO220-3 Contextual Info: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ipb08cne8n ipi08cne8n ipp08cne8n pg-to263-3 +4pg-to262-3 pg-to220-3 08cne8n jesd22	PDF
08CNE8N Abstract: IPP08CNE8N JESD22 PG-TO220-3 D475A C3175 Contextual Info: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ipb08cne8n ipi08cne8n ipp08cne8n pg-to263-3 +6pg-to262-3 pg-to220-3 08cne8n jesd22 d475a c3175	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
IEC61249-2-21 Abstract: IPP08CNE8N JESD22 PG-TO220-3 diode R 107 Contextual Info: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ipb08cne8n ipi08cne8n ipp08cne8n iec61249-2-21 +5pg-to263-3 pg-to262-3 pg-to220-3 jesd22 diode r 107	PDF