GS 431 TRANSISTOR Search Results

MGF4919

Abstract: mgf4918 mgf4914 MGF4910 gs 431 transistor
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series _ SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 9 1 0 E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to

marking sSH sot-23

Abstract: MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens
Contextual Info: SIEMENS BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 6 - 2 -6 v Pin 1 Pin 2 Pin 3 "g Type BSS 119 VDS 100 V Type BSS 119 O rdering Code Q67000-S007 0.17 A ^DS(on) Package Marking 6n SOT-23 sSH Tape and Reel Information

Contextual Info: mu t i CEP4060A/CEB4060A March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , RDS ON =85m Q @ V gs=10V. • Super high dense cell design for extremely low R ds (on). • High power and current handling capability. • TO-220 & TO-263 package.

Contextual Info: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V b 8.5 A ^DS on Package Ordering Code 0.8 Í2 TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type ^DS ¡0 11DS on BUZ 78 800 V 1.5 A 9.0 £2 Maxim um Ratings Parameter Continuous drain current, Tc = 25 'C Pulsed drain current, Tc = 25 °C Avalanche current, limited by Timax

BUZ91

Abstract: transistor buz91 C67078-S1342-A2 235bQ5 gs d050 transistor 91 330
Contextual Info: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V h ^DS on Package Ordering Code 8.5 A 0.8 £2 TO-220 AB C67078-S1342-A2 M axim um Ratings Parameter Symbol Continuous drain current

sd 431 transistor

Abstract: transistor buz 210
Contextual Info: SIEMENS BUZ 71 AL N o t fo r n e w rip a ig n SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type BUZ 71 AL Vbs 50 V 13 A flbs on 0.12 ß Package Ordering Code TO-220 AB C67078-S1326-A3 Maximum Ratings Parameter

IRF 3302

Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
Contextual Info: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited

h a 431 transistor

Abstract: BUZ349 transistor buv y 431 transistor
Contextual Info: ObE D N AMER P H I L I P S / D I S C R E T E PowerMOS transistor 1^ 53^31 0014745 t BUZ3491 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

SmD TRANSISTOR a77

Abstract: smd marking code SSs
Contextual Info: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138

15n50

Abstract: sth15n50f1 7n30
Contextual Info: SCS-THOMSON STH15N50 STH15N50FI !ILJ gTO«§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH15N50 S TH 15N50FI ¡ V dss R ds(oh 500 V 500 V 0.4 Ü 0.4 £2 i Id | 15 A 9.3 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

transistor w 431

Abstract: tL 431 transistor BSN204 transistor tl 431 BSN204A
Contextual Info: Philips Components BSN204/BSN204A Data «heat status Product specification date of issus December 1990 FEATURES N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

IPW50R045CP

Abstract: JESD22
Contextual Info: IPW50R045CP CoolMOSTM Power Transistor Product Summary Features • Worldwide best R DS,on in TO247 • Lowest figure of merit RON x Qg V DS @Tjmax 550 V R DS on ,max 0.045 Ω 150 nC Q g,typ • Ultra low gate charge • Extreme dv/dt rated PG-TO247 • High peak current capability

IPW60R045Cp 6R045

Abstract: 6r045 mosfet 6r045 IPW60R045CP sd 431 transistor JESD22 SP000067149 gs 431 transistor
Contextual Info: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

infineon 6r045

Abstract: mosfet 6r045 IPW60R045CS 6r045 infineon 6r045 PG-TO-247-3 Q67045A5061 JESD22 PG-TO247-3 IPW60R045
Contextual Info: IPW60R045CS CoolMOS TM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

mosfet 6r045

Abstract: IPW60R045Cp 6R045 230 AC to 5V dc smps sd 431 transistor infineon 6r045 IPW60R045CP SP000067149 6R045
Contextual Info: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

infineon 6r045

Abstract: mosfet 6r045 6r045 infineon ipw60r045cp IPW60R045Cp 6R045
Contextual Info: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

mosfet 6r045

Abstract: infineon 6r045 transistor 6R045 6R045 marking PG-TO-247-3 gs 431 transistor 230 AC to 5V dc smps IPW60R045Cp 6R045
Contextual Info: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

IPW60R045Cp 6R045

Abstract: mosfet 6r045 6R045 IPW60R045CP JESD22 SP000067149 sd 431 transistor gs 431 transistor infineon 6r045
Contextual Info: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

mosfet 6r045

Abstract: IPW60R045Cp 6R045 6r045 IPW60R045CP sd 431 transistor transistor 6R045 gs 431 transistor SP000067149 infineon 6r045 CoolMOS Power Transistor
Contextual Info: IPW60R045CP CoolMOS Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: N-Channel Enhancement Mode MOSFET Product Description Features The GSM1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior

XC+872

Contextual Info: SPD 10N10 Inf i ne on technologies Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS 100 V • Enhancement mode Drain-Source on-state resistance ñ DS on1 0.2 Q. • Avalanche rated Continuous drain current

Contextual Info: P-Channel Enhancement Mode MOSFET Product Description Features The GSM1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior

SGS150MA010D1

Contextual Info: f Z 7 SGS-THOMSON ^7# RilD g»[l[Lll(gT»R(10(gi SGS150MA010D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSs SGS150MA010D1 100 V • • • • • RDS(on 0.009 n 150 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE