LANE11 Search Results
LANE11 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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sem 2106
Abstract: SR5690 Northbridge Southbridge PCIe Bridge RD890 5650 ati ACC MICRO 2178 Index
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sr5690/5670/5650sem 2106sr5690northbridge+6 | |
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Contextual Info: 600mA LDO Regulator Product Description Features The GS2905V is a 600mA fixed and adjustable output voltage, low dropout linear regulator with high ripple rejection ratio and fast turn-on time. It includes a reference voltage source, an error amplifier, driver transistors and an |
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600mags2905v110mv300ma+1 | |
GS2576MContextual Info: 52kHz 3A Step-Down Voltage Regulator Product Description Features The GS2576 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down switching regulator, capable of driving 3A load with excellent line and |
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52khzgs2576lane11gs2576m | |
GS324SF
Abstract: GS324
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gs324lane11gs324sf | |
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Contextual Info: Ultra Low Capacitance 4-Line ESD Protection Array Product Description Features The GSE6V8UF is 4-channel very low capacitance ESD transient voltage suppressor which provides a very high level of protection for sensitive electronic components that may be subjected to |
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ot-23-6llane11 | |
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Contextual Info: 500mA LDO Regulator JAN. 2010 Product Description Features The GS2905 is a 500mA fixed output voltage, low dropout linear regulator with high ripple rejection ratio and fast turn-on time. It includes a reference voltage source, an error |
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500mags2905lane11 | |
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Contextual Info: 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone |
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gsm3414sot-23-3llane11 | |
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Contextual Info: N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002K is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, |
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gsm7002k640ma950malane11 | |
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Contextual Info: N-Channel Enhancement Mode MOSFET Product Description Features The GSM4972 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to |
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gsm4972lane11 | |
gsm8205Contextual Info: 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8205, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone |
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gsm8205lane11 | |
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Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone |
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gsm2301as-20v/-2ot-23lane11 | |
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Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power |
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gsm41340v/12a0v/10agsm4134sf+1 | |
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Contextual Info: N-Channel Enhancement Mode MOSFET Product Description Features GSM9108, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line |
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gsm9108ot-23-3lgsm9108zflane11 | |
gsm39Contextual Info: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3993, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power |
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gsm3993-30v/-3lane11gsm39 | |
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Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are |
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gsm4214gsm4214sflane11 | |
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Contextual Info: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6801, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone |
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gsm6801-30v/-3-30v/-2-30v/-1+1 | |
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Contextual Info: Dual Input 5A Ultra Low Dropout Voltage Regulator Product Description Features The GS2251 LDO is Dual Input Ultra Low Dropout linear voltage regulators that provide low voltage VREF = 0.8V , and high-current output (5A). |
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gs2251450mv600ualane11 | |
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Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power |
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gsm3406sot-23-3lgsm3406szflane11 | |
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Contextual Info: Ultra Low Capacitance Single-Line ESD Protection Array Product Description Features The GSE9X5VU is an ESD transient voltage suppression component which provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic |
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iec61000-4-2milstd-883lane11 | |
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Contextual Info: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9107, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power |
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gsm9107-30v/-4-30v/-3-30v/-1+4 | |
GS78L05N
Abstract: gs78l05s gs78l05 Positive Voltage Regulator with SOT89-5 Z1 POSITIVE VOLTAGE REGULATORS 14V 5A GS78L08 GS78L
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gs78lxx100mags78xxgs79lxx+8 | |
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Contextual Info: 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and |
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gsm1024ot-563lane11 | |
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Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone |
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gsm3413-20v/-3-20v/-2-20v/-1+2 | |
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Contextual Info: P-Channel Enhancement Mode MOSFET Product Description Features The GSM9109 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to |
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gsm9109-40v/-3-40v/-2lane11 | |