Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GSM1012 Search Results

    SF Impression Pixel

    GSM1012 Price and Stock

    igus Inc

    igus Inc GSM-1012-10

    IGLIDUR PLAIN BUSHES BORE 10MM L10MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS GSM-1012-10 Package 1
    • 1 $11.31
    • 10 $10.74
    • 100 $9.61
    • 1000 $9.61
    • 10000 $9.61
    		Get Quote
    TME GSM-1012-10 43 1
    • 1 $0.71
    • 10 $0.56
    • 100 $0.53
    • 1000 $0.53
    • 10000 $0.53
    		Buy Now

    igus Inc GSM-1012-08

    IGLIDUR PLAIN BUSHES BORE 10MM L8MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS GSM-1012-08 Package 1
    • 1 $12.75
    • 10 $12.11
    • 100 $10.83
    • 1000 $10.83
    • 10000 $10.83
    		Get Quote

    igus Inc GSM-1012-20

    Bearing: sleeve bearing; Øout: 12mm; Øint: 10mm; L: 20mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-20 28 1
    • 1 $1.67
    • 10 $1.34
    • 100 $1.25
    • 1000 $1.25
    • 10000 $1.25
    		Buy Now

    igus Inc GSM-1012-12

    Bearing: sleeve bearing; Øout: 12mm; Øint: 10mm; L: 12mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-12 28 1
    • 1 $1.33
    • 10 $1.06
    • 100 $0.99
    • 1000 $0.99
    • 10000 $0.99
    		Buy Now

    igus Inc GSM-1012-15

    Bearing: sleeve bearing; Øout: 12mm; Øint: 10mm; L: 15mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-15 26 1
    • 1 $3.02
    • 10 $2.42
    • 100 $2.27
    • 1000 $2.27
    • 10000 $2.27
    		Buy Now
    Find more GSM1012 price and stock on Findchips.com

    GSM1012 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: N-Channel Enhancement Mode MOSFET Product Description Features The GSM1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior


    Original     		GSM1012 Lane11 PDF

    Contextual Info: 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and


    Original     		GSM1012E, OT-523 Lane11 PDF