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    GSM1012 Search Results

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    GSM1012 Price and Stock

    igus Inc

    igus Inc GSM-1012-10

    IGLIDUR PLAIN BUSHES BORE 10MM L10MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS GSM-1012-10 Package 1
    • 1 $0.90
    • 10 $0.90
    • 100 $0.81
    • 1000 $0.76
    • 10000 $0.76
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    TME GSM-1012-10 290 1
    • 1 $0.72
    • 10 $0.58
    • 100 $0.54
    • 1000 $0.54
    • 10000 $0.54
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    igus Inc GSM-1012-08

    IGLIDUR PLAIN BUSHES BORE 10MM L8MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS GSM-1012-08 Package 1
    • 1 $0.78
    • 10 $0.78
    • 100 $0.70
    • 1000 $0.66
    • 10000 $0.66
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    igus Inc GSM-1012-20

    Bearing: sleeve bearing; Øout: 12mm; Øint: 10mm; L: 20mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-20 103 1
    • 1 $1.71
    • 10 $1.37
    • 100 $1.28
    • 1000 $1.28
    • 10000 $1.28
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    igus Inc GSM-1012-12

    Bearing: sleeve bearing; Øout: 12mm; Øint: 10mm; L: 12mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-12 28 1
    • 1 $1.36
    • 10 $1.09
    • 100 $1.02
    • 1000 $1.02
    • 10000 $1.02
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    igus Inc GSM-1012-14

    Bearing: sleeve bearing; Øout: 12mm; Øint: 10mm; L: 14mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-14 18 1
    • 1 $3.10
    • 10 $2.48
    • 100 $2.32
    • 1000 $2.32
    • 10000 $2.32
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    Find more GSM1012 price and stock on Findchips.com

    GSM1012 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: N-Channel Enhancement Mode MOSFET Product Description Features The GSM1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior


    Original     		GSM1012 Lane11 PDF

    Contextual Info: 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and


    Original     		GSM1012E, OT-523 Lane11 PDF