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    GSM1012 Price and Stock

    igus Inc

    igus Inc GSM-1012-10

    Bearing: slide; sleeve; Øout: 12mm; Øint: 10mm; L: 10mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-10 107 1
    • 1 $0.68
    • 10 $0.54
    • 100 $0.51
    • 1000 $0.51
    • 10000 $0.51
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    RS GSM-1012-10 Package 1
    • 1 $11.57
    • 10 $11.00
    • 100 $9.84
    • 1000 $9.84
    • 10000 $9.84
    		Get Quote

    igus Inc GSM-1012-20

    Bearing: slide; sleeve; Øout: 12mm; Øint: 10mm; L: 20mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-20 84 1
    • 1 $1.60
    • 10 $1.28
    • 100 $1.20
    • 1000 $1.20
    • 10000 $1.20
    		Buy Now

    igus Inc GSM-1012-15

    Bearing: slide; sleeve; Øout: 12mm; Øint: 10mm; L: 15mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-15 22 1
    • 1 $2.90
    • 10 $2.32
    • 100 $2.17
    • 1000 $2.17
    • 10000 $2.17
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    igus Inc GSM-1012-14

    Bearing: slide; sleeve; Øout: 12mm; Øint: 10mm; L: 14mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-14 20 1
    • 1 $2.90
    • 10 $2.32
    • 100 $2.17
    • 1000 $2.17
    • 10000 $2.17
    		Buy Now

    igus Inc GSM-1012-12

    Bearing: slide; sleeve; Øout: 12mm; Øint: 10mm; L: 12mm; iglidur® G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GSM-1012-12 13 1
    • 1 $1.27
    • 10 $1.02
    • 100 $0.95
    • 1000 $0.95
    • 10000 $0.95
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    Find more GSM1012 price and stock on Findchips.com

    GSM1012 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: N-Channel Enhancement Mode MOSFET Product Description Features The GSM1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior


    Original     		gsm1012lane11 PDF

    Contextual Info: 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and


    Original     		gsm1012eot-523lane11 PDF