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    GP14N60 Search Results

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    GP14N60 Price and Stock

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    Rochester Electronics LLC MGP14N60E

    IGBT, 18A, 600V, N-CHANNEL
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    DigiKey MGP14N60E Bulk 486
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    STMicroelectronics STGP14N60D

    IGBT 600V 25A TO-220
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    DigiKey STGP14N60D Tube 1,000
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    Vyrian STGP14N60D 2,396
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    onsemi MGP14N60E

    Insulated Gate Bipolar Transistor, 18A, 600V, N-Channel, TO-220AB
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    Rochester Electronics MGP14N60E 5,908 1
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    GP14N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ES600

    Abstract: P14N60
    Contextual Info: MOTOROLA O rder this docum ent by M G P14N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP14N60E In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


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    P14N60E/D ES600 P14N60 PDF

    GP14N60E

    Abstract: GP14N60
    Contextual Info: M OTOROLA Order this document by GP14N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet GP14N60E Insulated G ate Bipolar TVansistor N-Channel Enhancement Mode Silicon Gate IGBT IN TO-220 14 A @ 90°C 18 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED


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    MGP14N60E/D 44stered X34713-0 2110B GP14N60E GP14N60 PDF

    GP14N60

    Abstract: STGP14N60D GF14N60D C9533 GP14N60D STGF14N60D
    Contextual Info: STGF14N60D GP14N60D 14 A - 600 V - short circuit rugged IGBT Preliminary Data Features • Low on-voltage drop VCE(sat ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution


    Original
    STGF14N60D STGP14N60D O-220FP O-220 GP14N60 STGP14N60D GF14N60D C9533 GP14N60D STGF14N60D PDF

    GP14N60

    Contextual Info: STGF14N60D GP14N60D 14 A - 600 V - short circuit rugged IGBT Preliminary Data Features • Low on-voltage drop VCE(sat ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution


    Original
    STGF14N60D STGP14N60D O-220FP O-220 GP14N60 PDF