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STMicroelectronics


STMicroelectronics STGP14N60D Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	STGP14N60D		6,396			1 - 10 - 100 - 1000 - 10000 -	Get Quote

GP14N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ES600 Abstract: P14N60 Contextual Info: MOTOROLA O rder this docum ent by M G P14N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP14N60E In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced	OCR Scan	p14n60e/d es600 p14n60	PDF
GP14N60E Abstract: GP14N60 Contextual Info: M OTOROLA Order this document by GP14N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet GP14N60E Insulated G ate Bipolar TVansistor N-Channel Enhancement Mode Silicon Gate IGBT IN TO-220 14 A @ 90°C 18 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED	OCR Scan	mgp14n60e/d 44stered x34713-0 2110b +2gp14n60e gp14n60	PDF
GP14N60 Abstract: STGP14N60D GF14N60D C9533 GP14N60D STGF14N60D Contextual Info: STGF14N60D GP14N60D 14 A - 600 V - short circuit rugged IGBT Preliminary Data Features • Low on-voltage drop VCE(sat ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution	Original	stgf14n60d stgp14n60d o-220fp o-220 +4gp14n60 gf14n60d c9533 gp14n60d	PDF
GP14N60 Contextual Info: STGF14N60D GP14N60D 14 A - 600 V - short circuit rugged IGBT Preliminary Data Features • Low on-voltage drop VCE(sat ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution	Original	stgf14n60d stgp14n60d o-220fp o-220 +1gp14n60	PDF