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    STMicroelectronics

    STMicroelectronics STGP14N60D

    Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel
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    Vyrian STGP14N60D 6,396
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    GP14N60D Datasheets Context Search

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    GP14N60

    Abstract: STGP14N60D GF14N60D C9533 GP14N60D STGF14N60D
    Contextual Info: STGF14N60D GP14N60D 14 A - 600 V - short circuit rugged IGBT Preliminary Data Features • Low on-voltage drop VCE(sat ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution


    Original     		stgf14n60dstgp14n60do-220fpo-220+4gp14n60gf14n60dc9533gp14n60d PDF

    GP14N60

    Contextual Info: STGF14N60D GP14N60D 14 A - 600 V - short circuit rugged IGBT Preliminary Data Features • Low on-voltage drop VCE(sat ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution


    Original     		stgf14n60dstgp14n60do-220fpo-220+1gp14n60 PDF