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    ES600

    Abstract: P14N60
    Contextual Info: MOTOROLA O rder this docum ent by M G P14N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP14N60E In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		p14n60e/des600p14n60 PDF

    GP14N60E

    Abstract: GP14N60
    Contextual Info: M OTOROLA Order this document by GP14N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet GP14N60E Insulated G ate Bipolar TVansistor N-Channel Enhancement Mode Silicon Gate IGBT IN TO-220 14 A @ 90°C 18 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED


    OCR Scan     		mgp14n60e/d44steredx34713-02110b+2gp14n60egp14n60 PDF