GP12 Search Results

Contextual Info: GP1200FSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V CE sat , 3.5V APPLICATIONS • High Pow er Sw itching. ■ M otor C ontrol. ■

GP1200

Abstract: gctl
Contextual Info: GP1200 2.4 GHz Power Amplifier Preliminary Datasheet Product Description GP1200 is a high performance power amplifier designed for Bluetooth in the 2.4 GHz band. It is based on InGaP HBT technology and is available in a compact 6 lead LPCC plastic package. With 29dB gain and 23dBm P-1dB, the

Contextual Info: Sealed* Ultra-Miniature Surface Mount Pushbutton Switches GP Series 'Process sealed-withstands soldering and cleaning processes. SP MODEL WITH SC SURFACE MOUNT TERMINALS .078 1,98 S W ITC H FU N C TIO N P O S .1 PA R T NO . GP12MSCKE Conn. Terms. Schematic

ether H5

Abstract: futaba vfd 9 GP1219A01A Futaba VFD display futaba vfd circuit diagram 256X64 Futaba VFD futaba 4 digit Futaba protocol futaba display 126
Contextual Info: TENTATIVE VACUUM FLUORESCENT DISPLAY MODULE ENGINEERING PROPOSAL GP1219A01A EVALUATION □ ACCEPTED WITHOUT ANY CHANGE □ THE FOLLOWING CHANGE IS REQUIRED April 1 , 2008 Engineering Group Electronic Components Division ISSUED Yasuo Ohno BY CHECKED BY CHECKED

JEP95

Abstract: SST12LP14C SST12LP14C-QVCE SST12LP14C-QVCE-K PAE1
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C Data Sheet SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:

JEP95

Abstract: SST12LP15 SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Data Sheet SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:

Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Data Sheet SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:

Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Data Sheet SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:

SST12LP15

Abstract: rf power amplifier transistor with s-parameters SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Preliminary Specifications SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:

JEP95

Abstract: SST12LP14A SST12LP14A-QVCE SST12LP14A-QVCE-K
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:

ZRS1056

Contextual Info: Data Sheet Model No.: GP120AFK Type : Rechargeable Nickel Cadmium Cylindrical Cell Fast Charge Charge control required Voltage (V) 1.7 Nominal Dimension (with Sleeve) : Φ =17.0mm H =43.0mm 1.6 Applications : Recommended discharge current 120 to 3600mA 1.5

Contextual Info: JULY 1996 GP1200FSS16S ADVANCE ENGINEERING DATA DS4336-4.2 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 1200A IC(CONT) 2400A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control.

Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:

94v0 schematic

Abstract: GP11MSAKE GP11MSA1KE GP11MSV1KE GP12MSAKE MODEL SA GP12MSC1KE
Contextual Info: GP Series Sealed* Ultra-Miniature Surface Mount Pushbutton Switches *Process sealed–withstands soldering and cleaning processes. GP11MSAKE • C • • GP12MSC1KE Process compatible—withstands IR and vapor phase reflow soldering and cleaning processes

Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:

Contextual Info: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet SST-GP1215A2.4 GHz High Gain High Power PA FEATURES: • • • • • High Gain: – Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:

Contextual Info: Si GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4336-5.8 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. 'cco nt 1200A

SST12LP15A

Abstract: JEP95 SST12LP15A-QVCE SST12LP15A-QVCE-K
Contextual Info: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet SST-GP1215A2.4 GHz High Gain High Power PA FEATURES: • • • • • High Gain: – Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:

Contextual Info: JULY 1996 GP1200FSS12S ADVANCE ENGINEERING DATA DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1200A IC(CONT) 2400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.

SST12LP15

Abstract: SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Preliminary Specifications SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:

gp731

Abstract: GP1212
Contextual Info: Case Style GP Outline Dimensions GP731 GP1212 PCB Land Pattern Suggested Layout, Tolerance to be within ±.002 CASE # GP731 GP1212 A B .350 8.89 .350 (8.89) C .100 (2.54) .150 (3.81) D E F G H J K L M .175 (4.45) .075 (1.93) .100 (2.54) .110 (2.79) .040

JEP95

Abstract: SST12LP14A SST12LP14A-QVCE SST12LP14A-QVCE-K
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Data Sheet SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:

AN4502

Abstract: AN4503 GP1200ESM33 DS5308-1
Contextual Info: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001

Contextual Info: GP1600FSS12-ABC GP1600FSS12-ABC Powerline N-Channel IGBT Module Advance Information DS5173-1.2 May 1999 The GP1200FSS12-ABC is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power