GMM794000BS60
Abstract: GMM794000BS70 GMM794000
Contextual Info: GMM794000BS-60/70/80 LG Semicon Co.,Ltd. Description Features The GM M 794000BS is a 4M x 9 bits Dynamic RAM Module which is assembled 9 pieces of 4M bit DRAM GM71C4100BJ, 4 M x l in 20/26 pin small out-line J-form on a 30 pin single in-line package. The
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gmm794000bs-60/70/80794000bsgm71c4100bjgmm794000bs+3gmm794000bs60gmm794000bs70gmm794000
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GM71C4100BI
Abstract: GMM794000 GM71C4100 iqm7
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM794000BS is a 4M x 9 bits Dynamic RAM Module which is assembled 9 pieces of 4M bit DRAM GM71C4100BJ, 4Mxl in 20/26 pin small out-line J-form on a 30 pin single in-line package. The GMM794000BS is a socket type memory
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gmm794000bsgm71c4100bjgmm794000bs-60gmm794000bs-70+8gmm794000bs-00d7b040007b050007b0lgm71c4100bigmm794000gm71c4100iqm7
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BS-80
Contextual Info: @ LG Semicon. Co. LTD._ Description Features The GMM784000BS is a 4M x 8 bits Dynamic RAM Module which is assembled 8 pieces of 4M bit DRAM GM71C4100BJ, 4Mxl in 20/26 pin small out-line J-form on a 30 pin single in-line package. The GMM784000BS is a socket type memory
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gmm784000bsgm71c4100bjgmm784000bs-60gmm784000bs-70+4gmm784000bs-80gmm78400obs402a757bs-80
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MAS 10 RCD
Abstract: M74000
Contextual Info: GMM784000BS-60/70/80 LG Semicon Co.,Ltd. Description The GMM784000BS is a 4M x 8 bits Dynamic RAM Module which is assembled 8 picces of 4M bit DRAM GM71C4100BJ, 4 M x l in 20/26 pin small out-line J-form on a 30 pin single in-line package. The G M M 784000BS is a socket type memory
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gmm784000bs-60/70/80gmm784000bsgm71c4100bj784000bs+3gmm784000bs-mas 10 rcdm74000
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GM71C18160AJ7
Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Contextual Info: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I
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gm71c1000b-60gm71c1oo0bj-601000bz-60+13100obl-6o1000blj-60gm71c1000blz-60gm71c18160aj7gm71c4260aj70gm71c4400bj60gm71c4400bj70gm71c4100cj60gm71c1000bj70gm76c256all-70gm76c256bllfw70gm71c4100bj70gm76c88alfw15
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GM76C88AL FW
Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Contextual Info: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20
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gm71c1000b/bj/bz-60gm71c1000b/bj/bz-70gm71c1q0b/bj/bz-80+15gm71c1000bl/blj/blz-60gm71c1ooobl/blj/blz-gm71c1000bl/bij/blz-80200ua512cydes/8ms18dipgm76c88al fw71c4260gm71ggm76c28agm23c32000lr-80clr-80hr80tlr8
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GM76C256all
Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Contextual Info: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60
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gm71c1000b/bj/bz-60gm71c10008/bj/bz-70gm71cgm71c10006ublj/blz-60+16gm71c10006ublj/blz-70gm71c10006ublj/blz-80351mxbgm23c8000a/af32dip32sopgm76c256all16m-dramlt-860gm23c400gm76c28agm23c810qa-12lr-80bfw12gm23c8001gm23c410
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GM71C4100BJ
Contextual Info: Rev. 0. GMM784000BS-60/70/80 GoldStar 4 .1 9 4 .3 0 4 W O R D S x 8 BIT GMM794000BS-60/70/80 GOLDSTAR ELECTRON CO., LTD. 4 .1 9 4 .3 0 4 W O R D S x 9 BIT CMOS DYNAMIC RAM MODULE Description Features T h e G M M 78 9|4000B S is 4M x 8(9 D y n a m ic RAM M O D U L E o rg a n iz e d a s 4 ,1 9 4 ,3 0 4 x 8 (9 ) b its a n d
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gmm784000bs-60/70/80gmm794000bs-60/70/804000bgmm784000bs/gmm794000bs+4gmm784000bs4g2a7570003fistgm71c4100bj
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gm71c4100
Abstract: 71C4100 GM7IC4100 GM71C4100B/BL
Contextual Info: GM71C4100B/BL LG Semicon Co.,Ltd. 4,194,304 W ORDS x 1BIT CMOS DYNAMIC RAM Description Features The GM 71C4100B/BL is the new generation dynamic RAM organized 4,194,304 x 1 bit. G M 71C 4 100B/BL has realized higher density, higher performance and various functions by utilizing
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gm71c4100b/bl71c4100b/bl100b/blgm71c41+6300mil20pin400milgm71c410071c4100gm7ic4100
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GM71C4400BJ70
Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Contextual Info: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80
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71c1000b-701ooobj-7071c1000bz-7071c1000b-80+161ooobj-8071c1000bz-8071c1000bl-801000bi000hgm71c1000b-60gm71c4400bj70gm71c4400blt70gm71c4100cj60gm76c256bll-70gm76c8128allfw70gm71c4100cj701gm7gm76c256bll70gmm7362000bsg-7076c256
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GM71C4100
Abstract: bl70 BLT70 BL-70 gm71c4100bj GM71C4104 bl80
Contextual Info: @ LG Semicon. Co. LTD._ Description Features The GM71C4100B/BL is the new generation dynamic RAM organized 4,194,304 x 1 bit. GM71C4100B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The
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gm71c4100b/bl300mil20pin400mil+7gm71c4100bl70blt70bl-70gm71c4100bjgm71c4104bl80
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