GI756 DIODE Search Results

Contextual Info: GI756 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage0.9 @I(FM) (A) (Test Condition)6.0 @Temp. (øC) (Test Condition)25’

gi754

Abstract: GI750 GI751 GI758 JESD22-B102 J-STD-002 P600 GI756
Contextual Info: GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 µA • High forward current capability • High forward surge capability • Solder dip 260 °C, 40 s

Contextual Info: GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 µA • High forward current capability • High forward surge capability • Solder Dip 260 °C, 40 seconds

GI756

Contextual Info: GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward current capability • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106

GI754

Abstract: GI756 88627
Contextual Info: GI750 thru GI758 Vishay Semiconductors High Current Axial Plastic Rectifier Major Ratings and Characteristics IF AV 6.0 A VRRM 50 V to 800 V IFSM 400 A VF 0.9 V, 0.95 V IR 5.0 µA Tj max. 150 °C Case Style P600 Features • • • • Low forward voltage drop

GI751

Abstract: GI750 GI758 J-STD-002 P600
Contextual Info: GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward current capability • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106

88627

Abstract: GI756
Contextual Info: GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier Major Ratings and Characteristics IF AV 6.0 A VRRM 50 V to 800 V IFSM 400 A VF 0.9 V, 0.95 V IR 5.0 µA Tj max. 150 °C Case Style P600 Features Mechanical Data • • •

GI756

Contextual Info: GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 µA • High forward current capability • High forward surge capability • Solder dip 260 °C, 40 s

gi756 diode

Abstract: gi758 diode GI750 GI751 GI752 GI754 GI758 JESD22-B102D J-STD-002B P600
Contextual Info: GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier Major Ratings and Characteristics IF AV 6.0 A VRRM 50 V to 800 V IFSM 400 A VF 0.9 V, 0.95 V IR 5.0 µA Tj max. 150 °C Case Style P600 Features Mechanical Data • • •

GI756

Contextual Info: GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 µA • High forward current capability • High forward surge capability • Solder Dip 260 °C, 40 seconds

gi756 diode

Abstract: GI752 GI750 GI751 GI758 JESD22-B102D J-STD-002B P600 GI756
Contextual Info: GI750 thru GI758 Vishay General Semiconductor High Current Axial Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 µA • High forward current capability • High forward surge capability • Solder dip 260 °C, 40 seconds

vishay 1N4007 DO-213AB

Abstract: 1N4007 DO-214BA vishay 1N4007 DO-214AC 1N4007 VISHAY 2004 625-1N4007 1N4004 DO-214AC vishay rectifiers 1n4002 s1b MURS160-2 DO-204AC
Contextual Info: Diodes & Rectifiers BACK NEXT VISHAY Rectifiers A C B DO-213AA DO-213AB D DO-204AL DO-41 DO-214AC DO-214BA E DO-214AA Vishay Semiconductors VISHAY STANDARD SILICON H G F DO-214AB P600 DO-201AD Vishay Part No. 0.5 Amp - Surface Mount 625-GL34A GL34A/32 625-GL34B

MDA2501

Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

mr852

Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
Contextual Info: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

MUR420 diode

Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
Contextual Info: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal

diode A14A surface mount

Abstract: SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode
Contextual Info: MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.