GG15 Search Results
GG15 Price and Stock
Samtec Inc CPAS-181-ZSGG-15DI- Bulk (Alt: CPAS-181-ZSGG-15DI) |
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CPAS-181-ZSGG-15DI | Bulk | 5 Weeks, 6 Days | 1 |
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Samtec Inc CPAS-160-ZWGG-15DG- Bulk (Alt: CPAS-160-ZWGG-15DG) |
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CPAS-160-ZWGG-15DG | Bulk | 7 Weeks, 2 Days | 1 |
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Samtec Inc CPAS-205-ZWGG-15BD- Bulk (Alt: CPAS-205-ZWGG-15BD) |
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CPAS-205-ZWGG-15BD | Bulk | 7 Weeks, 3 Days | 1 |
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Samtec Inc CPAS-149-ZSGG-15AQ- Bulk (Alt: CPAS-149-ZSGG-15AQ) |
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CPAS-149-ZSGG-15AQ | Bulk | 5 Weeks, 6 Days | 1 |
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Samtec Inc CPAS-149-ZSGG-15AX- Bulk (Alt: CPAS-149-ZSGG-15AX) |
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CPAS-149-ZSGG-15AX | Bulk | 5 Weeks, 6 Days | 1 |
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GG15 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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M54548L
Abstract: m54548 mitsubishi dc motor control 12P9 751 opamp h bridge motor driver FEATURES tt 2206 bidirectional speed control of dc motor
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m54548lm54548500mavcc-16v+6 | |
MB3756
Abstract: FT063 SIP-08P-M01
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374m2mb3756mb37s6t-58-11-13+3 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b7E J> • 7 ^ 4 1 4 5 GG151Q1 3b5 m S tlG K KMM584020B DRAM MODULES 4M x8 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020B is a 4M bitsx8 Dynamic RAM high density memory module. The Samsung KMM584020B |
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gg151q1kmm584020b20-pin30-pin+4 | |
Penetrox A Electric Joint Compound
Abstract: Penetrox E Electric Joint Compound u1011 Burndy Y35 hypress burndy YGIB Bus Bar torque for metric bolts UL467 YGHC29C29 PIBEAMKIT burndy Y750
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gp654cg1gp64526g1gp1526g1gp1726rt+10 | |
si9116
Abstract: SI9115DJ
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ae547359115/ssi9115si9116+2 | |
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Contextual Info: ¿ilimMtanS' SSI 32R2420 5V, 4-Channel 2-Terminal Read/Write Device A TDK Group/Company June 1994 DESCRIPTION FEATURES The SSI 32R2420 is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write |
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32r242020-lead32r2420riw-4cv32r2420iw-4cv+3 | |
viterbi algorithmContextual Info: ABRIDGED VERSION AI SSI 34P3500 w m PRML Read Channel with PR4, 8/9 ENDEC, FWR Servo s ifs k tn s A TDK G roup/Company Advance Information December 1995 DESCRIPTION FEATURES The SSI 34P3500 is a high performance BiCMOS read channel 1C that provides all of the functions needed to |
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34p3500573-60qq001503bviterbi algorithm | |
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Contextual Info: FAST CMOS 18-BIT REGISTER IDT54/74FCT16823AT/BT/CT/ET IDT54/74FCT162823AT/BT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Common features: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tsK o (Output Skew) < 250ps |
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18-bitidt54/74fct16823at/bt/ct/etidt54/74fct162823at/bt/ct/et250ps+6 | |
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Contextual Info: IDT54/74FCT543 IDT54/74FCT543A IDT54/74FCT543C FAST CMOS OCTAL LATCHED TRANSCEIVER Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • IDT54/74FCT543 equivalent to FAST speed The IDT54/74FCT543/A/C is a non-inverting octal trans ceiver built using an advanced dual metal CMOS technology. |
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idt54/74fct543idt54/74fct543aidt54/74fct543cidt54/74fct543/a/c+2 | |
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Contextual Info: Integrated Device Technology, Inc. BiCMOS StaticRAM 240K 16Kx15-BIT CACHE-TAG RAM For PowerPC and RISC Processors PRELIMINARY IDT71216 This high-speed M A T C H signal, with tADM times as fast as 10ns, provides the fastest possible enabling of secondary |
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16kx15-bitidt71216/12ns4a25771+2 | |
A02H2
Abstract: EZ23 LC321664AT LC321664AT-80 TSOP44 7w7b A021-46
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en4942lc321664at-80lc321664a65536-word+10 | |
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Contextual Info: DS2154 PRELIMINARY DALLAS SEMICONDUCTOR DS2154 Enhanced E1 Single Chip Transceiver PACKAGE OUTLINE FEATURES • Complete E1 CEPT PCM-30/ISDN-PRI transceiver functionality • Onboard long and short haul line interface for clock/ data recovery and waveshaping |
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ds2154pcm-30/isdn-pri32-bit128-bit+3 | |
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Contextual Info: CY7C451 CY7C453 m r cypress Functional Description Features • 512 x 9 CY7C451 and 2,048 x 9 (CY7C453) FIFO buffer memory • Expandable in width and depth • High-speed 70-MHz standalone; 50-MHz cascaded • Supports free-running 50% duly cycle clock inputs |
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cy7c451cy7c45370-mhz50-mhz+3 | |
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Contextual Info: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial) |
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300-milcy7c271a768-word7c271a+2 | |
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IDT71256
Abstract: IDT71256L IDT71256S P28-2
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idt71256sidt71256l25/30/35/45/55/70/85/100/120/150ns20/25/35/45ns+4 | |
JIS D 5403
Abstract: TMCX118100 sj 2038 appleton clamp 7665s scotchcast 92 7665-S-8 8462 "cross reference" TMCX8875 TMCX402400
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cci-2-125cci-2/0-125cci-266-125cci-2/0-200+11 | |
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Contextual Info: Panasonic Voltage Regulators AN78L00/AN78L00M Series 3-pin Positive Output Voltage Regulator 100mA Type • Overview AN78L00 Series The AN78L00 series is 3-pin fixed positive output type monolithic voltage regulators. A Stabilized fixed output voltage is obtained from an |
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an78l00/an78l00m100maan78l00an78l05+2 | |
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Contextual Info: Panasonic For Information Equipment MN83876A Liquid Crystal Display Panel Source Driver • Overview The M N 83876A converts digital display data from a per sonal com puter or engineering workstation into analog signal voltages for driving thin-film transistor color LCD panels. |
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mn83876a3876agg154410q15442+1 | |
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Contextual Info: 4 Ö 5 5 4 5 2 D O I S T SE International i“R RectifioI N T E R N A T I O N A L R E C T I F I E R OST I bâE HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Surface Mount IRLR014 Straight Lead (IRLU014) Available in Tape & Reel Logic-Level Gate Drive |
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irlr014irlu01448s5ts2001s1s7 | |
mitsubishi diode relay
Abstract: TC 2C PD 6V relay 251C M54539P
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m54539p700mab24r6s7dq1sq32+3 | |
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Contextual Info: 3bE D m 7 Ö 1 1 D 7 3 OOlSSlfc. □ B B R K U R65012 R O C K W E L L / D I G I T A L COMM R6500 M icrocom puter System R65012 One-Chip Microprocessor SECTION 1 INTRODUCTION SUMMARY FEATURES The Rockwell R65012 is a complete, high performance 8bit NMOS-3 microcomputer on a single chip and is com |
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r65012r6500192-byte | |
KMM5322000BVContextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7^4142 KMM5322000BV/BVG GG1S1SÔ 24S I SM6 K DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • I rac tcAC KM M5322000BV-6 60ns 15ns KM M5322000B V'7 |
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kmm5322000bv/bvgm5322000bv-6m5322000bkmm5322000bv+4 | |
PIC ir transmit rc5 remote
Abstract: SOIC-18 FOOTPRINT philips RC6 IR
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pic16fr71pic16fr710pic16fr711pic16fr72+7 | |
EN3511
Abstract: TRANSISTOR MARKING 1d7 A1785 C4645 LA 4645 2SA1785 2SC4645 d015t
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en3511a2sa1785/2sc46452sa17852sc4645+9 | |