GFG 34 Search Results

s11s

Abstract: marking GFG
Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

Contextual Info: ON Semiconductort 1 DRAIN JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 25 Vdc Reverse Gate–Source Voltage VGSR 25 Vdc ID 30 mAdc Forward Gate Current IG f 10 mAdc

s11s

Contextual Info: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor

mpf102

Abstract: MPF102 JFET
Contextual Info: ON Semiconductort JFET VHF Amplifier MPF102 N–Channel – Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS –25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25°C

MPF102

Abstract: MPF102 JFET
Contextual Info: ON Semiconductort JFET VHF Amplifier MPF102 N−Channel − Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Drain −Gate Voltage VDG 25 Vdc Gate −Source Voltage VGS −25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25°C

BF245B

Contextual Info: BF245A, BF245B JFET VHF/UHF Amplifiers N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Source Voltage VDS ±30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate −Source Voltage VGS 30 Vdc ID 100 mAdc IG f 10 mAdc 350

2n5555

Abstract: 2N5555-D
Contextual Info: ON Semiconductort 1 DRAIN JFET Switching 2N5555 3 GATE N–Channel — Depletion 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10

BF245

Abstract: BF244 JFET BF245 BF245 application note BF245A application notes BF245A BF244B BF244A bf245 equivalent bf245c equivalent
Contextual Info: ON Semiconductort BF245A BF245B JFET VHF/UHF Amplifiers N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Drain Current ID Forward Gate Current

MMBF5484

Abstract: MMBF5484LT1 MMBF5484LT1G NOR 000 001 170 007
Contextual Info: MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below

Contextual Info: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage

Diode Gfg 6f

Abstract: 2N5555 2N5555 equivalent
Contextual Info: MOTOROLA Order this document by 2N5555/D SEMICONDUCTOR TECHNICAL DATA JFET Switching N–Channel — Depletion 2N5555 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage

2N5484

Abstract: 2N5486 MOTOROLA 2N5486 equivalent 2N5486 2N5484 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current

MMBF4416LT1

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

Contextual Info: SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

737 gez on

Abstract: BFK 78 GFM 78 BDP 281 SMCJ30CA 2430 GET IC GFK GFP SMCJ33CA GFM 65 GFM 45
Contextual Info: IM IC O N D U C TQ R tm - SMCJ170 C A SMCJ5.0(C)A - SMCJ 170(C)A Features • Glass passivated junction. • 1500 W Peak Pulse Power capability on 10/1000 |^s waveform . • Excellent clam ping capability. • Low increm ental surge resistance. • Fast response tim e; typically less

Contextual Info: Ordering number :EN*6213A Monolithic Digital IC LB11817 ¡SAfÊYOj Three-Phase Full-Wave Linear Drive Preliminary Overview Package Dimensions The LB 11817 is a spindle motor driver for use in slimshaped FDDs that use 5 V power supply. unit: mm 3247-SSOP36

marking BFP

Contextual Info: LESHAN RADIO COMPANY, LTD. SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR FEATURES For surface mounted applications in order to optimize board space Low profile package Built-in strain relief STAND-OFF VOLTAGE - 5.0 TO 440 Volts Glass passivated junction Low inductance

bdv 648

Abstract: bgg marking code GGG 64 marking ghm SMCJ5.0A SMCJ10A SMCJ10CA SMCJ11A SMCJ11CA SMCJ170
Contextual Info: LESHAN RADIO COMPANY, LTD. SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR FEATURES For surface mounted applications in order to optimize board space Low profile package Built-in strain relief STAND-OFF VOLTAGE - 5.0 TO 440 Volts Glass passivated junction Low inductance

Contextual Info: SMCJ5.0A THRU SMCJ440CA SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Stand - Off Voltage - 5.0 to 440 Volts Peak Pulse Power - 1500 Watt FEATURES ● ● ● ● ● SMC DO-214AB Glass Passivated Die Construction Uni- and Bi-Directional Versions Available

marking BJG sot-23

Abstract: MMBF5484LT1 wire wound IR source MARKING YG SOT-23
Contextual Info: MOTOROLA Order this document by MMBF5484LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE M M B F 5 48 4L T 1 Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 Vdc v GS r 25 Vdc Forward Gate Current 'G(f) 10 mAdc

Contextual Info: SMCJ SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – SMCJ SERIES FEATURE — — — — — — — — — — — For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance.

GHM SMD

Abstract: SMCJ10 SMCJ10A SMCJ11 SMCJ11A SMCJ12 SMCJ12A SMCJ13 SMCJ13A SMCJ14
Contextual Info: SMCJ5.0 . . . 170 Data Sheet Description 5.0V to 170V SMD TRANSIENT VOLTAGE SUPPRESSORS TVS Device Load Uni-Polar Mechanical Dimensions 6.60/7.11 Package ‘‘SMC’’ 5.59/6.10 7.75/8.12 TVS Device .15/.30 .171 Load 1.91/2.41 .051/.152 Uni-Polar Features n 1500 WATT PEAK POWER PROTECTION

Contextual Info: January 1988 MM54HC133/MM74HC133 13-Input NAND Gate General Description Features This NAND gate utilizes advanced silicon-gate CMOS tech­ nology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS inte­ grated circuits. All gates have buffered outputs. All devices

SMCJ300A

Abstract: SMCJ24CA marking code Bgg marking GJK
Contextual Info: SMCJ Transient 9ROWDJH6XSSUHVVRUV Series MERITEK UL E223045 FEATURES For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Excellent clamping capability.