GF30F Search Results

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

DSAI 130A

Abstract: 2224 sr GFIJ ANI 1015
Contextual Info: User's Manual 32 R32C/142 Group and R32C/145 Group User's Manual: Hardware R32C/142 Group and R32C/145 Group User’s Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these materials, including products and product specifications, represents

BAYER* makrofol ID 320

Abstract: luvocom 1105 gf 14 CRASTIN CE 7931 siferrit MT-11010 FAL0605-H siferrit material etd 49 core FAL0625-W luvocom
Contextual Info: SIFERRITâ Materials SIFERRIT materials Based on IEC 60401, the data specified here are typical data for the material in question, which have been determined principally on the basis of toroids ring cores . The purpose of such characteristic material data is to provide the user with improved means for

PA 6/6 GF30 SIEMENS

Abstract: Siemens Ferrite B65541 ferrite ei core n27 TESLA mh 7400 CRASTIN SO 655 IEC 60205 Luvocom B64290-A38 etd59 siemens Siemens Ferrite B64290
Contextual Info: Contents Selector Guide Index of Part Numbers 5 11 26 SIFERRIT Materials 33 General – Definitions Application Notes Processing Notes 111 128 150 Packing Quality Considerations Standards and Specifications 165 174 177 RM Cores PM Cores EP Cores 181 274 290

PBT-GF30

Abstract: pbt-GF30-fr PBT GF30 plastic pbt gf30 PBT GF30% datasheet 94v-0 GF30F pbtgf30fr 168-9
Contextual Info: BM6015 ∅60 X 15L EMINEBEA.COM -10°C ~ +70°C (Operating) -40°C ~ +70°C (Storage) (non-condensing environment) ROTATION .98 (25 ±0.3) Static Pressure ������ >P -GF30-F BT .59 (15 ±0.5) 240 ��� 200 ��� 160 ��� 120 ���

GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

can3

Contextual Info: R32C/142 Group and R32C/145 Group Datasheet Datasheet R32C/142 Group and R32C/145 Group RENESAS MCU 1. R01DS0071EJ0110 Rev.1.10 Sep 09, 2011 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM

F6445

Abstract: r5f6445flfb
Contextual Info: R32C/142 Group and R32C/145 Group Datasheet Datasheet R32C/142 Group and R32C/145 Group RENESAS MCU 1. R01DS0071EJ0110 Rev.1.10 Sep 09, 2011 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM

siemens r10 core

Abstract: siemens ferrite n22 p14 CRASTIN CE 7931 Siemens Ferrite n27 RM Siemens Ferrite perminvar Siemens Ferrite n67 RM siemens siferrit al 400 siemens R10 K1 siferrit mt 500 b
Contextual Info: SIFERRIT Materials Based on IEC 60401, the data specified here are typical data for the material in question, which have been determined principally on the basis of ring cores. The purpose of such characteristic material data is to provide the user with improved means for

Contextual Info: BM6015 ∅60 X 15L EMINEBEA.COM 25°C 25°C ROTATION .98 (25 ±0.3) Static Pressure ������ >P -GF30-F BT .59 (15 ±0.5) 240 ��� 200 ��� 160 ��� 120 ��� 80 ��� 40 AIR AIR NAME PLATE .98 (25 ±0.3) Casing : Plastic (Black) 94V-0

GT30J124

Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。